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Hilliard D, Tauchnitz T, Hübner R, Vasileiadis I, Gkotinakos A, Dimitrakopulos G, Komninou P, Sun X, Winnerl S, Schneider H, Helm M, Dimakis E. At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures. ACS NANO 2024. [PMID: 38970499 DOI: 10.1021/acsnano.4c04172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/08/2024]
Abstract
As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/AlxGa1-xAs/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semiempirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2-3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method enables the development of advanced heterostructure schemes for a more effective utilization of the nanowire platform; moreover, it is considered expandable to other material systems and nanostructure types.
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Affiliation(s)
- Donovan Hilliard
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - Tina Tauchnitz
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Isaak Vasileiadis
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Athanasios Gkotinakos
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - George Dimitrakopulos
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Philomela Komninou
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Xiaoxiao Sun
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Stephan Winnerl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
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Modeling the Radial Growth of Self-Catalyzed III-V Nanowires. NANOMATERIALS 2022; 12:nano12101698. [PMID: 35630920 PMCID: PMC9142916 DOI: 10.3390/nano12101698] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Revised: 05/11/2022] [Accepted: 05/15/2022] [Indexed: 11/16/2022]
Abstract
A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.
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Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates. NANOMATERIALS 2021; 11:nano11081949. [PMID: 34443778 PMCID: PMC8400893 DOI: 10.3390/nano11081949] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2021] [Revised: 07/14/2021] [Accepted: 07/26/2021] [Indexed: 12/16/2022]
Abstract
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
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Viazmitinov DV, Berdnikov Y, Kadkhodazadeh S, Dragunova A, Sibirev N, Kryzhanovskaya N, Radko I, Huck A, Yvind K, Semenova E. Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth. NANOSCALE 2020; 12:23780-23788. [PMID: 33232429 DOI: 10.1039/d0nr05779g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V materials into Si platforms and opens up new opportunities in active Si photonics.
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Wilson DP, Sokolovskii AS, LaPierre RR, Panciera F, Glas F, Dubrovskii VG. Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires. NANOTECHNOLOGY 2020; 31:485602. [PMID: 32931461 DOI: 10.1088/1361-6528/abb106] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V NWs in terms of the time-dependent (or length-dependent) contact angle or top nanowire radius under varying material fluxes. The model fits quite well the contact angle dynamics obtained by in situ growth monitoring of self-catalyzed GaAs NWs in a transmission electron microscope. These results can be used for modeling the interface dynamics and the related crystal phase switching and for obtaining ZB-WZ heterostructures in III-V.
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Affiliation(s)
- D P Wilson
- Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton ON L8S 4L7, Canada. ITMO University, Kronverkskiy pr. 49, 197101, St. Petersburg, Russia
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Berdnikov Y, Ilkiv I, Sibirev N, Ubyivovk E, Bouravleuv A. Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon. NANOTECHNOLOGY 2020; 31:374005. [PMID: 32460266 DOI: 10.1088/1361-6528/ab96e1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present a comparative study of GaAs nanowire growth on Si(111) substrates by molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our approach allows the synthesis of nanowires with different catalyst materials in separate sectors of the same substrate within the same epitaxial process. We match the experimental results to the modeling of chemical potentials and nanowire length distributions to analyze the impact of silicon incorporation into the catalyst droplets on the growth rates and size homogeneity in ensembles of Au- and Ag-catalyzed GaAs nanowires.
