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Chen L, Zhang S, Duan Y, Song X, Chang M, Feng W, Chen Y. Silicon-containing nanomedicine and biomaterials: materials chemistry, multi-dimensional design, and biomedical application. Chem Soc Rev 2024; 53:1167-1315. [PMID: 38168612 DOI: 10.1039/d1cs01022k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
The invention of silica-based bioactive glass in the late 1960s has sparked significant interest in exploring a wide range of silicon-containing biomaterials from the macroscale to the nanoscale. Over the past few decades, these biomaterials have been extensively explored for their potential in diverse biomedical applications, considering their remarkable bioactivity, excellent biocompatibility, facile surface functionalization, controllable synthesis, etc. However, to expedite the clinical translation and the unexpected utilization of silicon-composed nanomedicine and biomaterials, it is highly desirable to achieve a thorough comprehension of their characteristics and biological effects from an overall perspective. In this review, we provide a comprehensive discussion on the state-of-the-art progress of silicon-composed biomaterials, including their classification, characteristics, fabrication methods, and versatile biomedical applications. Additionally, we highlight the multi-dimensional design of both pure and hybrid silicon-composed nanomedicine and biomaterials and their intrinsic biological effects and interactions with biological systems. Their extensive biomedical applications span from drug delivery and bioimaging to therapeutic interventions and regenerative medicine, showcasing the significance of their rational design and fabrication to meet specific requirements and optimize their theranostic performance. Additionally, we offer insights into the future prospects and potential challenges regarding silicon-composed nanomedicine and biomaterials. By shedding light on these exciting research advances, we aspire to foster further progress in the biomedical field and drive the development of innovative silicon-composed nanomedicine and biomaterials with transformative applications in biomedicine.
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Affiliation(s)
- Liang Chen
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Shanshan Zhang
- Department of Ultrasound Ruijin Hospital, Shanghai Jiaotong University School of Medicine, Shanghai 200025, P. R. China
| | - Yanqiu Duan
- Laboratory Center, Shanghai Municipal Hospital of Traditional Chinese Medicine, Shanghai University of Traditional Chinese Medicine, Shanghai, 200071, P. R. China.
| | - Xinran Song
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Meiqi Chang
- Laboratory Center, Shanghai Municipal Hospital of Traditional Chinese Medicine, Shanghai University of Traditional Chinese Medicine, Shanghai, 200071, P. R. China.
| | - Wei Feng
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Yu Chen
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
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Zhang P, Zhang L, Lyu F, Wang D, Zhang L, Wu K, Wang S, Tang C. Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1269. [PMID: 37049362 PMCID: PMC10096760 DOI: 10.3390/nano13071269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/27/2023] [Accepted: 04/02/2023] [Indexed: 06/19/2023]
Abstract
In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiNxOy) systems. Within an integration sphere, we directly measured the PL EQE values of a-SiNxOy, which ranged from approximately 2% to 10% in the visible range at room temperature. Then, we calculated the related PL IQE through temperature-dependent PL measurements. The obtained PL IQE values (~84% at 480 nm emission peak wavelength) were very high compared with those of reported Si-based luminescent thin films. We also calculated the temperature-dependent PL EQE values of a-SiNxOy systems, and discussed the related PL mechanisms.
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Affiliation(s)
- Pengzhan Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
| | - Leng Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
| | - Fei Lyu
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Danbei Wang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Ling Zhang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Kongpin Wu
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Sake Wang
- College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Chunmei Tang
- College of Science, Hohai University, Nanjing 210098, China
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Hao H, Zhao Y, Song T, Wang X, Li C, Li W, Shen W. Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals. NANOTECHNOLOGY 2021; 32:505611. [PMID: 34584021 DOI: 10.1088/1361-6528/ac2ac1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Accepted: 09/27/2021] [Indexed: 06/13/2023]
Abstract
Herein, we report an enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode. c-Si NCs were synthesized by facile femtosecond laser ablation. Based on the structural characterization and opto-electrics properties analysis, both photoluminescence and electroluminescence arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency have been obtained to be 0.79 mW cm-2and ∼6.6%, respectively. These results indicate that Si NCs are very attractive as a potential optical source for future integrated chips.
