1
|
Wang L, Yang G, Jiang L, Ma Y, Liu D, Razal J, Lei W. Improved Photo-Excited Carriers Transportation of WS 2 -O-Doped-Graphene Heterostructures for Solar Steam Generation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2204898. [PMID: 36581491 DOI: 10.1002/smll.202204898] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 11/15/2022] [Indexed: 05/11/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides and graphene have revealed promising applications in optoelectronic and energy storage and conversion. However, there are rare reports of modifying the light-to-heat transformation via preparing their heterostructures for solar steam generation. In this work, commercial WS2 and sucrose are utilized as precursors to produce 2D WS2 -O-doped-graphene heterostructures (WS2 -O-graphene) for solar water evaporation. The WS2 -O-graphene evaporators demonstrate excellent average water evaporation rate (2.11 kg m-2 h-1 ) and energy efficiency (82.2%), which are 1.3- and 1.2-fold higher than WS2 and O-doped graphene-based evaporators, respectively. Furthermore, for the real seawater with different pH values (pH 1 and 12) and rhodamine B pollutants, the WS2 -O-graphene evaporators show great average evaporation rates (≈2.08 and 2.09 kg m-2 h-1 , respectively) for producing freshwater with an extremely low-grade of dye residual and nearly neutral pH values. More interestingly, due to the self-storage water ability of WS2 -O-graphene evaporators, water evaporation can be implemented without the presence of bulk water. As a result, the evaporation rate reaches 3.23 kg m-2 h-1 , which is ≈1.5 times higher than the regular solar water evaporation system. This work provides a new approach for preparing 2D transition metal dichalcogenides and graphene heterostructures for efficient solar water evaporation.
Collapse
Affiliation(s)
- Lifeng Wang
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| | - Guoliang Yang
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| | - Lu Jiang
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| | - Yuxi Ma
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| | - Dan Liu
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| | - Joselito Razal
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| | - Weiwei Lei
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Locked Bag 20000, Victoria, 3220, Australia
| |
Collapse
|
2
|
Ogawa S, Fukushima S, Shimatani M. Hexagonal Boron Nitride for Photonic Device Applications: A Review. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2005. [PMID: 36903116 PMCID: PMC10004243 DOI: 10.3390/ma16052005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Revised: 02/23/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN's bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions.
Collapse
|
3
|
Li Y, Wang X, Wang J, Wang X, Zeng D. A Simple Method for the Synthesis of a Coral-like Boron Nitride Micro-/Nanostructure Catalyzed by Fe. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:753. [PMID: 36839121 PMCID: PMC9959743 DOI: 10.3390/nano13040753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 02/11/2023] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Catalyzed by Fe, novel a coral-like boron nitride (BN) micro-/nanostructure was synthesized from B2O3 by a ball milling and annealing process. Observations of the morphology of the product indicated that the coral-like BN micro-/nanostructure consists of a bamboo-shaped nanotube stem and dense h-BN nanoflakes growing outward on the surface of the nanotube. Experimental results showed that the morphology of the BN nanotube was greatly dependent on the anneal process parameters. With the annealing time increasing from 0.5 h to 4 h, the morphology developed from smooth BN nanotubes, with a diameter size of around 100 nm, to rough, coral-like boron nitride with a large diameter of 3.6 μm. The formation mechanism of this coral-like BN micro-/nanostructure is a two-stage growth process: bamboo-shaped BN nanotubes are first generated through a vapor-liquid-solid (VLS) mechanism and then nanoflakes grow surrounding the surface of the nanotube. Acid pickling and a hydrolysis process were carried out to remove Fe, iron nitrogen and unreacted B2O3 impurities.
