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Li Z, Trendafilov S, Zhang F, Allen MS, Allen JW, Dev SU, Pan W, Yu Y, Gao Q, Yuan X, Yang I, Zhu Y, Bhat A, Peng SX, Lei W, Tan HH, Jagadish C, Fu L. Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging. NANO LETTERS 2021; 21:7388-7395. [PMID: 34424703 DOI: 10.1021/acs.nanolett.1c02777] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAs0.94Sb0.06 nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires. High responsivity and detectivity (up to 44.9 A/W and 1.2 × 1012 cm √Hz/W at 1 V, respectively) were obtained from the array photodetectors, enabling high-resolution RGB color imaging by applying such a nanowire array based single pixel imager. The results indicate that our filter-free wavelength-selective GaAsSb nanowire array photodetectors are promising candidates for the development of future high-quality multispectral imagers.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Simeon Trendafilov
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Monica S Allen
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Jeffery W Allen
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Sukrith U Dev
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Wenwu Pan
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA 6009, Australia
| | - Yang Yu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Inseok Yang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Advanced LED Development Group, Device Solutions, Samsung Electronics Co. Ltd., Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Yi Zhu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Anha Bhat
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Sherry X Peng
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wen Lei
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA 6009, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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Devkota S, Parakh M, Johnson S, Ramaswamy P, Lowe M, Penn A, Reynolds L, Iyer S. A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector. NANOTECHNOLOGY 2020; 31:505203. [PMID: 33021209 DOI: 10.1088/1361-6528/abb506] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (TGaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 °C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at ∼1.2 µm was demonstrated. These PDs exhibited responsivity in the range of 580-620 A W-1 and detectivity of 1.2-3.8 × 1012 Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.
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Affiliation(s)
- Shisir Devkota
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Mehul Parakh
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Sean Johnson
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Priyanka Ramaswamy
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Michael Lowe
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Aubrey Penn
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, United States of America
- Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America
| | - Lew Reynolds
- Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America
| | - Shanthi Iyer
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
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Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon. NANOMATERIALS 2020; 10:nano10102064. [PMID: 33086569 PMCID: PMC7603276 DOI: 10.3390/nano10102064] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Revised: 09/26/2020] [Accepted: 09/27/2020] [Indexed: 01/11/2023]
Abstract
During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III–As Antimonide (III–As–Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)—compatible silicon substrate to exploit its scalability, and relative abundance in high-performance and cost-effective integrated circuits based on the well-established technology. Ternary III–As–Sb nanowires (NWs) hold enormous promise for the fabrication of high-performance optoelectronic nanodevices with tunable bandgap. However, the direct epitaxial growth of gold-free ternary III–As–Sb NWs on silicon is extremely challenging, due to the surfactant effect of Sb. This review highlights the recent progress towards the monolithic integration of III–As–Sb NWs on Si. First, a comprehensive and in-depth review of recent progress made in the gold-free growth of III–As–Sb NWs directly on Si is explicated, followed by a detailed description of the root cause of Sb surfactant effect and its influence on the morphology and structural properties of Au-free ternary III–As–Sb NWs. Then, the various strategies that have been successfully deployed for mitigating the Sb surfactant effect for enhanced Sb incorporation are highlighted. Finally, recent advances made in the development of CMOS compatible, Ternary III–As–Sb NWs based, high-performance optoelectronic devices are elucidated.
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