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Hong R, He P, Zhang S, Hong X, Tian Q, Liu C, Bu T, Su W, Li G, Flandre D, Liu X, Lv Y, Liao L, Zou X. Compositional Engineering of Cu-Doped SnO Film for Complementary Metal Oxide Semiconductor Technology. NANO LETTERS 2024; 24:1176-1183. [PMID: 38240634 DOI: 10.1021/acs.nanolett.3c03953] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Metal oxide semiconductor (MOS)-based complementary thin-film transistor (TFT) circuits have broad application prospects in large-scale flexible electronics. To simplify circuit design and increase integration density, basic complementary circuits require both p- and n-channel transistors based on an individual semiconductor. However, until now, no MOSs that can simultaneously show p- and n-type conduction behavior have been reported. Herein, we demonstrate for the first time that Cu-doped SnO (Cu:SnO) with HfO2 capping can be employed for high-performance p- and n-channel TFTs. The interstitial Cu+ can induce an n-doping effect while restraining electron-electron scatterings by removing conduction band minimum degeneracy. As a result, the Cu3 atom %:SnO TFTs exhibit a record high electron mobility of 43.8 cm2 V-1 s-1. Meanwhile, the p-channel devices show an ultrahigh hole mobility of 2.4 cm2 V-1 s-1. Flexible complementary logics are then established, including an inverter, NAND gates, and NOR gates. Impressively, the inverter exhibits an ultrahigh gain of 302.4 and excellent operational stability and bending reliability.
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Affiliation(s)
- Ruohao Hong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Penghui He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Sen Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xitong Hong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qianlei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Tong Bu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Wanhan Su
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Guoli Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Denis Flandre
- Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universite Catholique de Louvain, Louvain-la-Neuve B-1348, Belgium
| | - Xingqiang Liu
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
- Zhangzhou Heqi Target Technology Company, Ltd., Jiulong Industrial Park, Hua'an Economic Development Zone, Zhangzhou, Fujian 363000, P. R. China
| | - Yawei Lv
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
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