Strain-tunable electronic and optical properties of novel anisotropic green phosphorene: a first-principles study

Electrostatic Gating of Phosphorene Polymorphs

The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

New graphane: inspiration from the structure correlation with phosphorene

The application of phosphorene and graphane in different photoelectric devices and energy reserves has attracted wide attention. Here, we investigated the Raman spectra, phonon dispersion and vibration modes of four phosphorene monolayer polymorphs and four graphane allotropes with the corresponding crystal structures to analyze the structure correlation between them. Based on the "three identical, one divergent" pattern found in the sp3 hybrid atomic orbitals of phosphorene and graphane, four new graphane conformers with different hydrogenation modes named γδ-G, αγ-G, βγ-G and αδ-G are successfully predicted. Among these four new graphane conformers, βγ-G has the lowest binding energy, which is only 0.02 eV per atom higher than β-G, the most stable one among all graphane theoretically predicted. This means that βγ-G may co-exist with β-G during the experimental synthesis of graphane, which can be distinguished from the side views with threefold structures for βγ-G and twofold structures for β-G. All the new graphane conformers are direct-band-gap semiconductors with band gaps more than 3 eV, which indicate their great potential in optoelectronic devices. Furthermore, three of them exhibit in-plane negative Poisson's ratios under tensile deformation.

Phase Transition and Band Gap Regulation by Halogen Substituents on the Organic Cation in Organic-Inorganic Hybrid Perovskite Semiconductors

In the last decade, hybrid materials have received widespread attention. In particular, hybrid lead halide perovskite-type semiconductors are very attractive owing to their great flexibility in band gap engineering. Here, by using precise molecular modifications, three one-dimensional perovskite-type semiconductor materials are designed and obtained: [Me₃ PCH₂ X][PbBr₃ ] (X=H, F, and Cl for compounds 1, 2, and 3, respectively). The introduction of a heavier halogen atom (F or Cl) to [Me₄ P]⁺ increases the potential energy barrier required for the tumbling motion of the cation, hence achieving the transformation of the phase transition temperature from low temperature (192 K) to room temperature (285 K) and high temperature (402.3 K). Moreover, the optical band gaps reveal a broadening trend with 3.176 eV, 3.215 eV, and 3.376 eV along the H→F→Cl series, which is attributed to the formation of the structural distortion.