1
|
Sleziona S, Pelella A, Faella E, Kharsah O, Skopinski L, Maas A, Liebsch Y, Schmeink J, Di Bartolomeo A, Schleberger M. Manipulation of the electrical and memory properties of MoS 2 field-effect transistors by highly charged ion irradiation. NANOSCALE ADVANCES 2023; 5:6958-6966. [PMID: 38059017 PMCID: PMC10696994 DOI: 10.1039/d3na00543g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/24/2023] [Indexed: 12/08/2023]
Abstract
Field-effect transistors based on molybdenum disulfide (MoS2) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS2 lattice or in the underlying substrate. We fabricated MoS2 field-effect transistors on SiO2/Si substrates, irradiated these devices with Xe30+ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: while the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude. We also find a significantly reduced n-doping (≈1012 cm-2) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS2 field-effect transistor as a memory device with remarkably longer relaxation times (≈ minutes) compared to previous works.
Collapse
Affiliation(s)
- Stephan Sleziona
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Aniello Pelella
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Enver Faella
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Osamah Kharsah
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Lucia Skopinski
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - André Maas
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Yossarian Liebsch
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Jennifer Schmeink
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Antonio Di Bartolomeo
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Marika Schleberger
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| |
Collapse
|
2
|
Chavda CP, Srivastava A, Vaughan E, Wang J, Gartia MR, Veronis G. Effect of gamma irradiation on the physical properties of MoS 2 monolayer. Phys Chem Chem Phys 2023; 25:22359-22369. [PMID: 37580985 DOI: 10.1039/d3cp02925e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDs) have been proposed as novel optoelectronic materials for space applications due to their relatively light weight. MoS2 has been shown to have excellent semiconducting and photonic properties. Although the strong interaction of ionizing gamma radiation with bulk materials has been demonstrated, understanding its effect on atomically thin materials has scarcely been investigated. Here, we report the effect of gamma irradiation on the structural and electronic properties of a monolayer of MoS2. We perform Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) studies of MoS2, before and after gamma ray irradiation with varying doses and density functional theory (DFT) calculations. The Raman spectra and XPS results demonstrate that point defects dominate after the gamma irradiation of MoS2. DFT calculations elucidate the electronic properties of MoS2 before and after irradiation. Our work makes several contributions to the field of 2D materials research. First, our study of the electronic density of states and the electronic properties of a MoS2 monolayer irradiated by gamma rays sheds light on the properties of a MoS2 monolayer under gamma irradiation. Second, our study confirms that point defects are formed as a result of gamma irradiation. And third, our DFT calculations qualitatively suggest that the conductivity of the MoS2 monolayer may increase after gamma irradiation due to the creation of additional defect states.
Collapse
Affiliation(s)
- Chintan P Chavda
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA.
| | - Ashok Srivastava
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA.
| | - Erin Vaughan
- United States Airforce Research Laboratory, Albuquerque, NM, USA.
| | - Jianwei Wang
- Department of Geology and Geophysics, Louisiana State University, Baton Rouge, LA, USA.
| | - Manas Ranjan Gartia
- Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA, USA.
| | - Georgios Veronis
- Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA, USA.
- Center for Computation and Technology, Louisiana State University, Baton Rouge, LA, USA.
| |
Collapse
|
3
|
Li H, Liu C, Zhang Y, Qi C, Ma G, Wang T, Dong S, Huo M. Modulation of 1 MeV electron irradiation on ultraviolet response in MoS 2FET. NANOTECHNOLOGY 2021; 32:475205. [PMID: 34388741 DOI: 10.1088/1361-6528/ac1d79] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 08/12/2021] [Indexed: 06/13/2023]
Abstract
The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2FET.
Collapse
Affiliation(s)
- Heyi Li
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Chaoming Liu
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Yanqing Zhang
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Chunhua Qi
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Guoliang Ma
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Tianqi Wang
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Shangli Dong
- Harbin Institute of Technology, Harbin, People's Republic of China
| | - Mingxue Huo
- Harbin Institute of Technology, Harbin, People's Republic of China
| |
Collapse
|
4
|
Huang XN, Shi JY, Yao Y, Peng SA, Zhang DY, Jin Z. Layer thickness influenced irradiation effects of proton beam on MoS 2 field effect transistors. NANOTECHNOLOGY 2021; 32:135204. [PMID: 33285531 DOI: 10.1088/1361-6528/abd129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigated the influence of the flake thickness for molybdenum disulfide (MoS2) field effect transistors on the effect of a 150 keV high-energy proton beam applied on these devices. The electrical characteristics of the devices with channel thicknesses ranging from monolayer to bulk were measured before and after proton irradiation with a proton fluence of 5 × 1014 cm-2. The subthreshold swing (SS), threshold voltage shift and electron mobility were extracted with the Y-function method after proton irradiation and significant degradation were observed. It is found that, with the increase of layer thickness, mobility degradation and threshold voltage shift both eased, but the SS degradation was insensitive to the MoS2 flake thickness increase. We also demonstrate that the threshold voltage shift is dominated by oxide charges; however, the mobility and SS degradations are mainly affected by the interface traps. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nano-electronic devices. By increasing the MoS2 flake thickness to a certain extent, one can hopefully find a balance between effectively resisting [Formula: see text] shift and achieving high mobility and small SS degradation.
Collapse
Affiliation(s)
- Xin-Nan Huang
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jing-Yuan Shi
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yao Yao
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Song-Ang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Da-Yong Zhang
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhi Jin
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| |
Collapse
|
5
|
Bartošík M, Mach J, Piastek J, Nezval D, Konečný M, Švarc V, Ensslin K, Šikola T. Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors. ACS Sens 2020; 5:2940-2949. [PMID: 32872770 DOI: 10.1021/acssensors.0c01441] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.
Collapse
Affiliation(s)
- Miroslav Bartošík
- Central European Institute of Technology - Brno University of Technology (CEITEC BUT), Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
- Department of Physics and Materials Engineering, Faculty of Technology, Tomas Bata University in Zlín, Vavrečkova 275, 760 01 Zlín, Czech Republic
| | - Jindřich Mach
- Central European Institute of Technology - Brno University of Technology (CEITEC BUT), Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - Jakub Piastek
- Central European Institute of Technology - Brno University of Technology (CEITEC BUT), Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - David Nezval
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - Martin Konečný
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - Vojtěch Švarc
- Central European Institute of Technology - Brno University of Technology (CEITEC BUT), Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - Klaus Ensslin
- Solid State Physics Laboratory, ETH Zürich, CH 8093 Zürich, Switzerland
| | - Tomáš Šikola
- Central European Institute of Technology - Brno University of Technology (CEITEC BUT), Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| |
Collapse
|