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Yan N, Qiu Y, He X, Tang X, Hao Q, Chen M. Plasmonic Enhanced Nanocrystal Infrared Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:3216. [PMID: 37110051 PMCID: PMC10146273 DOI: 10.3390/ma16083216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 04/13/2023] [Accepted: 04/17/2023] [Indexed: 06/19/2023]
Abstract
Low-dimensional nanomaterials are widely investigated in infrared photodetectors (PDs) due to their excellent optical and electrical properties. To further improve the PDs property like quantum efficiency, metallic microstructures are commonly used, which could squeeze light into sub-diffraction volumes for enhanced absorption through surface plasma exciton resonance effects. In recent years, plasmonic enhanced nanocrystal infrared PDs have shown excellent performance and attracted much research interest. In this paper, we summarize the progress in plasmonic enhanced nanocrystal infrared PDs based on different metallic structures. We also discuss challenges and prospects in this field.
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Affiliation(s)
- Naiquan Yan
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Yanyan Qiu
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Xubing He
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
- School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. MATERIALS 2020; 13:ma13061400. [PMID: 32204482 PMCID: PMC7142779 DOI: 10.3390/ma13061400] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/14/2020] [Accepted: 03/17/2020] [Indexed: 12/13/2022]
Abstract
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
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Ren D, Rong Z, Kim H, Turan D, Huffaker DL. High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays. OPTICS LETTERS 2019; 44:4666-4669. [PMID: 31568412 DOI: 10.1364/ol.44.004666] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Accepted: 08/24/2019] [Indexed: 06/10/2023]
Abstract
There has been a growing interest in developing high-efficiency ultrafast optical-to-electrical converters for advanced imaging and sensing applications. Here, we propose a three-dimensional (3D) plasmonic platform based on InAs nanowire arrays with self-assembled gold gratings, which converts a telecom-wavelength (1550 nm) optical beam to sub-picosecond current pulses with quantum efficiency up to 18.3%, while operating in photovoltaic mode, i.e., at zero bias. Using a comprehensive 3D photoresponse model, we reveal that the incident photons form tightly confined fields near the gratings at nanowire tips, and thus a majority of the photogenerated carriers are efficiently routed to the metal within a few tens of nanometers distance, resulting in ultrafast current pulses. In addition, we show that the amplitude of current pulses is robust to the nanowire surface quality and can be effectively tuned by varying the doping levels in nanowires. This work paves a way to realizing a low-power, highly compact, and low-cost device scheme for ultrafast pulse generation.
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 79] [Impact Index Per Article: 15.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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Ren D, Azizur-Rahman KM, Rong Z, Juang BC, Somasundaram S, Shahili M, Farrell AC, Williams BS, Huffaker DL. Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al 2O 3 Passivation. NANO LETTERS 2019; 19:2793-2802. [PMID: 30676752 DOI: 10.1021/acs.nanolett.8b04420] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photodetectors at MWIR composed of vertical selective-area InAsSb nanowire photoabsorber arrays on large bandgap InP substrate with nanoscale plasmonic gratings. We accomplish this by significantly suppressing the nonradiative recombination at the InAsSb nanowire surfaces by introducing ex situ conformal Al2O3 passivation shells. Transient simulations estimate an extremely low surface recombination velocity on the order of 103 cm/s. We further achieve room-temperature photoluminescence emission from InAsSb nanowires, spanning the entire MWIR regime from 3 to 5 μm. A dry-etching process is developed to expose only the top nanowire facets for metal contacts, with the sidewalls conformally covered by Al2O3 shells, allowing for a higher internal quantum efficiency. Based on these techniques, we fabricate nanowire photodetectors with an optimized pitch and diameter and demonstrate room-temperature spectral response with MWIR detection signatures up to 3.4 μm. The results of this work indicate that uncooled focal plane arrays at MWIR on low-cost InP substrates can be designed with nanostructured absorbers for highly compact and fully integrated detection platforms.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Khalifa M Azizur-Rahman
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Zixuan Rong
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Bor-Chau Juang
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Siddharth Somasundaram
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Mohammad Shahili
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Alan C Farrell
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Benjamin S Williams
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Diana L Huffaker
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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Huang B, Gao S, Liu Y, Wang J, Liu Z, Guo Y, Lu W. Nano-antenna enhanced waveguide integrated light source based on an MIS tunnel junction. OPTICS LETTERS 2019; 44:2330-2333. [PMID: 31042215 DOI: 10.1364/ol.44.002330] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Accepted: 03/30/2019] [Indexed: 06/09/2023]
Abstract
Ultrafast electro-optical conversion at nanoscale is of fundamental interest for information transfer and optical interconnects. Light emission from a quantum tunnel junction provides an opportunity owing to its unique capability of ultrafast response and small footprint. However, the main challenge to the wide adoption of the tunnel junction is its low emission efficiency caused by the low inelastic electron tunneling proportion and radiation efficiency. In this Letter, an electrically driven silicon light source with its efficiency enhanced by using a nano-antenna in a metal-insulator-semiconductor junction is proposed. Strong plasmon confinement in the nano-antenna provides large local density of optical states and bridges the wave vector mismatch between nanoscale volume field confinement and far-field radiation. Two orders of magnitude of emission enhancement are achieved over typical planar MIS junctions.
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Ren D, Meng X, Rong Z, Cao M, Farrell AC, Somasundaram S, Azizur-Rahman KM, Williams BS, Huffaker DL. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions. NANO LETTERS 2018; 18:7901-7908. [PMID: 30444964 DOI: 10.1021/acs.nanolett.8b03775] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays on InP substrates, forming InAs-InP heterojunctions. We measure a rectification ratio greater than 300 at room temperature, which indicates a desirable diode performance. The dark current density, normalized to the area of nanowire heterojunctions, is 130 mA/cm2 at a temperature of 300 K and a reverse bias of 0.5 V, making it comparable to the state-of-the-art bulk InAs p- i- n photodiodes. An analysis of the Arrhenius plot of the dark current at reverse bias yields an activation energy of 175 meV from 190 to 300 K, suggesting that the Shockley-Read-Hall (SRH) nonradiative current is the primary contributor to the dark current. By using three-dimensional electrical simulations, we determine that the SRH nonradiative current originates from the acceptor-like surface traps at the nanowire-passivation heterointerfaces. The spectral response at room temperature is also measured, with a clear photodetection signature observed at wavelengths up to 2.5 μm. This study provides an understanding of dark current for small band gap selective-area nanowires and paves the way to integrate these improved nanostructured photoabsorbers on large band gap substrates for high-performance photodetectors at SWIR.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiao Meng
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Zixuan Rong
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Minh Cao
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Alan C Farrell
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Siddharth Somasundaram
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Khalifa M Azizur-Rahman
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Benjamin S Williams
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Diana L Huffaker
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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