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Enomoto K, Miranti R, Liu J, Okano R, Inoue D, Kim D, Pu YJ. Anisotropic electronic coupling in three-dimensional assembly of CsPbBr 3 quantum dots. Chem Sci 2024; 15:13049-13057. [PMID: 39148765 PMCID: PMC11323341 DOI: 10.1039/d4sc01769b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2024] [Accepted: 07/13/2024] [Indexed: 08/17/2024] Open
Abstract
Cesium lead halide (CsPbX3, X = Cl, Br, or I) perovskite quantum dots (PeQDs) show promise for next-generation optoelectronics. In this study, we controlled the electronic coupling between PeQD multilayers using a layer-by-layer method and dithiol linkers of varying structures. The energy shift of the first excitonic peak from monolayer to bilayer decreases exponentially with increasing interlayer spacer distance, indicating the resonant tunnelling effect. X-ray diffraction measurements revealed anisotropic inter-PeQD distances in multiple layers. Photoluminescence (PL) analysis showed lower energy emission in the in-plane direction due to the electronic coupling in the out-of-plane direction, supporting the anisotropic electronic state in the PeQD multilayers. Temperature-dependent PL and PL lifetimes indicated changes in exciton behaviour due to the delocalized electronic state in PeQD multilayers. Particularly, the electron-phonon coupling strength increased, and the exciton recombination rate decreased. This is the first study demonstrating controlled electronic coupling in a three-dimensional ordered structure, emphasizing the importance of the anisotropic electronic state for high-performance PeQDs devices.
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Affiliation(s)
- Kazushi Enomoto
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Retno Miranti
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Jianjun Liu
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Rinkei Okano
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Daishi Inoue
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - DaeGwi Kim
- Department of Physics and Electronics, Osaka Metropolitan University Osaka 558-8585 Japan
| | - Yong-Jin Pu
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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Abiram G, Thanihaichelvan M, Ravirajan P, Velauthapillai D. Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2396. [PMID: 35889621 PMCID: PMC9322712 DOI: 10.3390/nano12142396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Revised: 06/29/2022] [Accepted: 07/02/2022] [Indexed: 12/10/2022]
Abstract
Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.
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Affiliation(s)
- Gnanasampanthan Abiram
- Department of Physics, University of Jaffna, Jaffna 40 000, Sri Lanka; (G.A.); (P.R.)
- Department of Computer Science, Electrical Engineering and Mathematical Sciences, Western Norway University of Applied Sciences, Inndalsveien 28, 5063 Bergen, Norway
| | | | | | - Dhayalan Velauthapillai
- Department of Computer Science, Electrical Engineering and Mathematical Sciences, Western Norway University of Applied Sciences, Inndalsveien 28, 5063 Bergen, Norway
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Xu Q, Huang J, Liu J, Wang J, Zhou S, Wang X, Nie J, Guo Y, Ouyang X. Lead halide perovskite quantum dots based liquid scintillator for x-ray detection. NANOTECHNOLOGY 2021; 32:205201. [PMID: 33561843 DOI: 10.1088/1361-6528/abe48a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Lead halide quantum dots (QDs) have unique optical properties such as a tunable wavelength, narrow band, and high quantum efficiency, and have been used in optoelectronics such as light-emitting diode device, and photodetector. Recently, solution-processed perovskite has also attracted great attention for high sensitivity x-ray detector. Here, we have investigated the scintillation performances of Pb halide perovskite QDs solution. Both CH3NH3PbBr3 and CsPbBr3 QDs liquid scintillator exhibits the scintillation performances such as the linear relationship with the irradiation dose rate in a wide range, high radiation hardness, thermal stability, and fast counting speed. The scintillation performances of these liquid perovskite QDs solution provide a promising potential application for indirect radiation applications including fast gamma-ray counter and wide range dosimeter.
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Affiliation(s)
- Qiang Xu
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Jie Huang
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Jun Liu
- Shaanxi Engineering Research Center of Controllable Neutron Source, School of Science, Xijing University, Xi'an, 710123, People's Republic of China
- Northwest Institute of Nuclear Technology, Xi'an, 710024, People's Republic of China
| | - Juan Wang
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Shuai Zhou
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Xiang Wang
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Jing Nie
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Yong Guo
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
| | - Xiaoping Ouyang
- Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, People's Republic of China
- Shaanxi Engineering Research Center of Controllable Neutron Source, School of Science, Xijing University, Xi'an, 710123, People's Republic of China
- Northwest Institute of Nuclear Technology, Xi'an, 710024, People's Republic of China
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Kuruoğlu F, Çalışkan M, Serin M, Erol A. Well-ordered nanoparticle arrays for floating gate memory applications. NANOTECHNOLOGY 2020; 31:215203. [PMID: 31986505 DOI: 10.1088/1361-6528/ab7043] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabricated as a metal-oxide-semiconductor capacitor structure. With superior control on the size, shape and position of nanoparticles, the presented nano-floating gate memory (NFGM) device possesses almost perfect precision of device geometry. The well-ordered Au NPs embedded within the memory device exhibit large memory window at low operation voltages (8.8V @ ± 15V), fast operation time (<10-4 s) and good retention (up to 107 s). In this work, the structural properties of the NFGM device are correlated with the examined electrical properties. The current results are compared with the other studies in the literature to emphasis the advantages of the precise ordering and geometry of the NPs.
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Affiliation(s)
- Furkan Kuruoğlu
- Department of Physics, Faculty of Science, Istanbul University, Vezneciler, 34134, Istanbul, Turkey
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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