Collapse
Affiliation(s)
- Yanjiao Li
- Foundation Department, Rocket Force University of Engineering, Hongqing Town, Xi’an 710025, China
| | - Xueren Wang
- Zhijian Lab, Rocket Force University of Engineering, Hongqing Town, Xi’an 710025, China
| | - Jian Wang
- Beijing System Engineering Institute, Beijing 100101, China
| | - Xinfeng Wang
- Foundation Department, Rocket Force University of Engineering, Hongqing Town, Xi’an 710025, China
| | - Dejun Zeng
- School of Materials Science and Engineering, Chang’an University, Xi’an 710064, China
| |
Collapse
|
4
|
Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
Collapse
Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| |
Collapse
|
5
|
Shtansky DV, Matveev AT, Permyakova ES, Leybo DV, Konopatsky AS, Sorokin PB. Recent Progress in Fabrication and Application of BN Nanostructures and BN-Based Nanohybrids. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12162810. [PMID: 36014675 PMCID: PMC9416166 DOI: 10.3390/nano12162810] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 08/11/2022] [Accepted: 08/12/2022] [Indexed: 05/27/2023]
Abstract
Due to its unique physical, chemical, and mechanical properties, such as a low specific density, large specific surface area, excellent thermal stability, oxidation resistance, low friction, good dispersion stability, enhanced adsorbing capacity, large interlayer shear force, and wide bandgap, hexagonal boron nitride (h-BN) nanostructures are of great interest in many fields. These include, but are not limited to, (i) heterogeneous catalysts, (ii) promising nanocarriers for targeted drug delivery to tumor cells and nanoparticles containing therapeutic agents to fight bacterial and fungal infections, (iii) reinforcing phases in metal, ceramics, and polymer matrix composites, (iv) additives to liquid lubricants, (v) substrates for surface enhanced Raman spectroscopy, (vi) agents for boron neutron capture therapy, (vii) water purifiers, (viii) gas and biological sensors, and (ix) quantum dots, single photon emitters, and heterostructures for electronic, plasmonic, optical, optoelectronic, semiconductor, and magnetic devices. All of these areas are developing rapidly. Thus, the goal of this review is to analyze the critical mass of knowledge and the current state-of-the-art in the field of BN-based nanomaterial fabrication and application based on their amazing properties.
Collapse
|
6
|
Large-Scale Synthesis h-BN Films on Copper-Nickel Alloy by Atmospheric Pressure Chemical Vapor Deposition. CRYSTALS 2022. [DOI: 10.3390/cryst12070985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
Due to its high thermal and chemical stability, excellent dielectric properties, unique optical properties, corrosion resistance, and oxidation resistance, the two-dimensional hexagonal boron nitride (h-BN) is often used in a thermal conductor protective layer in deep ultraviolet light-emitting detector fields. However, due to the complicated growth conditions of h-BN, it is often necessary to prepare h-BN by the CVD method in a high vacuum environment, which is limited to a certain extent in terms of film size and production cost. In order to solve this problem, we proposed a method to prepare h-BN thin films by atmospheric CVD (APCVD). This method does not need a vacuum environment, which reduces energy consumption and cost, and makes the operation simpler and the experimental environment safer. The preparation of high-quality h-BN film was carried out using a Cu-Ni alloy as the growth substrate. The growth process of h-BN film was studied, and the influence of growth parameters on the structure of the h-BN film was explored. The morphological features and elemental composition pairs of the samples were characterized and analyzed, which confirmed that the high-quality h-BN film could be successfully grown on the Cu-Ni alloy substrate by APCVD. The UV detection device prepared by using the prepared h-BN film as the photoresponse material had good photoresponse characteristics and performance stability. It provides a new idea for the low-cost preparation of large-scale h-BN.
Collapse
|
7
|
Yang H, Wang G, Guo Y, Wang L, Tan B, Zhang S, Zhang X, Zhang J, Shuai Y, Lin J, Jia D, Hu P. Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs. NANOSCALE 2022; 14:4204-4215. [PMID: 35234771 DOI: 10.1039/d1nr06004j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.