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Affiliation(s)
- Yury Berdnikov
- ITMO University, Kronverkskiy 49, St. Petersburg, 197101 Russia
| | - Igor Ilkiv
- St. Petersburg Academic University, Khlopina 8/3, St. Petersburg, 194021 Russia
- St. Petersburg State University, Universitetskaya emb. 7/9, St. Petersburg, 199034 Russia
| | - Nickolay Sibirev
- St. Petersburg State University, Universitetskaya emb. 7/9, St. Petersburg, 199034 Russia
| | - Evgeniy Ubyivovk
- ITMO University, Kronverkskiy 49, St. Petersburg, 197101 Russia
- St. Petersburg State University, Universitetskaya emb. 7/9, St. Petersburg, 199034 Russia
| | - Alexei Bouravleuv
- St. Petersburg Academic University, Khlopina 8/3, St. Petersburg, 194021 Russia
- St. Petersburg Electrotechnical University, Prof. Popova 5, St. Petersburg, 197376 Russia
- Institute for Analytical Instrumentation RAS, Ivana Chernykh 31-33, St. Petersburg, 198095 Russia
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Dubrovskii VG, Barcus J, Kim W, Vukajlovic-Plestina J, I Morral AF. Does desorption affect the length distributions of nanowires? NANOTECHNOLOGY 2019; 30:475604. [PMID: 31416057 DOI: 10.1088/1361-6528/ab3bb6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric length distribution. We demonstrate here the effect of desorption of the nanowire material, which has not been considered so far in studies of the nanowire length distributions. We show that at the very beginning of growth the length distribution should be asymmetric due to the slow nucleation of nanowires. At longer times, the length distribution acquires a symmetric Gaussian shape due to the increased weight of desorption. The width of this distribution is larger than Poissonian and increases for higher ratio of desorption over deposition rate. Our model is consistent with the length evolution of organized self-catalyzed GaAs nanowires. We outline that desorption of the nanowire material should be minimized to achieve arrays of highly identical nanowires. These results are relevant for a wide variety of material systems.
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Affiliation(s)
- V G Dubrovskii
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
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Lang D, Balaghi L, Winnerl S, Schneider H, Hübner R, Kehr SC, Eng LM, Helm M, Dimakis E, Pashkin A. Nonlinear plasmonic response of doped nanowires observed by infrared nanospectroscopy. NANOTECHNOLOGY 2019; 30:084003. [PMID: 30523880 DOI: 10.1088/1361-6528/aaf5a7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report a strong shift of the plasma resonance in highly-doped GaAs/InGaAs core/shell nanowires (NWs) for intense infrared excitation observed by scattering-type scanning near-field infrared microscopy. The studied NWs show a sharp plasma resonance at a photon energy of about 125 meV in the case of continuous wave excitation by a CO2 laser. Probing the same NWs with the pulsed free-electron laser with peak electric field strengths up to several 10 kV cm-1 reveals a power-dependent redshift to about 95 meV and broadening of the plasmonic resonance. We assign this effect to a substantial heating of the electrons in the conduction band and subsequent increase of the effective mass in the nonparabolic Γ-valley.
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Affiliation(s)
- Denny Lang
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany. Technische Universität Dresden, Institute of Applied Physics, Dresden, Germany
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Dubrovskii VG. Analytic form of the size distribution in irreversible growth of nanoparticles. Phys Rev E 2019; 99:012105. [PMID: 30780295 DOI: 10.1103/physreve.99.012105] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2018] [Indexed: 11/07/2022]
Abstract
We study theoretically the size distributions of nanoparticles (surface islands, droplets, molecular chains, and semiconductor nanowires) which grow without decay and with arbitrary size and time-dependent growth rates. Using a special transformation of variables, the analytic Green's function is obtained in the form of a Gaussian the variance of which is determined by the size dependence of the growth rate k(s). In the case of the power-law growth rates k(s)=(a+s)^{α}, the explicit formulas for the expectation and variance are given that contain earlier results in the limiting regimes. In the case of heterogeneous nucleation in a closed system, by convoluting Green's function with the exponential nucleation rate, we find an analytic size distribution which takes into account a delay in forming the smallest dimer and shows how it affects the distribution shapes. The recently discovered sub-Poissonian narrowing of the size distribution by nucleation antibunching is also included in the treatment. We briefly consider the length distribution of vapor-liquid-solid nanowires in the context of the obtained results. Overall, simple analytic size distributions obtained here under rather general assumptions may be useful for understanding and modeling statistical properties of different growth systems.
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