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Sasaki M, Akamatsu T, Tomioka K, Motohisa J. Size control of InP nanowires by in situannealing and its application to the formation of InAsP quantum dots. NANOTECHNOLOGY 2024; 35:195604. [PMID: 38306695 DOI: 10.1088/1361-6528/ad2570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
We carried outin situannealing of InP nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, the InP NWs had a hexagonal cross-section with{112¯}facets vertical to the substrates; they became tapered, and the edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20 nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of the NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.
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Affiliation(s)
- Masahiro Sasaki
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Tomoya Akamatsu
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Katsuhiro Tomioka
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Junichi Motohisa
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Park JH, Chung CH. Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method. NANOSCALE RESEARCH LETTERS 2019; 14:355. [PMID: 31781969 PMCID: PMC6883012 DOI: 10.1186/s11671-019-3193-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2019] [Accepted: 10/28/2019] [Indexed: 06/10/2023]
Abstract
We report optical phonon vibration modes in ensembles of self-catalyzed InP/InAs/InP multi core-shell one-dimensional nanostructures (nanopillars and nanocones) grown on InP(111)B substrates using liquid indium droplets as a catalyst via metal-organic chemical vapor deposition. We characterized the Raman vibration modes of InAs E1(TO), InAs A1(TO), InAs E1(LO), InP E1(TO), InP A1(LO), and InP E1(LO) from the ensemble of as-grown nanostructures. We also identified second-order Raman vibration modes, associated with InP E1(2TO), E1(LO+TO), and E1(2LO), in the InP/InAs/InP core-shell nanopillars and nanocones. Raman spectra of InP/InAs/InP nanopillars showed redshift and broadening of LO modes at low-frequency branches of InAs and InP. Due to the polar nature in groups III-V nanowires, we observed strong frequency splitting between InAs E1(TO) and InAs A1(LO) in InP/InAs/InP nanocones. The Raman resonance intensities of InP and InAs LO modes are found to be changed linearly with an excitation power. By tilting the substrate relative to the incoming laser beam, we observed strong suppression of low-frequency branch of InP and InAs LO phonon vibrations from InP/InAs/InP nanocones. The integrated intensity ratio of InP E1(TO)/E1(LO) for both nanostructures is almost constant at 0-degree tilt, but the ratio of the nanocones is dramatically increased at 30-degree tilt. Our results suggest that Raman spectroscopy characterization with a simple substrate tilting method can provide new insights into non-destructive characterization of the shape, structure, and composition of the as-grown nanostructures for the wafer-scale growth and integration processing of groups III-V semiconducting hetero-nanostructures into nanoelectronics and photonics applications.
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Affiliation(s)
- Jeung Hun Park
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, NJ, 08544, USA.
| | - Choong-Heui Chung
- Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
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Zhang G, Takiguchi M, Tateno K, Tawara T, Notomi M, Gotoh H. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. SCIENCE ADVANCES 2019; 5:eaat8896. [PMID: 30801006 PMCID: PMC6386577 DOI: 10.1126/sciadv.aat8896] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 12/28/2018] [Indexed: 05/28/2023]
Abstract
Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.
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Affiliation(s)
- Guoqiang Zhang
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Kouta Tateno
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Takehiko Tawara
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Cox JW, Foster GM, Jarjour A, von Wenckstern H, Grundmann M, Brillson LJ. Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts. NANO LETTERS 2018; 18:6974-6980. [PMID: 30384614 DOI: 10.1021/acs.nanolett.8b02892] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Surface states that induce depletion regions are commonly believed to control the transport of charged carriers through semiconductor nanowires. However, direct, localized optical, and electrical measurements of ZnO nanowires show that native point defects inside the nanowire bulk and created at metal-semiconductor interfaces are electrically active and play a dominant role electronically, altering the semiconductor doping, the carrier density along the wire length, and the injection of charge into the wire. We used depth-resolved cathodoluminescence spectroscopy to measure the densities of multiple point defects inside ZnO nanowires, substitutional Cu on Zn sites, zinc vacancy, and oxygen vacancy defects, showing that their densities varied strongly both radially and lengthwise for tapered wires. These defect profiles and their variation with wire diameter produce trap-assisted tunneling and acceptor trapping of free carriers, the balance of which determines the low contact resistivity (2.6 × 10-3 Ω·cm-2) ohmic, Schottky (Φ ≥ 0.35 eV) or blocking nature of Pt contacts to a single nano/microwire. We show how these defects can now be manipulated by ion beam methods and nanowire design, opening new avenues to control nanowire charge injection and transport.
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Affiliation(s)
- Jonathan W Cox
- Department of Electrical and Computer Engineering , The Ohio State University , 205 Dreese Lab, 2015 Neil Avenue , Columbus , Ohio 43210 , United States
| | - Geoffrey M Foster
- Department of Physics , Ohio State University , 191 W. Woodruff Avenue , Columbus , Ohio 43210 , United States
| | - Alexander Jarjour
- Department of Physics , Cornell University , 171 Clark Hall , Ithaca , New York 14850 , United States
| | - Holger von Wenckstern
- Institut für Experimentelle Physik II , Universität Leipzig , Linnéstrasse 5 , 04103 Leipzig , Germany
| | - Marius Grundmann
- Institut für Experimentelle Physik II , Universität Leipzig , Linnéstrasse 5 , 04103 Leipzig , Germany
| | - Leonard J Brillson
- Department of Electrical and Computer Engineering , The Ohio State University , 205 Dreese Lab, 2015 Neil Avenue , Columbus , Ohio 43210 , United States
- Department of Physics , Ohio State University , 191 W. Woodruff Avenue , Columbus , Ohio 43210 , United States
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