1
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Blaga C, Labordet Álvarez Á, Balgarkashi A, Banerjee M, Fontcuberta I Morral A, Dimitrievska M. Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe 2 using multiwavelength excitation Raman scattering. NANOSCALE ADVANCES 2024:d4na00399c. [PMID: 39157051 PMCID: PMC11325308 DOI: 10.1039/d4na00399c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2024] [Accepted: 07/29/2024] [Indexed: 08/20/2024]
Abstract
Tungsten diselenide (WSe2) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe2 has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation and identification of phonon modes. This work presents a complete investigation of the vibrational properties of 1L to 5L flakes and bulk WSe2 using multi-wavelength Raman spectroscopy. We especially highlight measurements using 785 nm excitation, which have not been performed before. These allow us to solve inconsistences in the literature in terms of defect-activated non-Γ point single phonon modes and Breit-Wigner-Fano type resonance. We identify 35 Raman peaks per flake thickness, which we attribute to either one-phonon or multi-phonon modes, including two-phonon scattering due to a van Hove singularity (vHs). The measurements are in excellent agreement with the theoretical predictions. Using photoluminescence measurements, we identify photon-exciton coupling leading to resonant Raman scattering, suggesting wavelength laser excitations best suited for further investigations of specific WSe2 flake thicknesses. Finally, we report the observation of phonon-cascades for all WSe2 flake thicknesses, indicating strong phonon-electron interactions during early carrier relaxation processes in WSe2. This research provides a solid foundation and reference for future investigations of the vibrational properties of WSe2, paving the way for further development of this material towards applications.
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Affiliation(s)
- Claire Blaga
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Ángel Labordet Álvarez
- Nanomaterials Spectroscopy and Imaging Group, Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Material Science and Technology (EMPA) Ueberlandstrasse 129 8600 Duebendorf Switzerland
| | - Akshay Balgarkashi
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mitali Banerjee
- Laboratory of Quantum Physics, Topology and Correlations, Institute of Physics, School of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Institute of Physics, School of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mirjana Dimitrievska
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Nanomaterials Spectroscopy and Imaging Group, Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Material Science and Technology (EMPA) Ueberlandstrasse 129 8600 Duebendorf Switzerland
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2
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Dimitrievska M, Litvinchuk AP, Zakutayev A, Crovetto A. Phonons in Copper Diphosphide (CuP 2): Raman Spectroscopy and Lattice Dynamics Calculations. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:10649-10654. [PMID: 37313121 PMCID: PMC10258838 DOI: 10.1021/acs.jpcc.3c02108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 05/12/2023] [Indexed: 06/15/2023]
Abstract
Copper diphosphide (CuP2) is an emerging binary semiconductor with promising properties for energy conversion and storage applications. While functionality and possible applications of CuP2 have been studied, there is a curious gap in the investigation of its vibrational properties. In this work, we provide a reference Raman spectrum of CuP2, with a complete analysis of all Raman active modes from both experimental and theoretical perspectives. Raman measurements have been performed on polycrystalline CuP2 thin films with close to stoichiometric composition. Detailed deconvolution of the Raman spectrum with Lorentzian curves has allowed identification of all theoretically predicted Raman active modes (9Ag and 9Bg), including their positions and symmetry assignment. Furthermore, calculations of the phonon density of states (PDOS), as well as the phonon dispersions, provide a microscopic understanding of the experimentally observed phonon lines, in addition to the assignment to the specific lattice eigenmodes. We further provide the theoretically predicted positions of the infrared (IR) active modes, along with the simulated IR spectrum from density functional theory (DFT). Overall good agreement is found between the experimental and DFT-calculated Raman spectra of CuP2, providing a reference platform for future investigations on this material.