Collapse
Affiliation(s)
- Huihui Yang
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Yanming Guo
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Australia
| | - Biying Tan
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Shichao Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Xin Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Jia Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| |
Collapse
|
8
|
Chen J, Wang G, Meng J, Cheng Y, Yin Z, Tian Y, Huang J, Zhang S, Wu J, Zhang X. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates. ACS APPLIED MATERIALS & INTERFACES 2022; 14:7004-7011. [PMID: 35080841 DOI: 10.1021/acsami.1c22626] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. However, it is still a great challenge to directly grow high-quality h-BN on dielectric substrates, and an extremely high substrate temperature or annealing is usually required. In this work, high-quality few-layer h-BN is directly grown on sapphire substrates via ion beam sputtering deposition at a relatively low temperature of 700 °C by introducing NH3 into the growth chamber. Such low growth temperature is attributed to the presence of abundant active N species, originating from the decomposition of NH3 under ion beam irradiation. To further tailor the properties of h-BN, carbon was introduced into the h-BN layer by simultaneously introducing CH4 and NH3 during the growth process, indicating the wide applicability of this approach. Moreover, a deep ultraviolet (DUV) photodetector is also fabricated from a C-doped h-BN layer and exhibits superior performance compared with an intrinsic h-BN device.
Collapse
Affiliation(s)
- Jingren Chen
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Gaokai Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Junhua Meng
- Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Yong Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yan Tian
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jidong Huang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Siyu Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jinliang Wu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Joint Lab of Digital Optical Chip, Wuyi University, Jiangmen 529020, P. R. China
| |
Collapse
|
9
|
Li H, Zhao R. Dissociation of ammonia borane and its subsequent nucleation on the Ru(0001) surface Revealed by density functional theoretical simulations. Phys Chem Chem Phys 2022; 24:12226-12235. [DOI: 10.1039/d1cp05957b] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Chemical vapor deposition (CVD) method is widely used in preparation of graphene, hexagonal boron nitride (h-BN) and other 2D materials. To improve the quality of h-BN, it is essential to...
Collapse
|
10
|
Li H, Zhu H, Zhao R. Revealing initial nucleation of hexagonal boron nitride on Ru(0001) and Rh(111) surfaces by density functional theory simulations. NEW J CHEM 2022. [DOI: 10.1039/d2nj01702d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The nucleation of h-BN on Ru(0001) and Rh(111) surfaces via an energy-driven process is systematically studied by density functional theory simulations.
Collapse
Affiliation(s)
- Huanhuan Li
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
| | - Hongxia Zhu
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
| | - Ruiqi Zhao
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
| |
Collapse
|
11
|
Zhu H, Zhao R. Isolated Ni atoms induced edge stabilities and equilibrium shapes of CVD-prepared hexagonal boron nitride on the Ni(111) surface. NEW J CHEM 2022. [DOI: 10.1039/d2nj03735a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The edge stability and equilibrium shape of h-BN passivated by isolated Ni atoms are revealed by density functional theory simulations.
Collapse
Affiliation(s)
- Hongxia Zhu
- School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
| | - Ruiqi Zhao
- School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
| |
Collapse
|
12
|
Han Z, Li L, Jiao F, Yu G, Wei Z, Geng D, Hu W. Continuous orientated growth of scaled single-crystal 2D monolayer films. NANOSCALE ADVANCES 2021; 3:6545-6567. [PMID: 36132651 PMCID: PMC9418785 DOI: 10.1039/d1na00545f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Accepted: 10/03/2021] [Indexed: 06/16/2023]
Abstract
Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.
Collapse
Affiliation(s)
- Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Lin Li
- Institute of Molecular Plus Tianjin 300072 P. R. China
| | - Fei Jiao
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| |
Collapse
|
13
|
Li L, Zhang Y, Zhang R, Han Z, Dong H, Yu G, Geng D, Yang HY. A minireview on chemical vapor deposition growth of wafer-scale monolayer h-BN single crystals. NANOSCALE 2021; 13:17310-17317. [PMID: 34652355 DOI: 10.1039/d1nr04034k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Hexagonal boron nitride (h-BN), with its excellent stability, flat surface, and large bandgap, plays a role in a variety of fundamental science and technology fields. The past few years have witnessed significant development in the scaled growth of h-BN single crystals. Currently, the size of h-BN crystal can be reached up to wafer-scale, paving the way towards industrial production and commercial applications. In this minireview, recent academic breakthroughs regarding the controlled growth of large-sized h-BN single crystals via chemical vapor deposition (CVD) are presented. The as-developed technique in terms of growth parameters, choice of catalysts, and the mechanism is fully emphasized, offering a guideline in enhancing the size and quality of h-BN. Several typical metal catalysts have been used in shaping scaled h-BN single crystals, of which the metal Cu substrate has drawn the most intensive attention. The significant advances in expanding the size of h-BN single crystals will largely push forward the way to h-BN industrialization and commercialization. The past few years have witnessed significant development in the scaled growth of h-BN single crystals. Currently, the size of h-BN crystal can be reached up to wafer-scale, paving the way towards industrial production and commercial applications. In this minireview, recent academic breakthroughs regarding controlled growth of large-sized h-BN single crystals via chemical vapor deposition (CVD) are present. The as-developed technique in terms of growth parameters, choice of catalysts and mechanism is fully emphasized, offering a guideline in enhancing size and quality of h-BN. Several typical metal catalysts are exhibited in shaping scaled h-BN single crystals, of which the metal Cu substrate has drawn the most intensive attentions.
