1
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Kousar B, Carrad DJ, Stampfer L, Krogstrup P, Nygård J, Jespersen TS. InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. NANO LETTERS 2022; 22:8845-8851. [PMID: 36332116 DOI: 10.1021/acs.nanolett.2c02532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of ∼10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ∼10 K, and MoRe-based Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.
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Affiliation(s)
- Bilal Kousar
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
- Univ. Grenoble Alpes, CNRS, Institut Néel, 38000Grenoble, France
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800Kgs. Lyngby, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800Kgs. Lyngby, Denmark
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2
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Stampfer L, Carrad DJ, Olsteins D, Petersen CEN, Khan SA, Krogstrup P, Jespersen TS. Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108878. [PMID: 35050545 DOI: 10.1002/adma.202108878] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Revised: 12/29/2021] [Indexed: 06/14/2023]
Abstract
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
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Affiliation(s)
- Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Christian E N Petersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Sabbir A Khan
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, Lyngby, 2800, Denmark
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3
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Delaforce J, Sistani M, Kramer RBG, Luong MA, Roch N, Weber WM, den Hertog MI, Robin E, Naud C, Lugstein A, Buisson O. Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101989. [PMID: 34365674 DOI: 10.1002/adma.202101989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Revised: 05/31/2021] [Indexed: 06/13/2023]
Abstract
Superconductor-semiconductor-superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well as for future high-performance low power dissipating nanoelectronic and quantum devices. In this work, ultrascaled monolithic Al-Ge-Al nanowire heterostructures featuring monocrystalline Al leads and abrupt metal-semiconductor interfaces are used to probe the low-temperature transport in intrinsic Ge (i-Ge) quantum dots. In particular, demonstrating the ability to tune the Ge quantum dot device from completely insulating, through a single-hole-filling quantum dot regime, to a supercurrent regime, resembling a Josephson field effect transistor with a maximum critical current of 10 nA at a temperature of 390 mK. The realization of a Josephson field-effect transistor with high junction transparency provides a mechanism to study sub-gap transport mediated by Andreev states. The presented results reveal a promising intrinsic Ge-based architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and key components of quantum computing such as gatemons or gate tunable superconducting quantum interference devices.
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Affiliation(s)
- Jovian Delaforce
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Masiar Sistani
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Roman B G Kramer
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Minh A Luong
- Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France
| | - Nicolas Roch
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Walter M Weber
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | | | - Eric Robin
- Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France
| | - Cecile Naud
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Alois Lugstein
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Olivier Buisson
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
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4
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Yang L, Steinhauer S, Strambini E, Lettner T, Schweickert L, Versteegh MAM, Zannier V, Sorba L, Solenov D, Giazotto F. Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination. NANOTECHNOLOGY 2021; 32:075001. [PMID: 33096537 DOI: 10.1088/1361-6528/abc44e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We have studied the effects of optical-frequency light on proximitized InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying incident photon flux and at three different photon wavelengths. The experimentally obtained IV curves were modeled using a resistively shunted junction model which takes scattering at the contact interfaces into account. Despite the fact that the InAs weak link is photosensitive, the Josephson junctions were found to be surprisingly robust, interacting with the incident radiation only through heating, whereas above the critical current our devices showed non-thermal effects resulting from photon exposure. Our work indicates that Josephson junctions based on highly-doped InAs nanowires can be integrated in close proximity to photonic circuits. The results also suggest that such junctions can be used for optical-frequency photon detection through thermal processes by measuring a shift in critical current.
