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Hernandez JMG, Guerrero-Sanchez J, Rodriguez-Martinez JA, Takeuchi N. First-Principles Studies of the Electronic and Optical Properties of Two-Dimensional Arsenic-Phosphorus (2D As-P) Compounds. ACS OMEGA 2024; 9:35718-35729. [PMID: 39184510 PMCID: PMC11339837 DOI: 10.1021/acsomega.4c04108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 07/29/2024] [Accepted: 08/01/2024] [Indexed: 08/27/2024]
Abstract
In this work, we propose the construction of a two-dimensional system based on the stable phases previously reported for the 2D arsenic and phosphorus compounds, with hexagonal and orthorhombic symmetries. Therefore, we have modeled one hexagonal and three possible orthorhombic structures. To ensure the dynamical stability, we performed phonon spectra calculations for each system. We found that all phases are dynamically stable. To ensure the thermodynamic and mechanical stabilities, we have calculated cohesive energies and elastic constants. Our results show that the criteria for the stabilities are all fulfilled. For these stable structures, we computed the electronic and optical properties from first-principles studies based on density functional theory. The computation of electronic band gaps was performed by using the GW approximation to overcome the underestimation of the results obtained from standard DFT approaches. To study the optical properties, we have computed the dielectric function imaginary part within the BSE approach, which takes into account the excitonic effects and allows us to calculate the exciton binding energies of each system. The study was complemented by the computation of the absorption coefficient. From our calculations, it can be established that the 2D As-P systems are good candidates for several technological applications.
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Affiliation(s)
- Jose Mario Galicia Hernandez
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja California 22860, Mexico
| | - Jonathan Guerrero-Sanchez
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja California 22860, Mexico
| | | | - Noboru Takeuchi
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja California 22860, Mexico
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Zhu Y, Cao J, Liu S, Loh KP. Heteroepitaxial Growth of Black Phosphorus on Tin Monosulfide. NANO LETTERS 2024; 24:479-485. [PMID: 38147351 DOI: 10.1021/acs.nanolett.3c04372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Black phosphorus (Black P), a layered semiconductor with a layer-dependent bandgap and high carrier mobility, is a promising candidate for next-generation electronics and optoelectronics. However, the synthesis of large-area, layer-precise, single crystalline Black P films remains a challenge due to their high nucleation energy. Here, we report the molecular beam heteroepitaxy of single crystalline Black P films on a tin monosulfide (SnS) buffer layer grown on Au(100). The layer-by-layer growth mode enables the preparation of monolayer to trilayer films, with band gaps that reflect layer-dependent quantum confinement.
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Affiliation(s)
- Youhuan Zhu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Junjie Cao
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Shanshan Liu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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Mansouri Z, Al-Shami A, Sibari A, Lahbabi S, El Kenz A, Benyoussef A, El Fatimy A, Mounkachi O. A BC 2N/blue phosphorene heterostructure as an anode material for high-performance sodium-ion batteries: first principles insights. Phys Chem Chem Phys 2023; 25:3160-3174. [PMID: 36621946 DOI: 10.1039/d2cp04104a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
Blue phosphorene (Blu-Pn) is a new phosphorene allotrope capable of hosting a substantial amount of sodium (Na) atoms. However, it has been reported to exhibit low electrical conductivity, chemical sensitivity, and structural stability, thus limiting its utility as an anode material for Na-ion batteries (NIBs). In this work, we introduce BC2N as a protective layer for Blu-Pn. Based on van der Waals (vdW) corrected density functional theory (DFT), we conduct a comprehensive first-principles study to explore the main electrochemical properties of the BC2N/Blu-Pn vdW heterostructure. The BC2N/Blu-Pn system exhibits a small band-gap of 0.03 eV that fades away and indicates metallic behavior upon Na adsorption. Furthermore, the binding energy of Na incorporated into the inter-layer of the BC2N/Blu-Pn system is lower (-2.03 eV) compared with those of free-standing BC2N (-1.25 eV) and Blu-Pn monolayer (-1.52 eV). Therefore, the growth of Na dendrites can be avoided. Furthermore, the migration energy barrier for the BC2N/Blu-Pn system is about 0.11 eV, indicating fast Na diffusion and excellent rate performance. Moreover, the theoretical storage capacity is 763 mA h g-1. Finally, we show that the intercalation of Na in the BC2N/Blu-Pn system has the advantage of a small average voltage of approximately 0.24 V. Besides these properties, the proposed heterostructure is based on chemical elements that are widely available and technologically established and have low atomic mass, which are all advantages for Na-ion battery applications.
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Affiliation(s)
- Zouhir Mansouri
- Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Faculty of Science, Mohammed V University in Rabat, Rabat 1014, Morocco. .,MSDA, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.,Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco
| | - Ahmed Al-Shami
- Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Faculty of Science, Mohammed V University in Rabat, Rabat 1014, Morocco. .,MSDA, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.,Department of Physics, Faculty of Science, Sana'a University, Sana'a, Yemen
| | - Anass Sibari
- Supramolecular Nanomaterials Group (SNG), Mohammed VI Polytechnic University, Benguerir 43150, Morocco
| | - Salma Lahbabi
- MSDA, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.,Equipe Modélisation, Applications Mathématiques et Informatiques (EMAMI), Laboratoire de Recherche en Ingénierie, ENSEM, Hassan II University of Casablanca, Casablanca 20000, Morocco
| | - Abdallah El Kenz
- Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Faculty of Science, Mohammed V University in Rabat, Rabat 1014, Morocco.
| | - Abdelilah Benyoussef
- Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Faculty of Science, Mohammed V University in Rabat, Rabat 1014, Morocco.
| | - Abdelouahed El Fatimy
- Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco
| | - Omar Mounkachi
- Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Faculty of Science, Mohammed V University in Rabat, Rabat 1014, Morocco. .,MSDA, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.,Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco
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