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Affiliation(s)
- Mirjana Dimitrievska
- Transport
at Nanoscale Interfaces Laboratory, Swiss
Federal Laboratories for Material Science and Technology (EMPA), Ueberlandstrasse 129, 8600 Duebendorf, Switzerland
| | - Alexander P. Litvinchuk
- Texas
Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5002, United States
| | - Andriy Zakutayev
- Materials
Science Center, National Renewable Energy
Laboratory, Golden, Colorado 80401, United States
| | - Andrea Crovetto
- Centre
for Nano Fabrication and Characterization (DTU Nanolab), Technical University of Denmark, 2800 Kongens Lyngby, Denmark
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3
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Escobar Steinvall S, Stutz EZ, Paul R, Zamani M, Leran JB, Dimitrievska M, Fontcuberta i Morral A. Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide. ACS APPLIED ENERGY MATERIALS 2022; 5:5298-5306. [PMID: 35647493 PMCID: PMC9131307 DOI: 10.1021/acsaem.1c02484] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Accepted: 09/28/2021] [Indexed: 05/15/2023]
Abstract
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (Zn3P2), an earth-abundant absorber material, is presented. First, we show how different morphologies, including nanowires, nanopyramids, and thin films, can be achieved by tuning the growth conditions and growth mechanisms. The growth conditions are also shown to greatly impact the defect structure and composition of the grown material, which can vary considerably from the ideal stoichiometry (Zn3P2). Finally, the functional properties are characterized. The direct band gap could accurately be determined at 1.50 ± 0.1 eV, and through complementary density functional theory calculations, we can identify a range of higher-order band gap transitions observed through valence electron energy loss spectroscopy and cathodoluminescence. Furthermore, we outline the formation of rotated domains inside of the material, which are a potential origin of defect transitions that have been long observed in zinc phosphide but not yet explained. The basic understanding provided reinvigorates the potential use of earth-abundant II-V semiconductors in photovoltaic technology. Moreover, the transferrable nanoscale growth approaches have the potential to be applied to other material systems, as they mitigate the constraints of substrate-material combinations causing interface defects.
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Affiliation(s)
- Simon Escobar Steinvall
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Center
for Analysis and Synthesis and NanoLund, Lund University, Box 124, 221 00 Lund, Sweden
| | - Elias Z. Stutz
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Rajrupa Paul
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Mahdi Zamani
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jean-Baptiste Leran
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Mirjana Dimitrievska
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Anna Fontcuberta i Morral
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Institute
of Physics, Ecole Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
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4
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Stutz EZ, Zamani M, Damry DA, Buswell L, Paul R, Escobar Steinvall S, Leran JB, Boland JL, Dimitrievska M, Fontcuberta I Morral A. Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber. MATERIALS ADVANCES 2022; 3:1295-1303. [PMID: 35178521 PMCID: PMC8784961 DOI: 10.1039/d1ma00922b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Accepted: 12/16/2021] [Indexed: 06/14/2023]
Abstract
Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth's crust, opening up a pathway for large deployment of solar cell alternatives to the silicon market. Here we provide a thorough study of the optical properties of single crystalline Zn3P2 thin films grown on (100) InP by molecular beam epitaxy. The films are slightly phosphorus-rich as determined by Rutherford backscattering. We elucidate two main radiative recombination pathways: one transition at approximately 1.52 eV attributed to zone-center band-to-band electronic transitions; and a lower-energy transition observed at 1.3 eV to 1.4 eV attributed to a defect band or band tail related recombination mechanisms. We believe phosphorus interstitials are likely at the origin of this band.
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Affiliation(s)
- Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Djamshid A Damry
- Photon Science Institute, Department of Electrical and Electronic Engineering, University of Manchester Alan Turing Building, Oxford Road Manchester M13 9PL UK
| | - Léa Buswell
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Simon Escobar Steinvall
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Jessica L Boland
- Photon Science Institute, Department of Electrical and Electronic Engineering, University of Manchester Alan Turing Building, Oxford Road Manchester M13 9PL UK
| | - Mirjana Dimitrievska
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
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5
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Stutz EZ, Ramanandan SP, Flór M, Paul R, Zamani M, Escobar Steinvall S, Sandoval Salaiza DA, Xifra Montesinos C, Spadaro MC, Leran JB, Litvinchuk AP, Arbiol J, Fontcuberta I Morral A, Dimitrievska M. Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn 3-xP 2+x). Faraday Discuss 2022; 239:202-218. [PMID: 36305553 PMCID: PMC9614774 DOI: 10.1039/d2fd00055e] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/05/2022]
Abstract
Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the performance of devices based on these materials. In this work, we investigate the effect of stoichiometry variations and defects on the structural and optoelectronic properties of monocrystalline zinc phosphide (Zn3P2), a promising compound for photovoltaic applications. We use experimental methods, such as electron and X-ray diffraction and Raman spectroscopy, along with density functional theory calculations, to showcase the favorable creation of P interstitial defects over Zn vacancies in P-rich and Zn-poor compositional regions. Photoluminescence and absorption measurements show that these defects create additional energy levels at about 180 meV above the valence band. Furthermore, they lead to the narrowing of the bandgap, due to the creation of band tails in the region of around 10–20 meV above the valence and below the conduction band. The ability of zinc phosphide to form off-stoichiometric compounds provides a new promising opportunity for tunable functionality that benefits applications. In that regard, this study is crucial for the further development of zinc phosphide and its application in optoelectronic and photovoltaic devices, and should pave the way for defect engineering in this kind of material. Zinc phosphide (Zn3P2) is a promising material for photovoltaic applications. Here, we investigate the effect of stoichiometry variations and defects on the structural and optoelectronic properties of monocrystalline Zn3P2.![]()