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Affiliation(s)
- Lily Yang
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, SE-106 91 Stockholm, Sweden
| | - Stephan Steinhauer
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, SE-106 91 Stockholm, Sweden
| | - Elia Strambini
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, Pisa I-56127, Italy
| | - Thomas Lettner
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, SE-106 91 Stockholm, Sweden
| | - Lucas Schweickert
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, SE-106 91 Stockholm, Sweden
| | - Marijn A M Versteegh
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, SE-106 91 Stockholm, Sweden
| | - Valentina Zannier
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, Pisa I-56127, Italy
| | - Lucia Sorba
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, Pisa I-56127, Italy
| | - Dmitry Solenov
- Department of Physics, Saint Louis University, St. Louis, MO 63103, United States of America
| | - Francesco Giazotto
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, Pisa I-56127, Italy
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5
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Khan SA, Lampadaris C, Cui A, Stampfer L, Liu Y, Pauka SJ, Cachaza ME, Fiordaliso EM, Kang JH, Korneychuk S, Mutas T, Sestoft JE, Krizek F, Tanta R, Cassidy MC, Jespersen TS, Krogstrup P. Highly Transparent Gatable Superconducting Shadow Junctions. ACS NANO 2020; 14:14605-14615. [PMID: 32396328 DOI: 10.1021/acsnano.0c02979] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs1-xSbx semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.
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Affiliation(s)
- Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Charalampos Lampadaris
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Ajuan Cui
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Yu Liu
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Sebastian J Pauka
- Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia
| | - Martin E Cachaza
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Jung-Hyun Kang
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Timo Mutas
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Filip Krizek
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rawa Tanta
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Maja C Cassidy
- Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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6
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Carrad DJ, Bjergfelt M, Kanne T, Aagesen M, Krizek F, Fiordaliso EM, Johnson E, Nygård J, Jespersen TS. Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908411. [PMID: 32337791 DOI: 10.1002/adma.201908411] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2019] [Revised: 02/27/2020] [Accepted: 03/23/2020] [Indexed: 06/11/2023]
Abstract
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.
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Affiliation(s)
- Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Martin Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Martin Aagesen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Danish Defence Research Center, Ballerup, 2750, Denmark
| | - Filip Krizek
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Spintronics, Institute of Physics, Czech Academy of Sciences, Praha 6, Prague, 162 00, Czech Republic
| | | | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Mechanical Engineering, Technical University of Denmark, Kgs. Lyngby, 2800, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
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7
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Estrada Saldaña JC, Žitko R, Cleuziou JP, Lee EJH, Zannier V, Ercolani D, Sorba L, Aguado R, De Franceschi S. Charge localization and reentrant superconductivity in a quasi-ballistic InAs nanowire coupled to superconductors. SCIENCE ADVANCES 2019; 5:eaav1235. [PMID: 31281880 PMCID: PMC6611689 DOI: 10.1126/sciadv.aav1235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2018] [Accepted: 05/29/2019] [Indexed: 06/09/2023]
Abstract
A semiconductor nanowire with strong spin-orbit coupling in proximity to a superconductor is predicted to display Majorana edge states emerging under a properly oriented magnetic field. The experimental investigation of these exotic states requires assessing the one-dimensional (1D) character of the nanowire and understanding the superconducting proximity effect in the presence of a magnetic field. Here, we explore the quasi-ballistic 1D transport regime of an InAs nanowire with Ta contacts. Fine-tuned by means of local gates, the observed plateaus of approximately quantized conductance hide the presence of a localized electron, giving rise to a lurking Coulomb blockade effect and Kondo physics. When Ta becomes superconducting, this local charge causes an unusual, reentrant magnetic field dependence of the supercurrent, which we ascribe to a 0 - π transition. Our results underline the relevant role of unintentional charge localization in the few-channel regime where helical subbands and Majorana quasi-particles are expected to arise.
