Positive and negative photoconductivity characteristics in CsPbBr3/graphene heterojunction

Selenophosphate Pb2P2Se6 Single Crystals Growth by Chemical Vapor Transport (CVT) Method for Radiation Detection

The heavy metal selenophosphate Pb2P2Se6 emerges as a promising room-temperature X-ray/γ-ray detectors due to its high resistivity, robust radiation-blocking capability, and outstanding carrier mobility-lifetime product, etc. However, the high activity of phosphides poses significant impediment to the synthesis and single crystal growth. In this work, we have prepared high-quality Pb2P2Se6 single crystals with using the chemical vapor transport (CVT) method. The XRD analysis combined with EDS result confirmed the uniform composition of the resulting as-grown single crystals, while UV-Vis-NIR transmittance spectra revealed the bandgap of 1.89 eV. Selected area electron diffraction patterns indicated the crystal belonged to the P21/c(14) space group. Additionally, the Au/Pb2P2Se6/Au device is fabricated, which exhibits a robust X-ray response with a sensitivity of 648.61 μC Gy-1 cm-2 at 400 V mm-1 under 50 kVp. Notably, the device also excels in alpha particle detection, boasting a resolution of ~14.48 % under a bias of 400 V bias. The hole mobility-lifetime product (μτ)h of Pb2P2Se6 is estimated to be ~2.58×10-5 cm2 V-1. The results underscore potential applications of Pb2P2Se6 crystal is in the field of the semiconductor radiation detectors.

All-inorganic lead halide perovskites for photocatalysis: a review

Nowadays, environmental pollution and the energy crisis are two significant concerns in the world, and photocatalysis is seen as a key solution to these issues. All-inorganic lead halide perovskites have been extensively utilized in photocatalysis and have become one of the most promising materials in recent years. The superior performance of all-inorganic lead halide perovskites distinguish them from other photocatalysts. Since pure lead halide perovskites typically have shortcomings, such as low stability, poor active sites, and ineffective carrier extraction, that restrict their use in photocatalytic reactions, it is crucial to enhance their photocatalytic activity and stability. Huge progress has been made to deal with these critical issues to enhance the effects of all-inorganic lead halide perovskites as efficient photocatalysts in a wide range of applications. In this manuscript, the synthesis methods of all-inorganic lead halide perovskites are discussed, and promising strategies are proposed for superior photocatalytic performance. Moreover, the research progress of photocatalysis applications are summarized; finally, the issues of all-inorganic lead halide perovskite photocatalytic materials at the current state and future research directions are also analyzed and discussed. We hope that this manuscript will provide novel insights to researchers to further promote the research on photocatalysis based on all-inorganic lead halide perovskites.

Combining negative photoconductivity and resistive switching towards in-memory logic operations

A family of rudorffites based on silver-bismuth-iodide shows a transition from a conventional positive photoconductivity (PPC) to an unusual negative photoconductivity (NPC) upon variation in the precursor stoichiometry while forming the rudorffites. The NPC has arisen in silver-rich rudorffites due to the generation of illumination-induced trap-states which prompted the recombination of charge carriers and thereby a decrease in the conductivity of the compounds. In addition to photoconductivity, sandwiched devices based on all the rudorffites exhibited resistive switching between a pristine high resistive state (HRS) and a low resistive state (LRS) under a suitable voltage pulse; the switching process, which is reversible, is associated with a memory phenomenon. The devices based on NPC-exhibiting rudorffites switched to the HRS under illumination as well. That is, the resistive state of the devices could be controlled through both electrical and optical inputs. We employed such interesting optoelectronic properties of NPC-exhibiting rudorffites to exhibit OR logic gate operation. Because the devices could function as a logic gate and store the resistive state as well, we concluded that the materials could be an ideal candidate for in-memory logic operations.

A facile covalent strategy for ultrafast negative photoconductance hybrid graphene/porphyrin-based photodetector

As a powerful complement to positive photoconductance (PPC), negative photoconductance (NPC) holds great potential for photodetector. However, the slow response of NPC relative to PPC devices limits their integration. Here, we propose a facile covalent strategy for an ultrafast NPC hybrid 2D photodetector. Our transistor-based graphene/porphyrin model device with a rise time of 0.2 ms and decay time of 0.3 ms has the fastest response time in the so far reported NPC hybrid photodetectors, which is attributed to efficient photogenerated charge transport and transfer. Both the photosensitive porphyrin with an electron-rich and large rigid structure and the built-in graphene frame with high carrier mobility are prone to the photogenerated charge transport. Especially, the intramolecular donor-acceptor system formed by graphene and porphyrin through covalent bonding promotes photoinduced charge transfer. This covalent strategy can be applied to other nanosystems for high-performance NPC hybrid photodetector.

A highly tunable photoelectric response of graphene field-effect transistor with lateral P-N junction in channel

This paper reports a highly tunable photoelectric response of graphene field-effect transistor (GFET) with lateral P-N junction in channel. The poly(sulfobetaine methacrylate) (PSBMA) provides strong N-type doping on graphene due to the dipole moment of pendent groups after ultraviolet annealing in high vacuum. A lateral P-N junction is introduced into the channel of the GFET by partially covering the graphene channel with PSBMA. With such P-N junction in the channel, the GFET exhibits a highly tunable photoelectric response over a wide range of exciting photon wavelength. With a lateral P-N junction in the channel, the polarity of photocurrent (I_ph) of the GFET switches three times as the back-gate voltage (V_BG) scan over two Dirac-point voltages. The underlying physical mechanism of photoelectric response is attributed to photovoltaic and photo-induced bolometric effect, which compete to dominatingI_phat variousV_BG. This provides a possible strategy for designing new phototransistors or optoelectronic device in the future.