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Affiliation(s)
- Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Santhanu P Ramanandan
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Mischa Flór
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Simon Escobar Steinvall
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Diego Armando Sandoval Salaiza
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Clàudia Xifra Montesinos
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Maria Chiara Spadaro
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Alexander P Litvinchuk
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5002, USA
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona, Catalonia, Spain
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Mirjana Dimitrievska
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
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6
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Flór M, Stutz EZ, Ramanandan SP, Zamani M, Paul R, Leran JB, Litvinchuk AP, Fontcuberta I Morral A, Dimitrievska M. Raman tensor of zinc-phosphide (Zn 3P 2): from polarization measurements to simulation of Raman spectra. Phys Chem Chem Phys 2021; 24:63-72. [PMID: 34851345 PMCID: PMC8694062 DOI: 10.1039/d1cp04322f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2021] [Accepted: 11/23/2021] [Indexed: 11/29/2022]
Abstract
Zinc phosphide (Zn3P2) is a II-V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spectroscopy can be effectively used for defect characterization. However, the Raman tensor of Zn3P2, which determines the intensity of Raman peaks and anisotropy of inelastic light scattering, is still unknown. In this paper, we use angle-resolved polarization Raman measurements on stoichiometric monocrystalline Zn3P2 thin films to obtain the Raman tensor of Zn3P2. This has allowed determination of the Raman tensor elements characteristic for the A1g, B1g and B2g vibrational modes. These results have been compared with the theoretically obtained Raman tensor elements and simulated Raman spectra from the lattice-dynamics calculations using first-principles force constants. Excellent agreement is found between the experimental and simulated Raman spectra of Zn3P2 for various polarization configurations, providing a platform for future characterization of the defects in this material.
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Affiliation(s)
- Mischa Flór
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Santhanu P Ramanandan
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Alexander P Litvinchuk
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5002, USA
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Mirjana Dimitrievska
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
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7
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Spadaro MC, Escobar Steinvall S, Dzade NY, Martí-Sánchez S, Torres-Vila P, Stutz EZ, Zamani M, Paul R, Leran JB, Fontcuberta I Morral A, Arbiol J. Rotated domains in selective area epitaxy grown Zn 3P 2: formation mechanism and functionality. NANOSCALE 2021; 13:18441-18450. [PMID: 34751695 PMCID: PMC8900489 DOI: 10.1039/d1nr06190a] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Accepted: 10/21/2021] [Indexed: 05/28/2023]
Abstract
Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, e.g. via the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that Zn3P2 nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100). We detect the presence of two stable rotated crystal domains that coexist in the structure. They are due to a change in the growth facet, which originates either from the island formation and merging in the initial stages of growth or lateral overgrowth. These domains have been visualized through 3D atomic models and confirmed with image simulations of the atomic scale electron micrographs. Density functional theory simulations describe the rotated domains' formation mechanism and demonstrate their lattice-matched epitaxial relation. In addition, the energies of the shallow states predicted closely agree with transition energies observed by experimental studies and offer a potential origin for these defect transitions. Our study represents an important step forward in the understanding of Zn3P2 and thus for the realisation of solar cells to respond to the present call for sustainable photovoltaic technology.
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Affiliation(s)
- Maria Chiara Spadaro
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
| | - Simon Escobar Steinvall
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Nelson Y Dzade
- School of Chemistry, Cardiff University, Main Building, Park Place, CF10 3AT Cardiff, UK
- Department of Energy and Mineral Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
| | - Pol Torres-Vila
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
| | - Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
- ICREA, Pg. Lluís Companys 23, 08010, Barcelona, Catalonia, Spain
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8
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Oh SH, Kim Y. Cubic ZnP 2 nanowire growth catalysed by bismuth. CrystEngComm 2021. [DOI: 10.1039/d1ce00029b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The ZnP2 nanowires catalysed by bismuth had a cubic γ-ZnP2 structure, which is known to be stable only at pressures higher than 1.5 GPa, and its existence is a matter of debate.
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Affiliation(s)
| | - Yong Kim
- Department of Physics
- Dong-A University
- Sahagu
- Korea
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