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Wu B, Zhang Z, Chen B, Zheng Z, You C, Liu C, Li X, Wang J, Wang Y, Song E, Cui J, An Z, Huang G, Mei Y. One-step rolling fabrication of VO 2 tubular bolometers with polarization-sensitive and omnidirectional detection. SCIENCE ADVANCES 2023; 9:eadi7805. [PMID: 37851806 PMCID: PMC10584336 DOI: 10.1126/sciadv.adi7805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2023] [Accepted: 09/15/2023] [Indexed: 10/20/2023]
Abstract
Uncooled infrared detection based on vanadium dioxide (VO2) radiometer is highly demanded in temperature monitoring and security protection. The key to its breakthrough is to fabricate bolometer arrays with great absorbance and excellent thermal insulation using a straightforward procedure. Here, we show a tubular bolometer by one-step rolling VO2 nanomembranes with enhanced infrared detection. The tubular geometry enhances the thermal insulation, light absorption, and temperature sensitivity of freestanding VO2 nanomembranes. This tubular VO2 bolometer exhibits a detectivity of ~2 × 108 cm Hz1/2 W-1 in the ultrabroad infrared spectrum, a response time of ~2.0 ms, and a calculated noise-equivalent temperature difference of 64.5 mK. Furthermore, our device presents a workable structural paradigm for polarization-sensitive and omnidirectional light coupling bolometers. The demonstrated overall characteristics suggest that tubular bolometers have the potential to narrow performance and cost gap between photon detectors and thermal detectors with low cost and broad applications.
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Affiliation(s)
- Binmin Wu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Ziyu Zhang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Bingxin Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zhi Zheng
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Chunyu You
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Chang Liu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Xing Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Jinlong Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Yunqi Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Enming Song
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Jizhai Cui
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
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Microstructure and Magnetic Properties Dependence on the Sputtering Power and Deposition Time of TbDyFe Thin Films Integrated on Single-Crystal Diamond Substrate. Processes (Basel) 2022. [DOI: 10.3390/pr10122626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022] Open
Abstract
As giant magnetostrictive material, TbDyFe is regarded as a promising choice for magnetic sensing due to its excellent sensitivity to changes in magnetic fields. To satisfy the requirements of high sensitivity and the stability of magnetic sensors, TbDyFe thin films were successfully deposited on single-crystal diamond (SCD) substrate with a Young’s modulus over 1000 GPa and an ultra-stable performance by radio-frequency magnetron sputtering at room temperature. The sputtering power and deposition time effects of TbDyFe thin films on phase composition, microstructure, and magnetic properties were investigated. Amorphous TbDyFe thin films were achieved under various conditions of sputtering power and deposition time. TbDyFe films appeared as an obvious boundary to SCD substrate as sputtering power exceeded 100 W and deposition time exceeded 2 h, and the thickness of the films was basically linear with the sputtering power and deposition time based on a scanning electron microscope (SEM). The film roughness ranged from 0.15 nm to 0.35 nm, which was measured by an atomic force microscope (AFM). The TbDyFe film prepared under a sputtering power of 100 W and a deposition time of 3 h possessed the coercivity of 48 Oe and a remanence ratio of 0.53, with a giant magnetostriction and Young’s modulus effect, suggesting attractive magnetic sensitivity. The realization of TbDyFe/SCD magnetic material demonstrates a foreseeable potential in the application of high-performance sensors.
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Xue Y, Yin S. Element doping: a marvelous strategy for pioneering the smart applications of VO 2. NANOSCALE 2022; 14:11054-11097. [PMID: 35900045 DOI: 10.1039/d2nr01864k] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Smart materials are leading the future of materials by virtue of their autonomous response behavior to external stimuli; it is widely believed their development and application will bring a new revolution. Among them, vanadium dioxide (VO2) is a special one showing a unique multi-stimulus responsive metal-insulator transition (MIT) accompanied by a structural phase transition (SPT) with striking changes of physical properties including optical, electrical and thermal properties, etc., making it ideal for smart windows, micro-bolometers, actuators, etc. Since the attractive performances of VO2 are rooted in MIT behavior (coupled with SPT), element doping becomes a powerful tool in tailoring VO2 performance. Oriented on the practical requirements, element-doped VO2 is more promising and competitive in terms of performance, prospect, and cost. Here we focus specifically on element-doped VO2, the recent progress and potential challenges of which are discussed. We devote attention to the crucial roles of element doping in modulating the properties and driving the practicality of VO2, aiming to inspire current research to pioneer new applications of VO2.
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Affiliation(s)
- Yibei Xue
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan
| | - Shu Yin
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan.
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