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Lin F, Cui J, Zhang Z, Wei Z, Hou X, Meng B, Liu Y, Tang J, Li K, Liao L, Hao Q. GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1735. [PMID: 36837365 PMCID: PMC9967453 DOI: 10.3390/ma16041735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/16/2023] [Accepted: 02/17/2023] [Indexed: 06/18/2023]
Abstract
A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 × 10-10 A to 1.26 × 10-9 A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A∙W-1 to 3.047 A∙W-1. The reasons for the improvement of the photodetectors' performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.
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Affiliation(s)
- Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Jinzhi Cui
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Zhihong Zhang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Xiaobing Hou
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Bingheng Meng
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Kexue Li
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Qun Hao
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
- School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China
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Wei K, Li B, Gong C, Zhu Z, Zhang Y, Liu M, Ren P, Pan X, Wang Y, Zhou J. Full near-ultraviolet response photoelectrochemical ultraviolet detector based on TiO 2nanocrystalline coated stainless steel mesh photoanode. NANOTECHNOLOGY 2021; 32:475503. [PMID: 34359054 DOI: 10.1088/1361-6528/ac1b57] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Accepted: 08/05/2021] [Indexed: 06/13/2023]
Abstract
In order to solve the 'ultraviolet (UV) filtering problem' caused by traditional sandwich-type structure in photoelectrochemical (PEC) UV detector, we design a special electrode based on stainless steel mesh, which integrates the light absorption layer and the electron collection electrode in a simple way. In combination with an UV-transparent quartz substrate, UV light can directly reach the active material. The improved detector shows good visible-blind, self-powered, and linear response characteristics. The serious recombination caused by metal electrode is suppressed by depositing a barrier layer. The optimized device exhibits a high photoresponse of 0.103 A W-1at 296 nm, a short recovery time of 250 ms, and very sensitive switching ability. Furthermore, the response range of the detector is expanded from 300 to 400 nm to the full near-UV region. Our work provides an efficient strategy to solve the key problem of the PEC UV detector.
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Affiliation(s)
- Kun Wei
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Baoping Li
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
| | - Chengshi Gong
- School of Electronic and Information Engineering, Lanzhou City University, Lanzhou 730070, People's Republic of China
| | - Ziran Zhu
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Yu Zhang
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
| | - Menghan Liu
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
| | - Peiling Ren
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
| | - Xiaojun Pan
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Youqing Wang
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jinyuan Zhou
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
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Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks. NANOMATERIALS 2021; 11:nano11020428. [PMID: 33567759 PMCID: PMC7914410 DOI: 10.3390/nano11020428] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2020] [Revised: 01/29/2021] [Accepted: 01/31/2021] [Indexed: 12/03/2022]
Abstract
Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.
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