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Yu W, Li F, Huang T, Li W, Wu T. Go beyond the limit: Rationally designed mixed-dimensional perovskite/semiconductor heterostructures and their applications. Innovation (N Y) 2023; 4:100363. [PMID: 36632191 PMCID: PMC9827388 DOI: 10.1016/j.xinn.2022.100363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 12/18/2022] [Indexed: 12/24/2022] Open
Abstract
Halide perovskite heterojunctions rationally integrate the chemical and physical properties of multi-dimensional perovskites and judiciously chosen semiconductor materials, offering the promise of going beyond the limit of a single component. This emerging platform of materials innovation offers fresh opportunities to tune material properties, discover interesting phenomena, and enable novel applications. In this review, we first discuss the fundamentals of forming heterojunctions with perovskites and a wide range of semiconductors, and then we give an overview of the research progress of halide perovskite heterojunctions in terms of their optical, electrical, and mechanical properties, focusing on how the heterojunction tunes the energy band structure, electrical transport, and charge recombination behaviors. We further outline the progress of perovskite-based heterojunctions in optoelectronics. Finally, the challenges and future research directions for perovskite/semiconductor heterojunctions are discussed.
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Affiliation(s)
- Weili Yu
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Feng Li
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Tao Huang
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Wei Li
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
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Yu Y, Zhao C, Ma L, Yan L, Jiao B, Li J, Xi J, Si J, Li Y, Xu Y, Dong H, Dai J, Yuan F, Zhu P, Jen AKY, Wu Z. Harvesting the Triplet Excitons of Quasi-Two-Dimensional Perovskite toward Highly Efficient White Light-Emitting Diodes. J Phys Chem Lett 2022; 13:3674-3681. [PMID: 35438498 DOI: 10.1021/acs.jpclett.2c00996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Utilization of triplet excitons, which generally emit poorly, is always fundamental to realize highly efficient organic light-emitting diodes (LEDs). While triplet harvest and energy transfer via electron exchange between triplet donor and acceptor are fully understood in doped organic phosphorescence and delayed fluorescence systems, the utilization and energy transfer of triplet excitons in quasi-two-dimensional (quasi-2D) perovskite are still ambiguous. Here, we use an orange-phosphorescence-emitting ultrathin organic layer to probe triplet behavior in the sky-blue-emitting quasi-2D perovskite. The delicate white LED architecture enables a carefully tailored Dexter-like energy-transfer mode that largely harvests the triplet excitons in quasi-2D perovskite. Our white organic-inorganic LEDs achieve maximum forward-viewing external quantum efficiency of 8.6% and luminance over 15 000 cd m-2, exhibiting a significant efficiency enhancement versus the corresponding sky-blue perovskite LED (4.6%). The efficient management of energy transfer between excitons in quasi-2D perovskite and Frenkel excitons in the organic layer opens the door to fully utilizing excitons for white organic-inorganic LEDs.
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Affiliation(s)
- Yue Yu
- School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
| | - Chenjing Zhao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Lin Ma
- School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
| | - Lihe Yan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jingrui Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jinhai Si
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yuren Li
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yanmin Xu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Peichao Zhu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Alex K-Y Jen
- Department of Physics & Materials Science, City University of Hong Kong, Kowloon, Hong Kong
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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Abd-Elrahim A, Ali MA. Facile synthesis of nano-sized zinc-rich ZnCdS ternary alloy and UV-irradiation curing of photoluminescence emission characteristics. OPTICAL MATERIALS 2021; 122:111774. [DOI: 10.1016/j.optmat.2021.111774] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
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Chen J, Xiang H, Wang J, Wang R, Li Y, Shan Q, Xu X, Dong Y, Wei C, Zeng H. Perovskite White Light Emitting Diodes: Progress, Challenges, and Opportunities. ACS NANO 2021; 15:17150-17174. [PMID: 34758267 DOI: 10.1021/acsnano.1c06849] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As global warming, energy shortages, and environment pollution have intensified, low-carbon and energy-saving lighting technology has attracted great attention worldwide. Light emitting diodes (LEDs) have been around for decades and are considered to be the most ideal lighting technology currently due to their high luminescence efficiency (LE) and long lifespan. Besides, along with the development of modern technology, lighting technologies with higher performance and more functions are desired. Perovskite based LEDs (PeLEDs) have recently emerged as ideal candidates for lighting technology owing to the extraordinary photoelectric properties of perovskite, such as high photoluminescence quantum yields (PLQYs), easy wavelength tuning, and low-cost synthesis. Herein, we open this review by introducing the background of white LEDs (WLEDs), including their light-emitting mechanism, typical characteristics, and key indicators in applications. Then, four main approaches to fabricate WLEDs are discussed and compared. After that, in accordance with the four categories, we focus on the recent progress of white PeLEDs (Pe-WLEDs), followed by the challenges and opportunities for Pe-WLEDs in practical application. Meanwhile, some pertinent countermeasures to their challenges are put forward. Finally, the development promise of Pe-WLEDs is explored.
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Affiliation(s)
- Jiawei Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jian Wang
- Department of Chemistry, University of Washington, Seattle, Washington 98195-2120, United States
| | - Run Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yan Li
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiaobao Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yuhui Dong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Changting Wei
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Ma Z, Shi Z, Yang D, Li Y, Zhang F, Wang L, Chen X, Wu D, Tian Y, Zhang Y, Zhang L, Li X, Shan C. High Color-Rendering Index and Stable White Light-Emitting Diodes by Assembling Two Broadband Emissive Self-Trapped Excitons. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2001367. [PMID: 33225543 DOI: 10.1002/adma.202001367] [Citation(s) in RCA: 68] [Impact Index Per Article: 22.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Revised: 08/25/2020] [Indexed: 05/06/2023]
Abstract
White light-emitting diodes (WLEDs) are promising next-generation solid-state light sources. However, the commercialization route for WLED production suffers from challenges in terms of insufficient color-rendering index (CRI), color instability, and incorporation of rare-earth elements. Herein, a new two-component strategy is developed by assembling two broadband emissive materials with self-trapped excitons (STEs) for high CRI and stable WLEDs. The strategy addresses effectively the challenging issues facing current WLEDs. Based on first-principles thermodynamic calculations, copper-based ternary halides composites, CsCu2 I3 @Cs3 Cu2 I5 , are synthesized by a facile one-step solution approach. The composites exhibit an ideal white-light emission with a cold/warm white-light tuning and a robust stability against heat, ultraviolet light, and environmental oxygen/moisture. A series of cold/warm tunable WLEDs is demonstrated with a maximum luminance of 145 cd m-2 and an external quantum efficiency of 0.15%, and a record high CRI of 91.6 is achieved, which is the highest value for lead-free WLEDs. Importantly, the fabricated device demonstrates an excellent operation stability in a continuous current mode, exhibiting a long half-lifetime of 238.5 min. The results promise the use of the hybrids of STEs-derived broadband emissive materials for high-performance WLEDs.
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Affiliation(s)
- Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Dongwen Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yawen Li
- State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Fei Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Lintao Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China
| | - Lijun Zhang
- State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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