Collapse
Affiliation(s)
- Lin Li
- Institute of Molecular Plus, Tianjin University, Tianjin 300072, P. R. China.
| | - Ye Zhang
- Institute of Molecular Plus, Tianjin University, Tianjin 300072, P. R. China.
| | - Ruijie Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 P. R. China.
| | - Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 P. R. China.
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 P. R. China.
| | - Hui Ying Yang
- Pillar of Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore.
| |
Collapse
|
14
|
Han Z, Li M, Li L, Jiao F, Wei Z, Geng D, Hu W. When graphene meets white graphene - recent advances in the construction of graphene and h-BN heterostructures. NANOSCALE 2021; 13:13174-13194. [PMID: 34477725 DOI: 10.1039/d1nr03733a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
2D heterostructures have very recently witnessed a boom in scientific and technological activities owing to the customized spatial orientation and tailored physical properties. A large amount of 2D heterostructures have been constructed on the basis of the combination of mechanical exfoliation and located transfer method, opening wide possibilities for designing novel hybrid systems with tuned structures, properties, and applications. Among the as-developed 2D heterostructures, in-plane graphene and h-BN heterostructures have drawn the most attention in the past few decades. The controllable synthesis, the investigation of properties, and the expansion of applications have been widely explored. Herein, the fabrication of graphene and h-BN heterostructures is mainly focused on. Then, the spatial configurations for the heterostructures are systematically probed to identify the highly related unique features. Moreover, as a most promising approach for the scaled production of 2D materials, the in situ CVD fabrication of the heterostructures is summarized, demonstrating a significant potential in the controllability of size, morphology, and quality. Further, the recent applications of the 2D heterostructures are discussed. Finally, the concerns and challenges are fully elucidated and a bright future has been envisioned.
Collapse
Affiliation(s)
- Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 P. R. China.
| | | | | | | | | | | | | |
Collapse
|
15
|
Zhang J, Tan B, Zhang X, Gao F, Hu Y, Wang L, Duan X, Yang Z, Hu P. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000769. [PMID: 32803781 DOI: 10.1002/adma.202000769] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2020] [Revised: 05/06/2020] [Indexed: 06/11/2023]
Abstract
Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.
Collapse
Affiliation(s)
- Jia Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Biying Tan
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Xin Zhang
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Feng Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Lifeng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Xiaoming Duan
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - Zhihua Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| |
Collapse
|
16
|
Pan D, Su F, Liu H, Ma Y, Das R, Hu Q, Liu C, Guo Z. The Properties and Preparation Methods of Different Boron Nitride Nanostructures and Applications of Related Nanocomposites. CHEM REC 2020; 20:1314-1337. [PMID: 32959523 DOI: 10.1002/tcr.202000079] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2020] [Revised: 08/26/2020] [Indexed: 12/14/2022]
Abstract
Due to special non-metallic polar bond between the III group (with certain metallic properties) element boron (B) and the V group element nitrogen (N), boron nitride (BN) has unique physical and chemical properties such as strong high-temperature resistance, oxidation resistance, heat conduction, electrical insulation and neutron absorption. Its unique lamellar, reticular and tubular morphologies and physicochemical properties make it attractive in the fields of adsorption, catalysis, hydrogen storage, thermal conduction, insulation, dielectric substrate of electronic devices, radiation protection, polymer composites, medicine, etc. Therefore, the synthesis and properties of BN derived materials become the main research hotspots of low-dimensional nanomaterials. This paper reviews the synthetic methods, overall properties, and applications of BN nanostructures and nanocomposites. In addition, challenges and prospect of this kind of materials are discussed.
