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Kim HJ, Chong M, Rhee TG, Khim YG, Jung MH, Kim YM, Jeong HY, Choi BK, Chang YJ. Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth. NANO CONVERGENCE 2023; 10:10. [PMID: 36806667 PMCID: PMC9941396 DOI: 10.1186/s40580-023-00359-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Accepted: 01/31/2023] [Indexed: 05/14/2023]
Abstract
In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques.
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Affiliation(s)
- Hyuk Jin Kim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Minsu Chong
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Tae Gyu Rhee
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea
| | - Yeong Gwang Khim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Byoung Ki Choi
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea.
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea.
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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Kang T, Tang TW, Pan B, Liu H, Zhang K, Luo Z. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics. ACS MATERIALS AU 2022; 2:665-685. [PMID: 36855548 PMCID: PMC9928416 DOI: 10.1021/acsmaterialsau.2c00029] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.
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Affiliation(s)
- Ting Kang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Tsz Wing Tang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Baojun Pan
- Macao
Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macau 999078, P.R. China
| | - Hongwei Liu
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Kenan Zhang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Zhengtang Luo
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China,
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