The possibility of multi-layer nanofabrication via atomic force microscope-based pulse electrochemical nanopatterning

Structure Fabrication on Silicon at Atomic and Close-To-Atomic Scale Using Atomic Force Microscopy: Implications for Nanopatterning and Nanodevice Fabrication

In this paper, the atomic-scale structure fabrication on Si (100) substrate using atomic force microscopy (AFM) with the aid of electrochemical and mechanical processes in a humid environment and under ambient conditions is studied. The local oxidation patterns are formed using platinum-coated tips with the aid of bias applied to the tip-substrate junction, and direct removal has been achieved using single crystal diamond tips, enabling the structure fabrication at the atomic and close-to-atomic scale. The depth and height of the etched trenches reached about 1 nm, which provides an approach for the fabrication of atomic-scale electrodes for molecular device development. Furthermore, material removal close to about three silicon atoms (~3.2 Å) has been achieved. This is important in molecular device fabrication. A detailed comparison among the nanopatterns and the material removal over bare and hydrofluoric acid (HF) treated silicon substrates is provided. This comparison is useful for the application of fabricating atomic-scale electrodes needed for the molecular electronic components. A deep understanding of atomic-scale material removal can be pushed to fabricate a single atomic protrusion by removing the neighbouring atoms so that the molecule can be attached to a single atom, thereby the AFM tip and Si substrate could act as the electrodes and the molecule between them as the channel, providing basic transistor actions in a molecular transistor design. In this paper, platinum-coated and single-crystal diamond tips are used to explain the oxide formations and direct material removal, respectively.

Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions

Topographic nanomanufacturing with a depth precision down to atomic dimension is of importance for advancement of nanoelectronics with new functionalities. Here we demonstrate a mask-less and chemical-free nanolithography process for regio-specific removal of atomic layers on a single crystalline silicon surface via shear-induced mechanochemical reactions. Since chemical reactions involve only the topmost atomic layer exposed at the interface, the removal of a single atomic layer is possible and the crystalline lattice beneath the processed area remains intact without subsurface structural damages. Molecular dynamics simulations depict the atom-by-atom removal process, where the first atomic layer is removed preferentially through the formation and dissociation of interfacial bridge bonds. Based on the parametric thresholds needed for single atomic layer removal, the critical energy barrier for water-assisted mechanochemical dissociation of Si–Si bonds was determined. The mechanochemical nanolithography method demonstrated here could be extended to nanofabrication of other crystalline materials.

The continued scaling of silicon based electronic devices requires the development of increasingly innovative approaches for high-precision material removal. Here, the authors demonstrate subnanometre depth removal of silicon using scanning probe, shear-induced mechanochemical reactions.