Towards free-standing graphane: atomic hydrogen and deuterium bonding to nano-porous graphene

Demonstration of tritium adsorption on graphene

In this work, we report on studies of graphene exposed to tritium gas in a controlled environment. The single layer graphene on a SiO2/Si substrate was exposed to 400 mbar of T2, for a total time of ∼55 h. The resistivity of the graphene sample was measured in situ during tritium exposure using the van der Pauw method. We found that the sheet resistance increases by three orders of magnitude during the exposure, suggesting significant chemisorption of tritium. After exposure, the samples were characterised ex situ via spatio-chemical mapping with a confocal Raman microscope, to study the effect of tritium on the graphene structure (tritiation yielding T-graphene), as well as the homogeneity of modifications across the whole area of the graphene film. The Raman spectra after tritium exposure were comparable to previously observed results in hydrogen-loading experiments, carried out by other groups. By thermal annealing we also could demonstrate, using Raman spectral analysis, that the structural changes were largely reversible. Considering all observations, we conclude that the graphene film was at least partially tritiated during the tritium exposure, and that the graphene film by and large withstands the bombardment by electrons from the β-decay of tritium, as well as by energetic primary and secondary ions.

Homogeneous Spatial Distribution of Deuterium Chemisorbed on Free-Standing Graphene

Atomic deuterium (D) adsorption on free-standing nanoporous graphene obtained by ultra-high vacuum D2 molecular cracking reveals a homogeneous distribution all over the nanoporous graphene sample, as deduced by ultra-high vacuum Raman spectroscopy combined with core-level photoemission spectroscopy. Raman microscopy unveils the presence of bonding distortion, from the signal associated to the planar sp2 configuration of graphene toward the sp3 tetrahedral structure of graphane. The establishment of D–C sp3 hybrid bonds is also clearly determined by high-resolution X-ray photoelectron spectroscopy and spatially correlated to the Auger spectroscopy signal. This work shows that the low-energy molecular cracking of D2 in an ultra-high vacuum is an efficient strategy for obtaining high-quality semiconducting graphane with homogeneous uptake of deuterium atoms, as confirmed by this combined optical and electronic spectro-microscopy study wholly carried out in ultra-high vacuum conditions.

Gap Opening in Double-Sided Highly Hydrogenated Free-Standing Graphene

Conversion of free-standing graphene into pure graphane─where each C atom is sp³ bound to a hydrogen atom─has not been achieved so far, in spite of numerous experimental attempts. Here, we obtain an unprecedented level of hydrogenation (≈90% of sp³ bonds) by exposing fully free-standing nanoporous samples─constituted by a single to a few veils of smoothly rippled graphene─to atomic hydrogen in ultrahigh vacuum. Such a controlled hydrogenation of high-quality and high-specific-area samples converts the original conductive graphene into a wide gap semiconductor, with the valence band maximum (VBM) ∼ 3.5 eV below the Fermi level, as monitored by photoemission spectromicroscopy and confirmed by theoretical predictions. In fact, the calculated band structure unequivocally identifies the achievement of a stable, double-sided fully hydrogenated configuration, with gap opening and no trace of π states, in excellent agreement with the experimental results.

Physical and Chemical Activation of Graphene-Derived Porous Nanomaterials for Post-Combustion Carbon Dioxide Capture

Activation is commonly used to improve the surface and porosity of different kinds of carbon nanomaterials: activated carbon, carbon nanotubes, graphene, and carbon black. In this study, both physical and chemical activations are applied to graphene oxide by using CO₂ and KOH-based approaches, respectively. The structural and the chemical properties of the prepared activated graphene are deeply characterized by means of scanning electron microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectrometry and nitrogen adsorption. Temperature activation is shown to be a key parameter leading to enhanced CO₂ adsorption capacity of the graphene oxide-based materials. The specific surface area is increased from 219.3 m² g^-1 for starting graphene oxide to 762.5 and 1060.5 m² g^-1 after physical and chemical activation, respectively. The performance of CO₂ adsorption is gradually enhanced with the activation temperature for both approaches: for the best performances of a factor of 6.5 and 9 for physical and chemical activation, respectively. The measured CO₂ capacities are of 27.2 mg g^-1 and 38.9 mg g^-1 for the physically and chemically activated graphene, respectively, at 25 °C and 1 bar.

Deuterium Adsorption on Free-Standing Graphene

A suitable way to modify the electronic properties of graphene—while maintaining the exceptional properties associated with its two-dimensional (2D) nature—is its functionalisation. In particular, the incorporation of hydrogen isotopes in graphene is expected to modify its electronic properties leading to an energy gap opening, thereby rendering graphene promising for a widespread of applications. Hence, deuterium (D) adsorption on free-standing graphene was obtained by high-energy electron ionisation of D2 and ion irradiation of a nanoporous graphene (NPG) sample. This method allows one to reach nearly 50 at.% D upload in graphene, higher than that obtained by other deposition methods so far, towards low-defect and free-standing D-graphane. That evidence was deduced by X-ray photoelectron spectroscopy of the C 1s core level, showing clear evidence of the D-C sp3 bond, and Raman spectroscopy, pointing to remarkably clean and low-defect production of graphane. Moreover, ultraviolet photoelectron spectroscopy showed the opening of an energy gap in the valence band. Therefore, high-energy electron ionisation and ion irradiation is an outstanding method for obtaining low defect D-NPG with a high D upload, which is very promising for the fabrication of semiconducting graphane on large scale.