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Li H, Li D, Chen H, Yue X, Fan K, Dong L, Wang G. Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity. SENSORS (BASEL, SWITZERLAND) 2023; 23:6808. [PMID: 37571591 PMCID: PMC10422280 DOI: 10.3390/s23156808] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 07/12/2023] [Accepted: 07/25/2023] [Indexed: 08/13/2023]
Abstract
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs.
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Affiliation(s)
- Huiping Li
- Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Dujuan Li
- Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Huiyi Chen
- Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Xiaojie Yue
- The Children’s Hospital of Zhejiang University School of Medicine, Hangzhou 310052, China
| | - Kai Fan
- School of Automation, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Linxi Dong
- Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Gaofeng Wang
- Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China
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Zhang H, Qiu Y, Osawa F, Itabashi M, Ohshima N, Kajisa T, Sakata T, Izumi T, Sone H. Estimation of the Depletion Layer Thickness in Silicon Nanowire-Based Biosensors from Attomolar-Level Biomolecular Detection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19892-19903. [PMID: 37046176 DOI: 10.1021/acsami.3c00202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Silicon nanowire (SiNW) biosensors have attracted a lot of attention due to their superior sensitivity. Recently, the dependence of biomolecule detection sensitivity on the nanowire (NW) width, number, and doping density has been partially investigated. However, the primary reason for achieving ultrahigh sensitivity has not been elucidated thus far. In this study, we designed and fabricated SiNW biosensors with different widths (10.8-155 nm) by integrating a complementary metal-oxide-semiconductor process and electron beam lithography. We aimed to investigate the detection limit of SiNW biosensors and reveal the critical effect of the 10-nm-scaled SiNW width on the detection sensitivity. The sensing performance was evaluated by detecting antiovalbumin immunoglobulin G (IgG) with various concentrations (from 6 aM to 600 nM). The initial thickness of the depletion region of the SiNW and the changes in the depletion region due to biomolecule binding were calculated. The basis of this calculation are the resistance change ratios as functions of IgG concentrations using SiNWs with different widths. The calculation results reveal that the proportion of the depletion region over the entire SiNW channel is the essential reason for high-sensitivity detection. Therefore, this study is crucial for an indepth understanding on how to maximize the sensitivity of SiNW biosensors.
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Affiliation(s)
- Hui Zhang
- Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-Cho, Kiryu, Gunma 376-8515, Japan
| | - Yawei Qiu
- Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-Cho, Kiryu, Gunma 376-8515, Japan
| | - Fumiya Osawa
- Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-Cho, Kiryu, Gunma 376-8515, Japan
| | - Meiko Itabashi
- Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-Cho, Kiryu, Gunma 376-8515, Japan
| | - Noriyasu Ohshima
- Graduate School of Medicine, Gunma University, 3-39-22, Showa-machi, Maebashi, Gunma 371-8511, Japan
| | - Taira Kajisa
- Graduate School of Interdisciplinary New Science, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan
| | - Toshiya Sakata
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8656, Japan
| | - Takashi Izumi
- Graduate School of Medicine, Gunma University, 3-39-22, Showa-machi, Maebashi, Gunma 371-8511, Japan
- Faculty of Health Care, Teikyo Heisei University, 2-51-4, Higashiikebukuro, Toshima-Ku, Tokyo 170-8445, Japan
| | - Hayato Sone
- Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-Cho, Kiryu, Gunma 376-8515, Japan
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Adam T, Dhahi TS, Gopinath SCB, Hashim U. Novel Approaches in Fabrication and Integration of Nanowire for Micro/Nano Systems. Crit Rev Anal Chem 2022; 52:1913-1929. [DOI: 10.1080/10408347.2021.1925523] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Tijjani Adam
- Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis, Perlis, Malaysia
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia
| | | | - Subash C. B. Gopinath
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia
- Faculty of Chemical Engineering Technology, Universiti Malaysia Perlis, Perlis, Malaysia
| | - Uda Hashim
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis, Malaysia
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Tintelott M, Pachauri V, Ingebrandt S, Vu XT. Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays. SENSORS (BASEL, SWITZERLAND) 2021; 21:5153. [PMID: 34372390 PMCID: PMC8347659 DOI: 10.3390/s21155153] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Revised: 07/27/2021] [Accepted: 07/27/2021] [Indexed: 12/31/2022]
Abstract
Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. "Bottom-up" or "top-down" approaches that are used for the fabrication of SiNW-FET sensors have their respective limitations in terms of technology development. The "bottom-up" approach allows the synthesis of silicon nanowires (SiNW) in the range from a few nm to hundreds of nm in diameter. However, it is technologically challenging to realize reproducible bottom-up devices on a large scale for clinical biosensing applications. The top-down approach involves state-of-the-art lithography and nanofabrication techniques to cast SiNW down to a few 10s of nanometers in diameter out of high-quality Silicon-on-Insulator (SOI) wafers in a controlled environment, enabling the large-scale fabrication of sensors for a myriad of applications. The possibility of their wafer-scale integration in standard semiconductor processes makes SiNW-FETs one of the most promising candidates for the next generation of biosensor platforms for applications in healthcare and medicine. Although advanced fabrication techniques are employed for fabricating SiNW, the sensor-to-sensor variation in the fabrication processes is one of the limiting factors for a large-scale production towards commercial applications. To provide a detailed overview of the technical aspects responsible for this sensor-to-sensor variation, we critically review and discuss the fundamental aspects that could lead to such a sensor-to-sensor variation, focusing on fabrication parameters and processes described in the state-of-the-art literature. Furthermore, we discuss the impact of functionalization aspects, surface modification, and system integration of the SiNW-FET biosensors on post-fabrication-induced sensor-to-sensor variations for biosensing experiments.
