The origin of negative charging in amorphous Al2O3 films: the role of native defects

On the Structure of Oxygen Deficient Amorphous Oxide Films

Understanding defects in amorphous oxide films and heterostructures is vital to improving performance of microelectronic devices, thin-film transistors, and electrocatalysis. However, to what extent the structure and properties of point defects in amorphous solids are similar to those in the crystalline phase are still debated. The validity of this analogy and the experimental and theoretical evidence of the effects of oxygen deficiency in amorphous oxide films are critically discussed. The authors start with the meaning and significance of defect models, such as "oxygen vacancy" in crystalline oxides, and then introduce experimental and computational methods used to study intrinsic defects in amorphous oxides and discuss their limitations and challenges. To test the validity of existing defect models, ab initio molecular dynamics is used with a non-local density functional to model the structure and electronic properties of oxygen-deficient amorphous alumina. Unlike some previous studies, the formation of deep defect states in the bandgap caused by the oxygen deficiency is found. Apart from atomistic structures analogous to crystal vacancies, the formation of more stable defect states characterized by the bond formation between under-coordinated Al ions is shown. The limitations of such defect models and how they may be overcome in simulations are discussed.

Observation of Rich Defect Dynamics in Monolayer MoS2

Defects play a pivotal role in limiting the performance and reliability of nanoscale devices. Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors such as monolayer MoS₂ are no exception. Probing defect dynamics in 2D FETs is therefore of significant interest. Here, we present a comprehensive insight into various defect dynamics observed in monolayer MoS₂ FETs at varying gate biases and temperatures. The measured source-to-drain currents exhibit random telegraph signals (RTS) owing to the transfer of charges between the semiconducting channel and individual defects. Based on the modeled temperature and gate bias dependence, oxygen vacancies or aluminum interstitials are probable defect candidates. Several types of RTSs are observed including anomalous RTS and giant RTS indicating local current crowding effects and rich defect dynamics in monolayer MoS₂ FETs. This study explores defect dynamics in large area-grown monolayer MoS₂ with ALD-grown Al₂O₃ as the gate dielectric.

Review: understanding the properties of amorphous materials with high-performance computing methods

Amorphous materials have no long-range order in their atomic structure. This makes much of the formalism for the study of crystalline materials irrelevant, and so elucidating their structure and properties is challenging. The use of computational methods is a powerful complement to experimental studies, and in this paper we review the use of high-performance computing methods in the simulation of amorphous materials. Five case studies are presented to showcase the wide range of materials and computational methods available to practitioners in this field. This article is part of a discussion meeting issue 'Supercomputing simulations of advanced materials'.

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation

2D materials with atomic thickness display strong gate controllability and emerge as promising materials to build area-efficient electronic circuits. However, achieving the effective and nondestructive modulation of carrier density/type in 2D materials is still challenging because the introduction of dopants will greatly degrade the carrier transport via Coulomb scattering. Here, a strategy to control the polarity of tungsten diselenide (WSe₂ ) field-effect transistors (FETs) via introducing hexagonal boron nitride (h-BN) as the interfacial dielectric layer is devised. By modulating the h-BN thickness, the carrier type of WSe₂ FETs has been switched from hole to electron. The ultrathin body of WSe₂ , combined with the effective polarity control, together contribute to the versatile single-transistor logic gates, including NOR, AND, and XNOR gates, and the operation of only two transistors as a half adder in logic circuits. Compared with the use of 12 transistors based on static Si CMOS technology, the transistor number of the half adder is reduced by 83.3%. The unique carrier modulation approach has general applicability toward 2D logic gates and circuits for the improvement of area efficiency in logic computation.