Collapse
Affiliation(s)
- Duo Pan
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Fengmei Su
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Hu Liu
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Yong Ma
- College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao, 266590, China
| | - Rajib Das
- Oxea Chemical company (OQ), Bay City, Texas 77414, USA
| | - Qian Hu
- Integrated Composites Laboratory (ICL), Department of Chemical & Biomolecular Engineering, University of Tennessee, Knoxville, TN 37996, USA
| | - Chuntai Liu
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Zhanhu Guo
- Integrated Composites Laboratory (ICL), Department of Chemical & Biomolecular Engineering, University of Tennessee, Knoxville, TN 37996, USA
| |
Collapse
|
17
|
Tan B, Yang H, Hu Y, Gao F, Wang L, Dai M, Zhang S, Shang H, Chen H, Hu P. Synthesis of High-Quality Multilayer Hexagonal Boron Nitride Films on Au Foils for Ultrahigh Rejection Ratio Solar-Blind Photodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28351-28359. [PMID: 32459953 DOI: 10.1021/acsami.0c00449] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Solar-blind photodetectors have widespread applications due to the unique merit of a "black background" on the earth. However, most solar-blind photodetectors reported previously exhibited quite low rejection ratios (R200nm/R280nm < 103) and were interfered with by light longer than 280 nm. Herein, by an ambient pressure chemical vapor deposition (CVD) method, large-area, clean, and uniform two-dimensional (2D) multilayer h-BN films with different thicknesses have been successfully synthesized on Au foils. The synthesized multilayer h-BN film is transparent to light longer than 280 nm, showing excellent optical and optoelectronic properties to weak solar-blind light (μW/cm2). This sensitive solar-blind h-BN photodetector exhibits ultrahigh rejection ratios (R220nm/R280nm > 103 and R220nm/R290nm > 104), a low dark current (102 fA), and a large detectivity (3.9 × 1010 Jones). It is noteworthy that the rejection ratio (R220nm/R290nm) here is superior to most of those previously reported based on traditional semiconductors. This large-scale, clean, and uniform multilayer h-BN film will contribute to the progress of next-generation optoelectronic devices.
Collapse
Affiliation(s)
- Biying Tan
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Huihui Yang
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Yunxia Hu
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Feng Gao
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Lifeng Wang
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Mingjin Dai
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Shichao Zhang
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Huiming Shang
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Hongyu Chen
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - PingAn Hu
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, P. R. China
| |
Collapse
|
18
|
Zhu H, Zhao X, Li H, Zhao R. Revealing stable geometries and magic clusters of hexagonal boron nitride in the nucleation of chemical vapor deposition growth on Ni(111)/Cu(111) surfaces: a theoretical study. Phys Chem Chem Phys 2020; 22:4023-4031. [PMID: 32022041 DOI: 10.1039/c9cp06425g] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
To improve the quality of chemical vapor deposition (CVD)-prepared hexagonal boron nitride (h-BN), it is essential to understand the growth mechanism, particularly to learn the structures as well as their stabilities and kinetic evolutions of the formed clusters in the initial growth stage. Herein, we performed systematic studies on the stabilities of various geometries of different-/identical-sized BN clusters on (111) surfaces of Ni and Cu by density functional theory simulations. The results show that the stable configurations of different-sized clusters are those containing the most normal hexagons composed with alternate B and N atoms. There exist ultra-stable magic clusters on the (111) surfaces of both the metals. On Ni(111), the geometries of the magic clusters are composed of hexagons arranged in the core-shell structure, while they contain tetragons on the Cu(111) surface. The ultra-high stabilities of the magic clusters can be attributed to the comprehensive effect from the core-shell structure, high symmetry, edged atoms, and adsorption sites. The stable geometries of different-sized clusters as well as magic clusters present the vital roles of metal substrates in CVD-synthesis of h-BN and provide instructive information in improving the quality of h-BN by selecting appropriate metal substrates.
Collapse
Affiliation(s)
- Hongxia Zhu
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
| | | | | | | |
Collapse
|