Ultrafast carrier dynamics in a monolayer MoS2at carrier densities well above Mott density

Ultrafast Dynamics Across Pressure-Induced Electronic State Transitions, Fluorescence Quenching, and Bandgap Evolution in CsPbBr3 Quantum Dots

This work investigates the impact of pressure on the structural, optical properties, and electronic structure of CsPbBr3 quantum dots (QDs) using steady-state photoluminescence, steady-state absorption, and femtosecond transient absorption spectroscopy, reaching a maximum pressure of 3.38 GPa. The experimental results indicate that CsPbBr3 QDs undergo electronic state (ES) transitions from ES-I to ES-II and ES-II to ES-III at 0.38 and 1.08 GPa, respectively. Intriguingly, a mixed state of ES-II and ES-III is observed within the pressure range of 1.08-1.68 GPa. The pressure-induced fluorescence quenching in ES-II is attributed to enhanced defect trapping and reduced radiative recombination. Above 1.68 GPa, fluorescence vanishes entirely, attributed to the complete phase transformation from ES-II to ES-III in which radiative recombination becomes non-existent. Notably, owing to stronger quantum confinement effects, CsPbBr3 QDs exhibit an impressive bandgap tuning range of 0.497 eV from 0 to 2.08 GPa, outperforming nanocrystals by 1.4 times and bulk counterparts by 11.3 times. Furthermore, this work analyzes various carrier dynamics processes in the pressure-induced bandgap evolution and electron state transitions, and systematically studies the microphysical mechanisms of optical properties in CsPbBr3 QDs under pressure, offering insights for optimizing optical properties and designing novel materials.

Ultrafast dynamics under high-pressure

High-pressure is a mechanical method to regulate the structure and internal interaction of materials. Therefore, observation of properties' change can be realized in a relatively pure environment. Furthermore, high-pressure affects the delocalization of wavefunction among materials' atoms and thus their dynamics process. Dynamics results are essential data for understanding the physical and chemical characteristics, which is valuable for materials application and development. Ultrafast spectroscopy is a powerful tool to investigate dynamics process and becoming a necessary characterization method for materials investigation. The combination of high-pressure with ultrafast spectroscopy in the nanocosecond∼femtosecond scale enables us to investigate the influence of the enhanced interaction between particles on the physical and chemical properties of materials, such as energy transfer, charge transfer, Auger recombination, etc. Base on this point of view, this review summarizes recent progress in the ultrafast dynamics under high-pressure for various materials, in which new phenomena and new mechanisms are observed. In this review, we describe in detail the principles ofin situhigh pressure ultrafast dynamics probing technology and its field of application. On this basis, the progress of the study of dynamic processes under high-pressure in different material systems is summarized. An outlook onin situhigh-pressure ultrafast dynamics research is also provided.

Electron-phonon interaction and ultrafast photoemission from doped monolayer MoS2

We have examined the effect of electron-phonon coupling on photoluminescence and ultrafast response of electron doped monolayer MoS₂, using a combination of density functional theory, time dependent density functional theory, and many-body theory. For small doping (∼1-3%) of interest here, the electron-phonon coupling parameter is modest (∼0.1-0.2) but its effect on the emissive properties and response of the system to femtosecond (fs) laser pulses is striking. We find an ultrafast (fs) relaxation of the electronic subsystem as well as a high fluence of visible light emission induced by electron phonon interaction. Together with high carrier mobility, these features of monolayer MoS₂ may be relevant for optoelectronic technologies.