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Mastalieva V, Neplokh V, Aybush A, Fedorov V, Yakubova A, Koval O, Gudovskikh A, Makarov S, Mukhin I. Laser-Activated Second Harmonic Generation in Flexible Membrane with Si Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091563. [PMID: 37177108 PMCID: PMC10180697 DOI: 10.3390/nano13091563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Revised: 04/30/2023] [Accepted: 05/02/2023] [Indexed: 05/15/2023]
Abstract
Nonlinear silicon photonics has a high compatibility with CMOS technology and therefore is particularly attractive for various purposes and applications. Second harmonic generation (SHG) in silicon nanowires (NWs) is widely studied for its high sensitivity to structural changes, low-cost fabrication, and efficient tunability of photonic properties. In this study, we report a fabrication and SHG study of Si nanowire/siloxane flexible membranes. The proposed highly transparent flexible membranes revealed a strong nonlinear response, which was enhanced via activation by an infrared laser beam. The vertical arrays of several nanometer-thin Si NWs effectively generate the SH signal after being exposed to femtosecond infrared laser irradiation in the spectral range of 800-1020 nm. The stable enhancement of SHG induced by laser exposure can be attributed to the functional modifications of the Si NW surface, which can be used for the development of efficient nonlinear platforms based on silicon. This study delivers a valuable contribution to the advancement of optical devices based on silicon and presents novel design and fabrication methods for infrared converters.
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Affiliation(s)
- Viktoriia Mastalieva
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Vladimir Neplokh
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
| | - Arseniy Aybush
- N.N. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences, Kosygin Street 4, 119991 Moscow, Russia
| | - Vladimir Fedorov
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Anastasiya Yakubova
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Olga Koval
- Moscow Institute of Physics and Technology, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Alexander Gudovskikh
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Sergey Makarov
- School Department of Physics and Engineering, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
- Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao 266000, China
| | - Ivan Mukhin
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
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Miroshnichenko AS, Neplokh V, Mukhin IS, Islamova RM. Silicone Materials for Flexible Optoelectronic Devices. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8731. [PMID: 36556538 PMCID: PMC9780939 DOI: 10.3390/ma15248731] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 12/02/2022] [Accepted: 12/05/2022] [Indexed: 06/17/2023]
Abstract
Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs based on arrays of III-V nanowires (NWs). In this review, we analyze the currently existing types of silicone materials and their main properties, which are used in optoelectronic device development.
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Affiliation(s)
- Anna S. Miroshnichenko
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
- ChemBio Cluster, ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
- Laboratory of Renewable Energy Sources, St. Petersburg Academic University, 8/3 Khlopina Str., St. Petersburg 194021, Russia
| | - Vladimir Neplokh
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
- ChemBio Cluster, ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
- High School of Engineering Physics, The Great St. Petersburg Polytechnical University, 29 Polytechnicheskaya Str., St. Petersburg 195251, Russia
| | - Ivan S. Mukhin
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
- ChemBio Cluster, ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
- Laboratory of Renewable Energy Sources, St. Petersburg Academic University, 8/3 Khlopina Str., St. Petersburg 194021, Russia
- High School of Engineering Physics, The Great St. Petersburg Polytechnical University, 29 Polytechnicheskaya Str., St. Petersburg 195251, Russia
| | - Regina M. Islamova
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
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Miroshnichenko AS, Deriabin KV, Baeva M, Kochetkov FM, Neplokh V, Fedorov VV, Mozharov AM, Koval OY, Krasnikov DV, Sharov VA, Filatov NA, Gets DS, Nasibulin AG, Makarov SV, Mukhin IS, Kukushkin VY, Islamova RM. Flexible Perovskite CsPbBr 3 Light Emitting Devices Integrated with GaP Nanowire Arrays in Highly Transparent and Durable Functionalized Silicones. J Phys Chem Lett 2021; 12:9672-9676. [PMID: 34590867 DOI: 10.1021/acs.jpclett.1c02611] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The architecture of transparent contacts is of utmost importance for creation of efficient flexible light-emitting devices (LEDs) and other deformable electronic devices. We successfully combined the newly synthesized transparent and durable silicone rubbers and the semiconductor materials with original fabrication methods to design LEDs and demonstrate their significant flexibility. We developed electrodes based on a composite GaP nanowire-phenylethyl-functionalized silicone rubber membrane, improved with single-walled carbon nanotube films for a hybrid poly(ethylene oxide)-metal-halide perovskite (CsPbBr3) flexible green LED. The proposed approach provides a novel platform for fabrication of flexible hybrid optoelectronic devices.