Synaptic Resistor Circuits Based on Al Oxide and Ti Silicide for Concurrent Learning and Signal Processing in Artificial Intelligence Systems

Neurobiological circuits containing synapses can process signals while learning concurrently in real time. Before an artificial neural network (ANN) can execute a signal-processing program, it must first be programmed by humans or trained with respect to a large and defined data set during learning processes, resulting in significant latency, high power consumption, and poor adaptability to unpredictable changing environments. In this work, a crossbar circuit of synaptic resistors (synstors) is reported, each synstor integrating a Si channel with an Al oxide memory layer and Ti silicide Schottky contacts. Individual synstors are characterized and analyzed to understand their concurrent signal-processing and learning abilities. Without any prior training, synstor circuits concurrently execute signal processing and learning in real time to fly drones toward a target position in an aerodynamically changing environment faster than human controllers, and with learning speed, performance, power consumption, and adaptability to the environment significantly superior to an ANN running on computers. The synstor circuit provides a path to establish power-efficient intelligent systems with real-time learning and adaptability in the capriciously mutable real world.

Atomic-Layer-Deposited Aluminum Oxide Thin Films Probed with X-ray Scattering and Compared to Molecular Dynamics and Density Functional Theory Models

A better understanding of amorphous aluminum oxide's structure and electronic properties is obtained through combined experimental and computational approaches. Grazing incidence X-ray scattering measurements were carried out on aluminum oxide thin films grown using thermal atomic layer deposition. The corresponding pair distribution functions (PDFs) showed structures similar to previously reported PDFs of solid-state amorphous alumina and molten alumina. Structural models based on crystalline alumina polymorphs (PDFgui) and amorphous alumina (molecular dynamics, MD) were examined for structural comparisons to the experimental PDF data. Smaller MD models were optimized and verified against larger models to allow for quantum chemical electronic structure calculations. The electronic structure of the amorphous alumina models yields additional insight into the band structure and electronic defects present in amorphous alumina that are not present in crystalline samples.

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation. Here, we show that device stability in graphene-based field-effect transistors with amorphous gate oxides can be improved by Fermi-level tuning. We deliberately tune the Fermi level of the channel to maximize the energy distance between the charge carriers in the channel and the defect bands in the amorphous aluminium gate oxide. Charge trapping is highly sensitive to the energetic alignment of the Fermi level of the channel with the defect band in the insulator, and thus, our approach minimizes the amount of electrically active border traps without the need to reduce the total number of traps in the insulator.

Plasma and magnetron sputtering constructed dual-functional polysulfides barrier separator for high-performance lithium-sulfur batteries

In order to fundamentally suppress the shuttle effect, N₂ Plasma & Al₂O₃ magnetron sputtered separators (Al₂O₃@N-PP) are proposed for lithium-sulfur batteries (LSBs). Such a dual-functional polysulfides (LiPSs) barrier separator greatly inhibits the shuttle effect from the perspective of physical and chemical interaction. Physically, the inherently electronegative amorphous Al₂O₃ first achieves the repulsion of LiPSs to the sulfur cathode through the electrostatic repulsive effect, effectively preventing a large amount of soluble LiPSs from accumulating at the separator. At the same time, the Al₂O₃ film seals the shuttle channel of LiPSs to a certain extent. Chemically, N₂ plasma-doped N heteroatoms form a lithium bond with Li⁺ in LiPSs to achieve the first step chemical adsorption and anchoring of LiPSs. When the LiPSs reaches the amorphous Al₂O₃ film, more stable chemical bonds are formed between Al³⁺ and S^2-, Li⁺ and O^2- to achieve more effective adsorption and anchoring of LiPSs. At 1C with a high sulfur loading up to 3-5 mg cm^-2 the LSB contributes a specific charge capacity of 717.4 mAh g^-1, with high retention rate up to 75.49 % after 450 cycles. The U-shaped electrolytic cell experiment and ultraviolet-visible spectrum experiment confirmed the LiPSs barrier function of the functional separator.

