Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-κ passivation and Schottky barrier height

Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs

1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, the velocity saturation (VS) effect can result in the reduction of 1/f noise at high longitudinal electric fields. A new physics-based compact model has been for the first time introduced for single- to few-layer 2D-FETs in this study, precisely validating 1/f noise experiments for various types of devices. The proposed model mainly accounts for the measured 1/f noise bias dependence as the latter is defined by different physical mechanisms. Thus, analytical expressions are derived, valid in all regions of operation in contrast to conventional approaches available in the literature so far, accounting for carrier number fluctuation (ΔN), mobility fluctuation (Δμ) and contact resistance (ΔR) effects based on the underlying physics that rules these devices. The ΔN mechanism due to trapping/detrapping together with an intense Coulomb scattering effect dominates the 1/f noise from the medium to the strong accumulation region while Δμ has also been demonstrated to modestly contribute in the subthreshold region. ΔR can also be significant in a very high carrier density. The VS induced reduction of 1/f noise measurements at high electric fields was also remarkably captured by the model. The physical validity of the model can also assist in extracting credible conclusions when conducting comparisons between experimental data from devices with different materials or dielectrics.

A review of design approaches for the implementation of low-frequency noise measurement systems

Electronic noise has its roots in the fundamental physical interactions between matter and charged particles, carrying information about the phenomena that occur at the microscopic level. Therefore, Low-Frequency Noise Measurements (LFNM) are a well-established technique for the characterization of electron devices and materials and, compared to other techniques, they offer the advantage of being non-destructive and of providing a more detailed view of what happens in the matter during the manifestation of physical or chemical phenomena. For this reason, LFNM acquire particular importance in the modern technological era in which the introduction of new advanced materials requires in-depth and thorough characterization of the conduction phenomena. LFNM also find application in the field of sensors, as they allow to obtain more selective sensing systems even starting from conventional sensors. Performing meaningful noise measurements, however, requires that the background noise introduced by the measurement chain be much smaller than the noise to be detected and the instrumentation available on the market does not always meet the specifications required for reaching the ultimate sensitivity. Researchers willing to perform LFNM must often resort to the design of dedicated instrumentation in their own laboratories, but their cultural background does not necessarily include the ability to design, build, and test dedicated low noise instrumentation. In this review, we have tried to provide as much theoretical and practical guidelines as possible, so that even researchers with a limited background in electronic engineering can find useful information in developing or customizing low noise instrumentation.

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La2O3/Al2O3 nanolaminates on MoS2 using different oxidants (H2O and O3) was investigated. To improve the deposition, the effects of ultraviolet ozone treatment on MoS2 surface are also evaluated. It is found that the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates change greatly for different oxidants and treatment processes. These changes are found to be associated with the residual of metal carbide caused by the insufficient interface reactions. Ultraviolet ozone pretreatment can substantially improve the initial growth of sub-5 nm H2O-based or O3-based La2O3/Al2O3 nanolaminates, resulting in a reduction of residual metal carbide. All results indicate that O3-based La2O3/Al2O3 nanolaminates on MoS2 with ultraviolet ozone treatment yielded good electrical performance with low leakage current and no leakage dot, revealing a straightforward approach for realizing sub-5 nm uniform La2O3/Al2O3 nanolaminates on MoS2.