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Affiliation(s)
- Huilian Hao
- College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China
| | - Yue Zhao
- College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China
| | - Tianliang Song
- College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China
| | - Xu Wang
- College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China
| | - Changwang Li
- College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China
| | - Wenyao Li
- College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China
| | - Wenzhong Shen
- Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240, People's Republic of China
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Morozova S, Alikina M, Vinogradov A, Pagliaro M. Silicon Quantum Dots: Synthesis, Encapsulation, and Application in Light-Emitting Diodes. Front Chem 2020; 8:191. [PMID: 32318540 PMCID: PMC7154098 DOI: 10.3389/fchem.2020.00191] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2019] [Accepted: 03/02/2020] [Indexed: 12/29/2022] Open
Abstract
Silicon quantum dots (SiQDs) are semiconductor Si nanoparticles ranging from 1 to 10 nm that hold great applicative potential as optoelectronic devices and fluorescent bio-marking agents due to their ability to fluoresce blue and red light. Their biocompatibility compared to conventional toxic Group II-VI and III-V metal-based quantum dots makes their practical utilization even more attractive to prevent environmental pollution and harm to living organisms. This work focuses on their possible use for light-emitting diode (LED) manufacturing. Summarizing the main achievements over the past few years concerning different Si quantum dot synthetic methods, LED formation and characteristics, and strategies for their stabilization by microencapsulation and modification of their surface by specific ligands, this work aims to provide guidance en route to the development of the first stable Si-based light-emitting diodes.
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Affiliation(s)
- Sofia Morozova
- Laboratory of Inkjet Printing of Functional Materials, SCAMT Institute, ITMO University, Saint-Petersburg, Russia
| | - Mariya Alikina
- Laboratory of Inkjet Printing of Functional Materials, SCAMT Institute, ITMO University, Saint-Petersburg, Russia
| | - Aleksandr Vinogradov
- Laboratory of Inkjet Printing of Functional Materials, SCAMT Institute, ITMO University, Saint-Petersburg, Russia
| | - Mario Pagliaro
- Istituto per lo Studio dei Materiali Nanostrutturati, CNR, Palermo, Italy
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d’Amora M, Rodio M, Sancataldo G, Diaspro A, Intartaglia R. Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development. ACS APPLIED BIO MATERIALS 2018; 2:321-329. [DOI: 10.1021/acsabm.8b00609] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Marta d’Amora
- Nanophysics, Istituto Italiano di Tecnologia, Via Morego 30, Genoa 16163, Italy
| | - Marina Rodio
- Hamburg Centre for Ultrafast Imaging, Luruper Chaussee 149, Hamburg 22761, Germany
- Physical Chemistry, Hamburg University, Martin-Luther-King Platz 6, Hamburg 20146, Germany
| | - Giuseppe Sancataldo
- Nanophysics, Istituto Italiano di Tecnologia, Via Morego 30, Genoa 16163, Italy
- European Laboratory for Non-linear Spectroscopy (LENS), University of Florence, Sesto Fiorentino, Florence 50121, Italy
| | - Alberto Diaspro
- Nanophysics, Istituto Italiano di Tecnologia, Via Morego 30, Genoa 16163, Italy
| | - Romuald Intartaglia
- Nanophysics, Istituto Italiano di Tecnologia, Via Morego 30, Genoa 16163, Italy
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Zhang P, Zhang L, Wu Y, Wang S, Ge X. High photoluminescence quantum yields generated from N-Si-O bonding states in amorphous silicon oxynitride films. OPTICS EXPRESS 2018; 26:31617-31625. [PMID: 30650745 DOI: 10.1364/oe.26.031617] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2018] [Accepted: 11/02/2018] [Indexed: 06/09/2023]
Abstract
We investigated the high absolute photoluminescence quantum yields (PL QYs) from tunable luminescent amorphous silicon oxynitride (a-SiNxOy) films. The PL QY of 8.38 percent has been achieved at PL peak energy of 2.55 eV in a-SiNxOy systems, which is higher than those of reported nanocrystal-Si embedded silicon nitride films. The existence of N-Si-O bonding states was confirmed by performing FTIR, XPS and EPR measurements. The PL QY is proportional to the concentration of Nx defects, indicating the dominant contribution of luminescent N-Si-O bonding states in radiative recombination processes. Particularly, we precisely monitored the ns-PL lifetimes evolution profile versus detected emission wavelengths, and further verified that the N-Si-O bonding states are responsible for highly efficient PL.
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