Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy

Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO

The maximum efficiency of solar cells utilizing a single layer for photovoltaic conversion is given by the single junction Shockley-Queisser limit. In tandem solar cells, a stack of materials with different band gaps contribute to the conversion, enabling tandem cells to exceed the single junction Shockley-Queisser limit. An intriguing variant of this approach is to embed semiconducting nanoparticles in a transparent conducting oxide (TCO) solar cell front contact. This alternative route would enhance the functionality of the TCO layer, allowing it to participate directly in photovoltaic conversion via photon absorption and charge carrier generation in the nanoparticles. Here, we demonstrate the functionalization of ZnO through incorporation of either ZnFe2O4 spinel nanoparticles (NPs) or inversion domain boundaries (IDBs) decorated by Fe. Diffuse reflectance spectroscopy and electron energy loss spectroscopy show that samples containing spinel particles and samples containing IDBs decorated by Fe both display enhanced absorption in the visible range at around 2.0 and 2.6 eV. This striking functional similarity was attributed to the local structural similarity around Fe-ions in spinel ZnFe2O4 and at Fe-decorated basal IDBs. Hence, functional properties of the ZnFe2O4 arise already for the two-dimensional basal IDBs, from which these planar defects behave like two-dimensional spinel-like inclusions in ZnO. Cathodoluminescence spectra reveal an increased luminescence around the band edge of spinel ZnFe2O4 when measuring on the spinel ZnFe2O4 NPs embedded in ZnO, whereas spectra from Fe-decorated IDBs could be deconvoluted into luminescence contributions from bulk ZnO and bulk ZnFe2O4.

Local electronic structure variation resulting in Li 'filament' formation within solid electrolytes

Solid electrolytes hold great promise for enabling the use of Li metal anodes. The main problem is that during cycling, Li can infiltrate along grain boundaries and cause short circuits, resulting in potentially catastrophic battery failure. At present, this phenomenon is not well understood. Here, through electron microscopy measurements on a representative system, Li₇La₃Zr₂O₁₂, we discover that Li infiltration in solid oxide electrolytes is strongly associated with local electronic band structure. About half of the Li₇La₃Zr₂O₁₂ grain boundaries were found to have a reduced bandgap, around 1-3 eV, making them potential channels for leakage current. Instead of combining with electrons at the cathode, Li⁺ ions are hence prematurely reduced by electrons at grain boundaries, forming local Li filaments. The eventual interconnection of these filaments results in a short circuit. Our discovery reveals that the grain-boundary electronic conductivity must be a primary concern for optimization in future solid-state battery design.

ZnCr₂O₄ Inclusions in ZnO Matrix Investigated by Probe-Corrected STEM-EELS

The ZnCr₂O₄/ZnO materials system has a wide range of potential applications, for example, as a photocatalytic material for waste-water treatment and gas sensing. In this study, probe-corrected high-resolution scanning transmission electron microscopy and geometric phase analysis were utilized to study the dislocation structure and strain distribution at the interface between zinc oxide (ZnO) and embedded zinc chromium oxide (ZnCr₂O₄) particles. Ball-milled and dry-pressed ZnO and chromium oxide (α-Cr₂O₃) powder formed ZnCr₂O₄ inclusions in ZnO with size ~400 nm, where the interface properties depended on the interface orientation. In particular, sharp interfaces were observed for ZnO [2113]/ZnCr₂O₄ [110] orientations, while ZnO [1210]/ZnCr₂O₄ [112] orientations revealed an interface over several atomic layers, with a high density of dislocations. Further, monochromated electron energy-loss spectroscopy was employed to map the optical band gap of ZnCr₂O₄ nanoparticles in the ZnO matrix and their interface, where the average band gap of ZnCr₂O₄ nanoparticles was measured to be 3.84 ± 0.03 eV, in contrast to 3.22 ± 0.01 eV for the ZnO matrix.

Band gap maps beyond the delocalization limit: correlation between optical band gaps and plasmon energies at the nanoscale

Recent progresses in nanoscale semiconductor technology have heightened the need for measurements of band gaps with high spatial resolution. Band gap mapping can be performed through a combination of probe-corrected scanning transmission electron microscopy (STEM) and monochromated electron energy-loss spectroscopy (EELS), but are rare owing to the complexity of the experiments and the data analysis. Furthermore, although this method is far superior in terms of spatial resolution to any other techniques, it is still fundamentally resolution-limited due to inelastic delocalization of the EELS signal. In this work we have established a quantitative correlation between optical band gaps and plasmon energies using the Zn_1−xCd_xO/ZnO system as an example, thereby side-stepping the fundamental resolution limits of band gap measurements, and providing a simple and convenient approach to achieve band gap maps with unprecedented spatial resolution.