Mehta D, Naik Y, Modi N, Parmar PR, Thakor PB. Optoelectronic and photocatalytic behaviour of a type-II GaAlS
2/HfS
2heterostructure:
ab initiostudy.
NANOTECHNOLOGY 2024;
35:315703. [PMID:
38670075 DOI:
10.1088/1361-6528/ad43f3]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 04/26/2024] [Indexed: 04/28/2024]
Abstract
Theoretical examination based on first principle computation has been conducted for van der Waals heterostructure (vdwHS) GaAlS2/HfS2including structural, optoelectronic and photocatalytic characteristics. From the adhesion energy calculation, the AB configuration of GaAlS2/HfS2vdwHS is the most stable. A type-II GaAlS2/HfS2vdwHS is a dynamically and thermally stable structure. The band edge position, projected band, and projected charge densities verify the type-II alignment of GaAlS2/HfS2vdwHS. For GaAlS2/HfS2, GaAlS2is acting as a donor and HfS2is acting as an acceptor ensured by the charge density difference plot. The electron localized function validates the weak van der Waals interaction between GaAlS2and HfS2. The GaAlS2/HfS2vdwHS possess an indirect bandgap of 1.54 eV with notable absorption in the visible range. The findings assure that the GaAlS2/HfS2vdwHS is an efficient photocatalyst for pH 4-8. The band alignment of GaAlS2/HfS2is suitable for Z-scheme charge transfer. The strain influenced band edge suggests that the GaAlS2/HfS2vdwHS remains photocatalytic for strain-4%to+6%in both cases of uniaxial and biaxial strains.
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