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Islam S, Shamim S, Ghosh A. Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109671. [PMID: 35545231 DOI: 10.1002/adma.202109671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Revised: 05/01/2022] [Indexed: 06/15/2023]
Abstract
As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.
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Affiliation(s)
- Saurav Islam
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | - Saquib Shamim
- Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
- Institute for Topological Insulators, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
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Zhang B, Hu C, Xin Y, Li Y, Xie Y, Xing Q, Guo Z, Xue Z, Li D, Zhang G, Geng L, Ke Z, Wang C. Analysis of Low-Frequency 1/f Noise Characteristics for MoTe 2 Ambipolar Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1325. [PMID: 35458035 PMCID: PMC9030018 DOI: 10.3390/nano12081325] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 04/05/2022] [Accepted: 04/06/2022] [Indexed: 11/29/2022]
Abstract
Low-frequency electronic noise is an important parameter used for the electronic and sensing applications of transistors. Here, we performed a systematic study on the low-frequency noise mechanism for both p-channel and n-channel MoTe2 field-effect transistors (FET) at different temperatures, finding that low-frequency noise for both p-type and n-type conduction in MoTe2 devices come from the variable range hopping (VRH) transport process where carrier number fluctuations (CNF) occur. This process results in the broad distribution of the waiting time of the carriers between successive hops, causing the noise to increase as the temperature decreases. Moreover, we found the noise magnitude for p-type MoTe2 FET hardly changed after exposure to the ambient conditions, whereas for n-FET, the magnitude increased by nearly one order. These noise characteristics may provide useful guidelines for developing high-performance electronics based on the emerging transition metal dichalcogenides.
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Affiliation(s)
- Bing Zhang
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Congzhen Hu
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Youze Xin
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Yaoxin Li
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Yiyun Xie
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Qian Xing
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Zhuoqi Guo
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Zhongming Xue
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Dan Li
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Guohe Zhang
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Li Geng
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China; (C.H.); (Y.X.); (Y.L.); (Y.X.); (Q.X.); (Z.G.); (Z.X.); (D.L.); (G.Z.); (L.G.)
- Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Zungui Ke
- Detector Laboratory of Southwest Institute of Technical Physics, Chengdu 610041, China;
| | - Chi Wang
- ABAX Sensing Inc., Ningbo 315502, China;
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Pak J, Lee I, Cho K, Kim JK, Jeong H, Hwang WT, Ahn GH, Kang K, Yu WJ, Javey A, Chung S, Lee T. Intrinsic Optoelectronic Characteristics of MoS 2 Phototransistors via a Fully Transparent van der Waals Heterostructure. ACS NANO 2019; 13:9638-9646. [PMID: 31345021 DOI: 10.1021/acsnano.9b04829] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.
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Affiliation(s)
- Jinsu Pak
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Ilmin Lee
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Kyungjune Cho
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Jae-Keun Kim
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Hyunhak Jeong
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Wang-Taek Hwang
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Geun Ho Ahn
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
| | - Keehoon Kang
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Ali Javey
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
| | - Seungjun Chung
- Photo-Electronic Hybrids Research Center , Korea Institute of Science and Technology (KIST) , Seoul 02792 , Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea
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Yang M, Kim TY, Lee T, Hong S. Nanoscale enhancement of photoconductivity by localized charge traps in the grain structures of monolayer MoS 2. Sci Rep 2018; 8:15822. [PMID: 30361562 PMCID: PMC6202400 DOI: 10.1038/s41598-018-34209-w] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2018] [Accepted: 10/12/2018] [Indexed: 12/03/2022] Open
Abstract
We report a method for mapping the nanoscale anomalous enhancement of photoconductivity by localized charge traps in the grain structures of a molybdenum disulfide (MoS2) monolayer. In this work, a monolayer MoS2 film was laterally scanned by a nanoscale conducting probe that was used to make direct contact with the MoS2 surface. Electrical currents and noise maps were measured through the probe. By analyzing the data, we obtained maps for the sheet resistance and charge trap density for the MoS2 grain structures. The maps clearly show grains for which sheet resistance and charge trap density were lower than those of the grain boundaries. Interestingly, we found an unusual inverse proportionality between the sheet resistance and charge trap density in the grains, which originated from the unique role of sulfur vacancies acting as both charge hopping sites and traps in monolayer MoS2. In addition, under light illumination, the larger the trap density of a region was, the larger the photocurrent of the region was, indicating anomalous enhancement of the photocurrent by traps. Since our method provides valuable insights to understand the nanoscale effects of traps on photoconductive charge transport, it can be a powerful tool for noise studies and the practical application of two-dimensional materials.
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Affiliation(s)
- Myungjae Yang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Tae-Young Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Seunghun Hong
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea.
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