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Ekinci G, Özkal B, Kazan S. Investigation of Resistance Switching and Synaptic Properties of VO x for Neuromorphic Applications. ACS OMEGA 2024; 9:26235-26244. [PMID: 38911771 PMCID: PMC11190910 DOI: 10.1021/acsomega.4c02001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 05/12/2024] [Accepted: 05/23/2024] [Indexed: 06/25/2024]
Abstract
The taking run on artificial intelligence in the last decades is based on the von Neumann architecture where memory and computation units are separately located from each other. This configuration causes a large amount of energy and time to be dissipated during data transfer between these two units, in contrast to synapses in biological neurons. A new paradigm has been proposed inspired by biological neurons in human brains, known as neuromorphic computing. Due to the unusual current-voltage characteristic of memristor devices such as pinched hysteresis loops, memristors are considered a key element of neuromorphic architecture. In this study, we report the basic current-voltage characteristic of the memristor devices in the form of Si/SiO2/Pt(30 nm)/VO x (3, 13, 25 nm)/Pt (30 nm) sandwich structure. Synaptic functions such as spike-time-dependent plasticity (STDP), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD) of memristor devices were examined in detail. The oxide layer VO x has been grown by using the VO2 target in a pulsed laser deposition (PLD) chamber. The composition and oxidation states of the oxide layer were examined using the X-ray photoelectron spectroscopy (XPS) technique. The status of oxygen vacancies, which play an active role in the operation of the devices, was examined with a photoluminescence (PL) technique. The experimental results showed that the thickness of the oxide layer can significantly influence the synaptic and resistive switching properties of the devices.
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Affiliation(s)
- Gökhan Ekinci
- Department
of Physics, Gebze Technical University, Kocaeli 41400, Türkiye
- Department
of Physics, Pîrî Reis University, Istanbul 34940, Türkiye
| | - Bünyamin Özkal
- Department
of Physics, Gebze Technical University, Kocaeli 41400, Türkiye
| | - Sinan Kazan
- Department
of Physics, Gebze Technical University, Kocaeli 41400, Türkiye
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Hellenbrand M, MacManus-Driscoll J. Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing. NANO CONVERGENCE 2023; 10:44. [PMID: 37710080 PMCID: PMC10501996 DOI: 10.1186/s40580-023-00392-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 08/30/2023] [Indexed: 09/16/2023]
Abstract
In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas. Here, we address the specific area of multi-level resistive switching in hafnium-oxide-based devices for neuromorphic applications and summarize the progress of the most recent years. While the general approach of resistive switching based on hafnium oxide thin films has been very busy over the last decade or so, the development of hafnium oxide with a continuous range of programmable states per device is still at a very early stage and demonstrations are mostly at the level of individual devices with limited data provided. On the other hand, it is positive that there are a few demonstrations of full network implementations. We summarize the general status of the field, point out open questions, and provide recommendations for future work.
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Affiliation(s)
- Markus Hellenbrand
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK.
| | - Judith MacManus-Driscoll
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK
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Ge S, Sang D, Zou L, Yao Y, Zhou C, Fu H, Xi H, Fan J, Meng L, Wang C. A Review on the Progress of Optoelectronic Devices Based on TiO 2 Thin Films and Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1141. [PMID: 37049236 PMCID: PMC10096923 DOI: 10.3390/nano13071141] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/18/2023] [Accepted: 03/21/2023] [Indexed: 06/19/2023]
Abstract
Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO2-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO2-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.
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Affiliation(s)
- Shunhao Ge
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Dandan Sang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Liangrui Zou
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Yu Yao
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Chuandong Zhou
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Hailong Fu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hongzhu Xi
- Anhui Huadong Photoelectric Technology Research Institute, Wuhu 241002, China
| | - Jianchao Fan
- Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., Liaocheng 252000, China
| | - Lijian Meng
- Instituto Superior de Engenharia do Porto, Polytechnic of Porto, Rua António Bernardino de Almeida, 4249-015 Porto, Portugal
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
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Song Y, Feng G, Sun C, Liang Q, Wu L, Yu X, Lei S, Hu W. Ternary Conductance Switching Realized by a Pillar[5]arene-Functionalized Two-Dimensional Imine Polymer Film. Chemistry 2021; 27:13605-13612. [PMID: 34312929 DOI: 10.1002/chem.202101772] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2021] [Indexed: 02/05/2023]
Abstract
Nowadays, most manufacturing memory devices are based on materials with electrical bistability (i. e., "0" and "1") in response to an applied electric field. Memory devices with multilevel states are highly desired so as to produce high-density and efficient memory devices. Herein, we report the first multichannel strategy to realize a ternary-state memristor. We make use of the intrinsic sub-nanometer channel of pillar[5]arene and nanometer channel of a two-dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. Low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio (OFF/ON1/ON2=1 : 10 : 103 ), and high ternary yield (75 %) were obtained. In addition, the flexible memory device based on 2DPTPAZ+TAPB can maintain its stable ternary memory performance after being bent 500 times. The device also exhibits excellent thermal stability and can tolerate a temperature as high as 300 °C. It is envisioned that the results of this work will open up possibilities for multistate, flexible resistive memories with good thermal stability and low energy consumption, and broaden the application of pillar[n]arene.
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Affiliation(s)
- Yaru Song
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Guangyuan Feng
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Chenfang Sun
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Qiu Liang
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Lingli Wu
- Medical College, Northwest Minzu University, Lanzhou, 730000, P. R. China
| | - Xi Yu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
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Illarionov GA, Morozova SM, Chrishtop VV, Einarsrud MA, Morozov MI. Memristive TiO 2: Synthesis, Technologies, and Applications. Front Chem 2020; 8:724. [PMID: 33134249 PMCID: PMC7567014 DOI: 10.3389/fchem.2020.00724] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2020] [Accepted: 07/14/2020] [Indexed: 11/13/2022] Open
Abstract
Titanium dioxide (TiO2) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO2 thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO2. Following a brief introduction, we provide an overview of the major areas of application of TiO2-based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.
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Affiliation(s)
- Georgii A. Illarionov
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, St. Petersburg, Russia
| | - Sofia M. Morozova
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, St. Petersburg, Russia
| | - Vladimir V. Chrishtop
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, St. Petersburg, Russia
| | - Mari-Ann Einarsrud
- Department of Material Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, Norway
| | - Maxim I. Morozov
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, St. Petersburg, Russia
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