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Affiliation(s)
| | - R. Žitko
- Jožef Stefan Institute, Jamova 39, Ljubljana, Slovenia
- Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, Ljubljana, Slovenia
| | - J. P. Cleuziou
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
| | - E. J. H. Lee
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
| | - V. Zannier
- NEST–Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, 56127 Pisa, Italy
| | - D. Ercolani
- NEST–Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, 56127 Pisa, Italy
| | - L. Sorba
- NEST–Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, 56127 Pisa, Italy
| | - R. Aguado
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain
| | - S. De Franceschi
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
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8
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Grivnin A, Bor E, Heiblum M, Oreg Y, Shtrikman H. Concomitant opening of a bulk-gap with an emerging possible Majorana zero mode. Nat Commun 2019; 10:1940. [PMID: 31036841 PMCID: PMC6488617 DOI: 10.1038/s41467-019-09771-0] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2018] [Accepted: 03/20/2019] [Indexed: 11/23/2022] Open
Abstract
Majorana quasiparticles are generally detected in a 1D topological superconductor by tunneling electrons into its edge, with an emergent zero-bias conductance peak (ZBCP). However, such a ZBCP can also result from other mechanisms, hence, additional verifications are required. Since the emergence of a Majorana must be accompanied by an opening of a topological gap in the bulk, two simultaneous measurements are performed: one in the bulk and another at the edge of a 1D InAs nanowire coated with epitaxial aluminum. Only under certain experimental parameters, a closing of the superconducting bulk-gap that is followed by its reopening, appears simultaneously with a ZBCP at the edge. Such events suggest the occurrence of a topologically non-trivial phase. Yet, we also find that ZBCPs are observed under different tuning parameters without simultaneous reopening of a bulk-gap. This demonstrates the importance of simultaneous probing of bulk and edge in the identification of Majorana edge-states.
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Affiliation(s)
- Anna Grivnin
- Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, 76100, Israel
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Ella Bor
- Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, 76100, Israel
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Moty Heiblum
- Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, 76100, Israel.
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 76100, Israel.
| | - Yuval Oreg
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 76100, Israel
| | - Hadas Shtrikman
- Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, 76100, Israel
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 76100, Israel
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9
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Zuo K, Mourik V, Szombati DB, Nijholt B, van Woerkom DJ, Geresdi A, Chen J, Ostroukh VP, Akhmerov AR, Plissard SR, Car D, Bakkers EPAM, Pikulin DI, Kouwenhoven LP, Frolov SM. Supercurrent Interference in Few-Mode Nanowire Josephson Junctions. PHYSICAL REVIEW LETTERS 2017; 119:187704. [PMID: 29219554 DOI: 10.1103/physrevlett.119.187704] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2017] [Indexed: 06/07/2023]
Abstract
Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for the potential detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that the dependence of the critical current on the magnetic field exhibits gate-tunable nodes. This is in contrast with a well-known Fraunhofer effect, under which critical current nodes form a regular pattern with a period fixed by the junction area. Based on a realistic numerical model we conclude that the Zeeman effect induced by the magnetic field and the spin-orbit interaction in the nanowire are insufficient to explain the observed evolution of the Josephson effect. We find the interference between the few occupied one-dimensional modes in the nanowire to be the dominant mechanism responsible for the critical current behavior. We also report a strong suppression of critical currents at finite magnetic fields that should be taken into account when designing circuits based on Majorana bound states.
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Affiliation(s)
- Kun Zuo
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Vincent Mourik
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Centre for Quantum Computation and Communication Technologies, School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, New South Wales 2052, Australia
| | - Daniel B Szombati
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Australian Research Council Centre of Excellence for Engineered Quantum Systems, St Lucia, Queensland 4072, Australia
- School of Mathematics and Physics, University of Queensland, St Lucia, Queensland 4072, Australia
| | - Bas Nijholt
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - David J van Woerkom
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Department of Physics, ETH Zurich, CH-8093 Zurich, Switzerland
| | - Attila Geresdi
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Jun Chen
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | | | - Anton R Akhmerov
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Sebastién R Plissard
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - Diana Car
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - Erik P A M Bakkers
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - Dmitry I Pikulin
- Station Q, Microsoft Research, Santa Barbara, California 93106-6105, USA
- Department of Physics and Astronomy, University of British Columbia, Vancouver British Columbia, Canada V6T 1Z1
- Quantum Matter Institute, University of British Columbia, Vancouver British Columbia, Canada V6T 1Z4
| | - Leo P Kouwenhoven
- QuTech, Delft University of Technology, 2600 GA Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Station Q Delft, Microsoft Research, 2600 GA, Delft, Netherlands
| | - Sergey M Frolov
- Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
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