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Affiliation(s)
| | | | | | - Xuan Thang Vu
- Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany; (M.T.); (V.P.); (S.I.)
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Vallejo-Perez M, Ternon C, Spinelli N, Morisot F, Theodorou C, Jayakumar G, Hellström PE, Mouis M, Rapenne L, Mescot X, Salem B, Stambouli V. Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection. NANOMATERIALS 2020; 10:nano10091842. [PMID: 32942692 PMCID: PMC7559082 DOI: 10.3390/nano10091842] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2020] [Revised: 09/07/2020] [Accepted: 09/09/2020] [Indexed: 02/07/2023]
Abstract
Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA-15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electrical properties of the Si NN-FETs was studied. First, the results that were obtained for the optimization of the (3-Glycidyloxypropyl)trimethoxysilane (GOPS)-based biofunctionalization process by using UV radiation are reported. The biofunctionalized devices were analyzed by atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM), proving that TBA-15 probes were properly grafted on the surface of the devices, and by means of epifluorescence microscopy it was possible to demonstrate that the UV-assisted GOPS-based functionalization notably improves the homogeneity of the surface DNA distribution. Later, the electrical characteristics of 80 devices were analyzed before and after the biofunctionalization process, indicating that the results are highly dependent on the experimental protocol. We found that the TBA-15 hybridization capacity with its complementary strand is time dependent and that the transfer characteristics of the Si NN-FETs obtained after the TBA-15 probe grafting are also time dependent. These results help to elucidate and define the experimental precautions that must be taken into account to fabricate reproducible devices.
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Affiliation(s)
- Monica Vallejo-Perez
- University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (M.V.-P.); (F.M.); (L.R.)
- University Grenoble Alpes, CNRS, DCM UMR 5250, F-38000 Grenoble, France;
| | - Céline Ternon
- University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (M.V.-P.); (F.M.); (L.R.)
- Correspondence: (C.T.); (V.S.)
| | - Nicolas Spinelli
- University Grenoble Alpes, CNRS, DCM UMR 5250, F-38000 Grenoble, France;
| | - Fanny Morisot
- University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (M.V.-P.); (F.M.); (L.R.)
- University Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, France; (C.T.); (M.M.); (X.M.)
| | - Christoforos Theodorou
- University Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, France; (C.T.); (M.M.); (X.M.)
| | - Ganesh Jayakumar
- KTH Royal Institute of Technology, Department of Electronics, School of Electrical Engineering and Computer Science, Electrum 229, SE-164 40 Kista, Sweden; (G.J.); (P.-E.H.)
| | - Per-Erik Hellström
- KTH Royal Institute of Technology, Department of Electronics, School of Electrical Engineering and Computer Science, Electrum 229, SE-164 40 Kista, Sweden; (G.J.); (P.-E.H.)
| | - Mireille Mouis
- University Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, France; (C.T.); (M.M.); (X.M.)
| | - Laetitia Rapenne
- University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (M.V.-P.); (F.M.); (L.R.)
| | - Xavier Mescot
- University Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, France; (C.T.); (M.M.); (X.M.)
| | - Bassem Salem
- University Grenoble Alpes, CNRS, CEA/LETI Minatec, Grenoble INP, LTM, F-38054 Grenoble, France;
| | - Valérie Stambouli
- University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (M.V.-P.); (F.M.); (L.R.)
- Correspondence: (C.T.); (V.S.)
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Chen S, Sun Y, Xia Y, Lv K, Man B, Yang C. Donor effect dominated molybdenum disulfide/graphene nanostructure-based field-effect transistor for ultrasensitive DNA detection. Biosens Bioelectron 2020; 156:112128. [DOI: 10.1016/j.bios.2020.112128] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2019] [Revised: 02/25/2020] [Accepted: 02/27/2020] [Indexed: 02/08/2023]
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