STEM-EELS investigation of c-Si/a-AlOx interface for solar cell applications

In this article, STEM-EELS methodology is described to investigate the composition of sensitive crystalline Silicon/amorphous aluminum oxide (c-Si/a-AlOx) interface of an a AlOx/amorphous hydrogenated silicon nitride (a-AlOx/a-SiNx:H) passivation stack of a c-Si solar cell. In this stack, a-AlOx has the distinctive characteristic to provide both chemical and field effect passivation, which need further research to be more controlled in order to improve solar cell efficiency. a-AlOx is known to be unstable under the electron-beam, so we first present a detailed study on the electron-beam radiation damage to c-Si/a-AlOx interface. This interface can indeed undergo several electron-beam irradiation damage like sputtering, knock-on or radiolysis if precautions are not taken. Radiolysis damage has been found to be the dominant radiation damage. Thus, several STEM-EELS acquisition parameters like acceleration voltage, electron dose and scan orientation were taken into account and modified to limit this radiolysis damage. Once the irradiation was limited, STEM-EELS investigation was conduct using DualEELS on the Si and Al L2,3 and OK edge fines structures. The interface was found to be composed of a-SiOx and non-stoichiometric aluminum silicate with a predominance of tetrahedrally coordinated Al in its first layer.

High Current Density in Monolayer MoS2 Doped by AlOx

Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low-temperature (<200 °C) substoichiometric AlO_x provides a stable n-doping layer for monolayer MoS₂, compatible with circuit integration. This approach achieves carrier densities >2 × 10¹³ cm^-2, sheet resistance as low as ∼7 kΩ/□, and good contact resistance ∼480 Ω·μm in transistors from monolayer MoS₂ grown by chemical vapor deposition. We also reach record current density of nearly 700 μA/μm (>110 MA/cm²) along this three-atom-thick semiconductor while preserving transistor on/off current ratio >10⁶. The maximum current is ultimately limited by self-heating (SH) and could exceed 1 mA/μm with better device heat sinking. With their 0.1 nA/μm off-current, such doped MoS₂ devices approach several low-power transistor metrics required by the international technology roadmap.

Pt-Amorphous Barium Aluminum Oxide/Carbon Catalysts for an Enhanced Methanol Electrooxidation Reaction

A new type of amorphous barium aluminum oxide was synthesized using a polyol thermal method involving a mixture with Vulcan XC-72 carbon and supported with 20%Pt catalysts to enhance the activity of a methanol electrooxidation reaction (MOR). The maximum current density, electrochemically active surface area (ECSA), and electrochemical impedance spectra (EIS) of the obtained catalysts for MOR were determined. The MORs of barium aluminum oxide with different calcination temperatures and Ba and Al contact ratios were studied. The MOR of the uncalcined amorphous Ba0.5AlOx catalysts prepared with a mole ratio of 2/1 Ba/Al mixed with Vulcan XC-72 carbon and supported with 20%Pt catalyst (Pt-Ba0.5AlOx/C) was enhanced compared with that of 20%Pt-Al2O3/C and 20%Pt/C catalysts due to its obtained largest maximum current density of 3.89 mA/cm2 and the largest ECSA of 49.83 m2/g. Therefore, Pt-Ba0.5AlOx/C could provide a new pathway to achieve a sufficient electrical conductivity, and possible synergistic effects with other active components improved the catalytic activity and stability of the prepared catalyst in MOR.

Material-Selective Doping of 2D TMDC through AlxOy Encapsulation

For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one of the greatest challenges is the realization of doping and comprehension of its mechanisms. Low-temperature atomic layer deposition of aluminum oxide is found to n-dope MoS₂ and ReS₂ but not WS₂. Based on electrical, optical, and chemical analyses, we propose and validate a hypothesis to explain the doping mechanism. Doping is ascribed to donor states in the band gap of Al_xO_y, which donate electrons or not, based on the alignment of the electronic bands of the 2D TMDC. Through systematic experimental characterization, incorporation of impurities (e.g., carbon) is identified as the likely cause of such states. By modulating the carbon concentration in the capping oxide, doping can be controlled. Through systematic and comprehensive experimental analysis, this study correlates, for the first time, 2D TMDC doping to the carbon incorporation on dielectric encapsulation layers. We highlight the possibility to engineer dopant layers to control the material selectivity and doping concentration in 2D TMDC.