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Chen Y, Ben J, Xu F, Li J, Chen Y, Sun X, Li D. Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes. FUNDAMENTAL RESEARCH 2021. [DOI: 10.1016/j.fmre.2021.11.005] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022] Open
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Li J, Gao N, Cai D, Lin W, Huang K, Li S, Kang J. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. LIGHT, SCIENCE & APPLICATIONS 2021; 10:129. [PMID: 34150202 PMCID: PMC8206881 DOI: 10.1038/s41377-021-00563-0] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 04/25/2021] [Accepted: 05/24/2021] [Indexed: 05/22/2023]
Abstract
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.
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Affiliation(s)
- Jinchai Li
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Na Gao
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Duanjun Cai
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Wei Lin
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Kai Huang
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Shuping Li
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Junyong Kang
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
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Sheikhi M, Dai Y, Cui M, Li L, Liu J, Lan W, Jiang R, Guo W, Chee KW, Ye J. On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes. MICROMACHINES 2020; 11:mi11060572. [PMID: 32516889 PMCID: PMC7345201 DOI: 10.3390/mi11060572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 12/05/2019] [Accepted: 12/17/2019] [Indexed: 11/21/2022]
Abstract
The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices.
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Affiliation(s)
- Moheb Sheikhi
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yijun Dai
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mei Cui
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liang Li
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianzhe Liu
- Zhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321016, China; (J.L.); (W.L.)
| | - Wenan Lan
- Zhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321016, China; (J.L.); (W.L.)
| | - Rongrong Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
| | - Wei Guo
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Correspondence: (W.G.); (K.W.A.C.)
| | - Kuan W.A. Chee
- Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Laser Research Institute, Shandong Academy of Sciences, Qingdao 226100, China
- Correspondence: (W.G.); (K.W.A.C.)
| | - Jichun Ye
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
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