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Wang HP, Li S, Liu X, Shi Z, Fang X, He JH. Low-Dimensional Metal Halide Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003309. [PMID: 33346383 DOI: 10.1002/adma.202003309] [Citation(s) in RCA: 160] [Impact Index Per Article: 53.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2020] [Revised: 07/21/2020] [Indexed: 05/24/2023]
Abstract
Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.
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Affiliation(s)
- Hsin-Ping Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xinya Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
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Kahwagi RF, Thornton ST, Smith B, Koleilat GI. Dimensionality engineering of metal halide perovskites. FRONTIERS OF OPTOELECTRONICS 2020; 13:196-224. [PMID: 36641576 PMCID: PMC9743879 DOI: 10.1007/s12200-020-1039-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2020] [Accepted: 06/22/2020] [Indexed: 05/11/2023]
Abstract
Metal halide perovskites are a class of materials that are ideal for photodetectors and solar cells due to their excellent optoelectronic properties. Their low-cost and low temperature synthesis have made them attractive for extensive research aimed at revolutionizing the semiconductor industry. The rich chemistry of metal halide perovskites allows compositional engineering resulting in facile tuning of the desired optoelectronic properties. Moreover, using different experimental synthesis and deposition techniques such as solution processing, chemical vapor deposition and hot-injection methods, the dimensionality of the perovskites can be altered from 3D to 0D, each structure opening a new realm of applications due to their unique properties. Dimensionality engineering includes both morphological engineering-reducing the thickness of 3D perovskite into atomically thin films-and molecular engineering-incorporating long-chain organic cations into the perovskite mixture and changing the composition at the molecular level. The optoelectronic properties of the perovskite structure including its band gap, binding energy and carrier mobility depend on both its composition and dimensionality. The plethora of different photodetectors and solar cells that have been made with different compositions and dimensions of perovskite will be reviewed here. We will conclude our review by discussing the kinetics and dynamics of different dimensionalities, their inherent stability and toxicity issues, and how reaching similar performance to 3D in lower dimensionalities and their large-scale deployment can be achieved.
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Affiliation(s)
- Rashad F Kahwagi
- Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada
| | - Sean T Thornton
- Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada
| | - Ben Smith
- Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada
| | - Ghada I Koleilat
- Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada.
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Huang F, Li J, Xu Z, Liu Y, Luo R, Zhang SW, Nie P, Lv Y, Zhao S, Su W, Li WD, Zhao S, Wei G, Kuo HC, Kang F. A Bilayer 2D-WS 2/Organic-Based Heterojunction for High-Performance Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E1312. [PMID: 31540315 PMCID: PMC6781271 DOI: 10.3390/nano9091312] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2019] [Revised: 09/09/2019] [Accepted: 09/10/2019] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N, N'-bis-4-butylphenyl-N, N'-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 × 1011 Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.
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Affiliation(s)
- Feng Huang
- College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Jingzhou Li
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China.
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Zhuhua Xu
- College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Yuan Liu
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Ripeng Luo
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China.
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Si-Wei Zhang
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China.
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Pengbo Nie
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China.
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Yanfei Lv
- College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Shixi Zhao
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Weitao Su
- College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Wen-Di Li
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, China.
| | - Shichao Zhao
- College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Guodan Wei
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China.
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
| | - Hao-Chung Kuo
- Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
- Department of Electrical Engineering and Computer Sciences and Tsinghua-Berkeley Shenzhen Institute (TBSI), University of California at Berkeley, Berkeley, CA 94720, USA.
| | - Feiyu Kang
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China.
- Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518000, China.
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Lin T, Wang J. Strategies toward High-Performance Solution-Processed Lateral Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901473. [PMID: 31243827 DOI: 10.1002/adma.201901473] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2019] [Revised: 04/26/2019] [Indexed: 05/26/2023]
Abstract
Due to their low cost and ease of integration, solution-processed lateral photodetectors (PDs) are becoming an important device type among the PD family. In recent years, enormous effort has been devoted to improving their performances, and great achievements have been made. A summary of the core progress, especially from the perspective of design principles and device physics, is necessary to further the development of the field, but is currently lacking. Here, to address this need, first, the working mechanism of PDs and the device figures-of-merit are introduced. Second, by classifying the active materials into four categories, including inorganic, organic, hybrid, and perovskite, the developed strategies toward high performance are discussed respectively. To close, the common physical rules behind all these strategies are generalized, and suggestions for future development are given accordingly.
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Affiliation(s)
- Tao Lin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jizheng Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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Enhanced Photoresponsivity of All-Inorganic (CsPbBr3) Perovskite Nanosheets Photodetector with Carbon Nanodots (CDs). ELECTRONICS 2019. [DOI: 10.3390/electronics8060678] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
A hybrid composite photodetector based on cesium lead bromine perovskite (CsPbBr3) nanosheets and carbon nanodots (CDs) was fabricated on a quartz substrate by a one-step method of spin-coating and hot-plate annealing. The responsivity of the CsPbBr3/CD hybrid composite photodetector was 608 mAW−1 (under a 520-nm laser diode source applied at 0.2 mWcm−2), almost three times higher than that of a CsPbBr3-based photodetector (221 mAW−1). The enhanced performance of the CsPbBr3/CD photodetector is attributable to the high band alignment of the CDs and CsPbBr3, which significantly improves the charge extraction at the CsPbBr3/CD interface. Moreover, the hybrid CsPbBr3/CD photodetector exhibited a fast response time with a rise and decay time of 1.55 and 1.77 ms, which was faster than that of a pure CsPbBr3 based photodetector, indicating that the CDs accelerate the extraction of electrons and holes trapped in the CsPbBr3 film.
