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Barbot C, Rondeau-Body C, Coinon C, Deblock Y, Tilmant P, Vaurette F, Yarekha D, Berthe M, Thomas L, Diesinger H, Capiod P, Desplanque L, Grandidier B. InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy. NANOTECHNOLOGY 2024; 35:395302. [PMID: 38964286 DOI: 10.1088/1361-6528/ad5f34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Accepted: 07/04/2024] [Indexed: 07/06/2024]
Abstract
Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane In0.53Ga0.47As nanowires on InP substrates, linear arrays of In0.53Ga0.47As QDs were grown on top, with tunable lengths and separations. Kelvin probe force microscopy performed at room temperature revealed a change of quantum confinement in chains with decreasing QD sizes, which was further emphasized by the spectral shift of quantum levels resolved in the conduction band with low temperature scanning tunneling spectroscopy. This approach, which allows the controlled formation of 25 nm-thick QDs with a minimum length and separation of 30 nm and 22 nm respectively, is suitable for the construction of scalable fermionic quantum lattices.
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Affiliation(s)
- Clément Barbot
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Claire Rondeau-Body
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Christophe Coinon
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Yves Deblock
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Pascal Tilmant
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - François Vaurette
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Dmitri Yarekha
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Maxime Berthe
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Louis Thomas
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Heinrich Diesinger
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Pierre Capiod
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Bruno Grandidier
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
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Khelifi W, Canneson D, Berthe M, Legendre S, Coinon C, Desplanque L, Wallart X, Biadala L, Grandidier B, Capiod P. Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2023; 94:123702. [PMID: 38051176 DOI: 10.1063/5.0152031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Accepted: 11/09/2023] [Indexed: 12/07/2023]
Abstract
Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a Raman apparatus based on the use of a fiber optic probe, with a lens collecting the backscattered light directly inserted in ultrahigh vacuum. The solution has been tested for the preparation of III-V semiconductor surfaces, which requires the recovery of their atomic reconstruction. The surfaces were either protected with a thin As amorphous layer or covered with a native oxide prior to their treatment. The analysis of the Raman spectra, which was correlated with the study of the surfaces with low temperature scanning tunneling microscopy at the end of the cleaning process, shows the high potential of Raman spectroscopy for monitoring the cleanliness of III-V semiconductor heterostructures in situ.
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Affiliation(s)
- Wijden Khelifi
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Damien Canneson
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
- HORIBA France SAS, 455 Avenue Eugène Avinée 59120 Loos, Avenue de la Vauve-Passage Jobin Yvon, 91120 Palaiseau, France
| | - Maxime Berthe
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Sébastien Legendre
- HORIBA France SAS, 455 Avenue Eugène Avinée 59120 Loos, Avenue de la Vauve-Passage Jobin Yvon, 91120 Palaiseau, France
| | - Christophe Coinon
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Xavier Wallart
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Louis Biadala
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Bruno Grandidier
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Pierre Capiod
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
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Schmiedeke P, Döblinger M, Meinhold-Heerlein MA, Doganlar C, Finley JJ, Koblmüller G. Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality. NANOTECHNOLOGY 2023; 35:055601. [PMID: 37879325 DOI: 10.1088/1361-6528/ad06ce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
Ternary GaAsSb nanowires (NW) are key materials for integrated high-speed photonic applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high-quality properties for controlled absorption, mode confinement and waveguiding are much desired. Here, we demonstrate a unique high-temperature (high-T >650 °C) molecular beam epitaxial (MBE) approach to realize self-catalyzed GaAsSb NWs site-selectively on Si with high aspect-ratio and non-tapered morphologies under antimony (Sb)-saturated conditions. While hitherto reported low-moderate temperature growth processes result in early growth termination and inhomogeneous morphologies, the non-tapered nature of NWs under high-T growth is independent of the supply rates of relevant growth species. Analysis of dedicated Ga-flux and growth time series, allows us to pinpoint the microscopic mechanisms responsible for the elimination of tapering, namely concurrent vapor-solid, step-flow growth along NW side-facets enabled by enhanced Ga diffusion under the high-T growth. Performing growth in an Sb-saturated regime, leads to high Sb-content in VLS-GaAsSb NW close to 30% that is independent of Ga-flux. This independence enables multi-step growth via sequentially increased Ga-flux to realize uniform and very long (>7μm) GaAsSb NWs. The excellent properties of these NWs are confirmed by a completely phase-pure, twin-free zincblende (ZB) crystal structure, a homogeneous Sb-content along the VLS-GaAsSb NW growth axis, along with remarkably narrow, single-peak low-temperature photoluminescence linewidth (<15 meV) at wavelengths of ∼1100-1200 nm.
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Affiliation(s)
- P Schmiedeke
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - M Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany
| | - M A Meinhold-Heerlein
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - C Doganlar
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - J J Finley
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - G Koblmüller
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
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Effects of Different Point Defects on the Electronic Properties of III–V Al0.5Ga0.5N Photocathode Nanowires. Processes (Basel) 2022. [DOI: 10.3390/pr10040625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023] Open
Abstract
AlxGa1−xN nanowires are the key materials for next-generation ultraviolet (UV) detectors. However, such devices have a low quantum efficiency caused by the introduction of defects and impurities throughout the preparation process of nanowires. Herein, the effects of different interstitial defects and vacancy defects on the electronic structure of Al0.5Ga0.5N nanowires are investigated using density functional theory calculations. Our results successfully discovered that only the formation of an N interstitial defect is thermally stable. In addition, the introduction of different defects makes the different nanowires exhibit n-type or p-type characteristics. Additionally, different defects lead to a decrease in the conduction band minimum in band structures, which is the major cause for the decrease in work function and increase in electron affinity of Al0.5Ga0.5N nanowires. What is more, the calculation of the partial density of states also proved that the interstitial defects contribute to a re-hybridization of local electron orbitals and then cause more significant movement of the electron density. Our investigations provide theoretical guidance for the pursuit of higher-quantum-efficiency ultraviolet (UV) detectors.
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