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Affiliation(s)
- Anna S Miroshnichenko
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Konstantin V Deriabin
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
| | - Maria Baeva
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Institute of Automation and Control Processes (IACP), Far Eastern Branch of Russian Academy of Sciences, 5 Ulitsa Radio, 690041 Vladivostok, Russian Federation
| | - Fedor M Kochetkov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Vladimir Neplokh
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Vladimir V Fedorov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Alexey M Mozharov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Olga Yu Koval
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Dmitry V Krasnikov
- Skolkovo Institute of Science and Technology, 30/1 Bolshoy Boulevard, 121205 Moscow, Russian Federation
| | - Vlad A Sharov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Nikita A Filatov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Dmitry S Gets
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
| | - Albert G Nasibulin
- Skolkovo Institute of Science and Technology, 30/1 Bolshoy Boulevard, 121205 Moscow, Russian Federation
- Aalto University, P.O. Box 151100, Espoo FI-00076, Finland
| | - Sergey V Makarov
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
| | - Ivan S Mukhin
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Vadim Yu Kukushkin
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
- South Ural State University, 76 Lenin Avenue, 454080 Chelyabinsk, Russian Federation
| | - Regina M Islamova
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
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Neplokh V, Fedorov V, Mozharov A, Kochetkov F, Shugurov K, Moiseev E, Amador-Mendez N, Statsenko T, Morozova S, Krasnikov D, Nasibulin AG, Islamova R, Cirlin G, Tchernycheva M, Mukhin I. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. NANOMATERIALS 2021; 11:nano11102549. [PMID: 34684990 PMCID: PMC8538214 DOI: 10.3390/nano11102549] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Revised: 09/14/2021] [Accepted: 09/21/2021] [Indexed: 12/19/2022]
Abstract
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.
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Affiliation(s)
- Vladimir Neplokh
- High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia; (V.F.); (I.M.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
- Correspondence:
| | - Vladimir Fedorov
- High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia; (V.F.); (I.M.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Alexey Mozharov
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Fedor Kochetkov
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Konstantin Shugurov
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Eduard Moiseev
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
- Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, 194100 St. Petersburg, Russia
| | - Nuño Amador-Mendez
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France; (N.A.-M.); (M.T.)
| | - Tatiana Statsenko
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (T.S.); (S.M.)
- N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia
| | - Sofia Morozova
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (T.S.); (S.M.)
- N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia
| | - Dmitry Krasnikov
- Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia; (D.K.); (A.G.N.)
| | - Albert G. Nasibulin
- Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia; (D.K.); (A.G.N.)
- Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland
| | - Regina Islamova
- Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - George Cirlin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
| | - Maria Tchernycheva
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France; (N.A.-M.); (M.T.)
| | - Ivan Mukhin
- High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia; (V.F.); (I.M.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (A.M.); (F.K.); (K.S.); (E.M.); (G.C.)
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Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films. NANOMATERIALS 2021; 11:nano11061503. [PMID: 34200237 PMCID: PMC8230151 DOI: 10.3390/nano11061503] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 05/13/2021] [Accepted: 06/01/2021] [Indexed: 01/30/2023]
Abstract
We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.
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Koval OY, Fedorov VV, Bolshakov AD, Fedina SV, Kochetkov FM, Neplokh V, Sapunov GA, Dvoretckaia LN, Kirilenko DA, Shtrom IV, Islamova RM, Cirlin GE, Tchernycheva M, Serov AY, Mukhin IS. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane. NANOMATERIALS 2020; 10:nano10112110. [PMID: 33114110 PMCID: PMC7690831 DOI: 10.3390/nano10112110] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Revised: 10/20/2020] [Accepted: 10/21/2020] [Indexed: 01/05/2023]
Abstract
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.
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Affiliation(s)
- Olga Yu. Koval
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Correspondence:
| | - Vladimir V. Fedorov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
| | - Alexey D. Bolshakov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- School of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia;
| | - Sergey V. Fedina
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Fedor M. Kochetkov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Vladimir Neplokh
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
| | - Georgiy A. Sapunov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Liliia N. Dvoretckaia
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Demid A. Kirilenko
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Igor V. Shtrom
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, Russia;
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - Regina M. Islamova
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - George E. Cirlin
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, Russia;
| | - Maria Tchernycheva
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris Sud, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau CEDEX, France;
| | - Alexey Yu. Serov
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - Ivan S. Mukhin
- School of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia;
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