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Abstract
Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.
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Ma J, Fang C, Chen C, Jin L, Wang J, Wang S, Tang J, Li D. Chiral 2D Perovskites with a High Degree of Circularly Polarized Photoluminescence. ACS NANO 2019; 13:3659-3665. [PMID: 30856318 DOI: 10.1021/acsnano.9b00302] [Citation(s) in RCA: 207] [Impact Index Per Article: 41.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Chiral materials are of particular interest and have a wide range of potential applications in life science, material science, spintronic, and optoelectronic devices. Two-dimensional (2D) hybrid organic-inorganic lead halide perovskites have attracted increasing attention. Incorporating the chiral organic ligands into the layered lead iodide frameworks would introduce strong chirality in pure 2D perovskites for potential applications in circularly polarized light (CPL) emission and detection; nonetheless, studies on those aspects are still in their infancy. Here, we report on the strong CPL emission and sensitive CPL detection in the visible-wavelength range in pure chiral ( R-/ S-MBA)2PbI4 (MBA = C6H5C2H4NH3) 2D perovskites, which are successfully synthesized with a needle shape and millimeter size by incorporating the chiral molecules. The chiral 2D perovskites ( R-MBA)2PbI4 and ( S-MBA)2PbI4 exhibit an average degree of circularly polarized photoluminescence (PL) of 9.6% and 10.1% at 77 K, respectively, and a maximum degree of the circularly polarized PL of 17.6% is achieved in ( S-MBA)2PbI4. The degree of circularly polarized PL dramatically decreases with increasing temperature, implying that the lattice distortion induced by the incorporated chiral molecules and/or temperature-dependent spin flipping might be the origin for the observed chirality. Finally, CPL detection has been achieved with decent performance in our chiral 2D perovskite microplate/MoS2 heterostructural devices. The high degree of the circularly polarized PL and excellent CPL detection together with the layered nature of pure chiral 2D perovskites enables them to be a class of very promising materials for developing and exploring spin associated electronic devices based on the chiral 2D perovskites.
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Affiliation(s)
- Jiaqi Ma
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Chen Fang
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Long Jin
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jiaqi Wang
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Shuai Wang
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Dehui Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
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Kim Y, Kim J, Ko H, Park B. The formation of a functional pentacene/CH 3NH 3PbI 3-xCl x perovskite interface: optical gating and field-induced charge retention. NANOSCALE 2018; 10:19383-19389. [PMID: 30307003 DOI: 10.1039/c8nr05344h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We fabricated a functional pentacene/CH3NH3PbI3-xClx perovskite interface where optical gating and field assisted charge retention occur. Using a pentacene/perovskite field effect transistor (FET) test platform, we investigated the interfacial charge transfer associated with optical gating through threshold voltage measurements under illumination. Importantly, bistable electrical conduction in pentacene/perovskite FET devices was achieved as a result of field-induced charge retention at the interface and the origin is discussed to be associated with interfacial charging at the pentacene/perovskite interface. Interfacial contact modification associated with ion migration and other possible effects in the perovskite layer plays a crucial role in forming a functional interface involving organic semiconducting materials.
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Affiliation(s)
- Youngjun Kim
- Department of Materials Science and Engineering Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea.
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Wang K, Wu C, Yang D, Jiang Y, Priya S. Quasi-Two-Dimensional Halide Perovskite Single Crystal Photodetector. ACS NANO 2018; 12:4919-4929. [PMID: 29683643 DOI: 10.1021/acsnano.8b01999] [Citation(s) in RCA: 104] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The robust material stability of the quasi-two-dimensional (quasi-2D) metal halide perovskites has opened the possibility for their usage instead of three-dimensional (3D) perovskites. Further, devices based on large area single crystal membranes have shown increasing promise for photoelectronic applications. However, growing inch-scale quasi-2D perovskite single crystal membranes (quasi-2D PSCMs) has been fundamentally challenging. Here we report a fast synthetic method for synthesizing inch-scale quasi-2D PSCMs, namely (C4H9NH3) n(CH3NH3) n-1Pb nI3 n+1 (index n = 1, 2, 3, 4, and ∞), and demonstrate their application in a single-crystal photodetector. A quasi-2D PSCM has been grown at the water-air interface where spontaneous alignment of alkylammonium cations and high chemical potentials enable uniform orientation and fast in-plane growth. Structural, optical, and electrical characterizations have been conducted as a function of quantum well thickness, which is determined by the index n. It is shown that the photodetector based on the quasi-2D PSCM with the smallest quantum well thickness ( n = 1) exhibits a strikingly low dark current of ∼10-13 A, higher on/off ratio of ∼104, and faster response time in comparison to those of photodetectors based on quasi-2D PSCMs with larger quantum well thickness ( n > 1). Our study paves the way toward the merging the gap between single crystal devices and the emerging quasi-2D perovskite materials.
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Affiliation(s)
- Kai Wang
- Center for Energy Harvesting Materials and Systems (CEHMS) , Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Congcong Wu
- Center for Energy Harvesting Materials and Systems (CEHMS) , Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Dong Yang
- Center for Energy Harvesting Materials and Systems (CEHMS) , Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Yuanyuan Jiang
- Center for Energy Harvesting Materials and Systems (CEHMS) , Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Shashank Priya
- Center for Energy Harvesting Materials and Systems (CEHMS) , Virginia Tech , Blacksburg , Virginia 24061 , United States
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