Anisotropic large diamagnetism in Dirac semimetals ZrTe5and HfTe5

Nonreciprocal Goos-Hänchen shift in a Dirac semimetal based asymmetric photonic crystal structure

The generation and control of the Goos-Hänchen (GH) shift is a vital step toward its realistic applications, but investigations have mainly been limited to the directional-dependent ones; i.e., the GH shift is reciprocal for two opposite propagating directions. Here, by designing the asymmetrical multilayered structure with three-dimensional bulky Dirac semimetal (BDS) films, we theoretically confirm the footprint of the pronounced directional-dependent GH shift, and that it can be switched by the Fermi energy of the BDS. In addition to this electric field induced switching, the period numbers of the unit cells in the asymmetrical structure can also modulate the directional-dependent GH shift. The asymmetrical feature of the multilayered structure dominantly causes the emergence of the directional-dependent GH shift. Our discovery related to the directional-dependent GH shift constitutes an important ingredient for directional-dependent optophotonic devices such as directional sensors, optical switches, and detectors.

Signatures of a magnetic-field-induced Lifshitz transition in the ultra-quantum limit of the topological semimetal ZrTe5

The quantum limit (QL) of an electron liquid, realised at strong magnetic fields, has long been proposed to host a wealth of strongly correlated states of matter. Electronic states in the QL are, for example, quasi-one dimensional (1D), which implies perfectly nested Fermi surfaces prone to instabilities. Whereas the QL typically requires unreachably strong magnetic fields, the topological semimetal ZrTe5 has been shown to reach the QL at fields of only a few Tesla. Here, we characterize the QL of ZrTe5 at fields up to 64 T by a combination of electrical-transport and ultrasound measurements. We find that the Zeeman effect in ZrTe5 enables an efficient tuning of the 1D Landau band structure with magnetic field. This results in a Lifshitz transition to a 1D Weyl regime in which perfect charge neutrality can be achieved. Since no instability-driven phase transitions destabilise the 1D electron liquid for the investigated field strengths and temperatures, our analysis establishes ZrTe5 as a thoroughly understood platform for potentially inducing more exotic interaction-driven phases at lower temperatures.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.