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Zhang X, Huang C, Li Z, Fu J, Tian J, Ouyang Z, Yang Y, Shao X, Han Y, Qiao Z, Zeng H. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts. Nat Commun 2024; 15:4619. [PMID: 38816431 PMCID: PMC11139895 DOI: 10.1038/s41467-024-49058-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Accepted: 05/23/2024] [Indexed: 06/01/2024] Open
Abstract
Since the first report on single-layer MoS2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.
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Affiliation(s)
- Xiaodong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Chenxi Huang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Zeyu Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Jiaran Tian
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Zhuping Ouyang
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Yuliang Yang
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Xiang Shao
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Yulei Han
- Department of Physics, Fuzhou University, Fuzhou, China
| | - Zhenhua Qiao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China.
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2
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Borhade PS, Chen T, Chen DR, Chen YX, Yao YC, Yen ZL, Tsai CH, Hsieh YP, Hofmann M. Self-Expansion Based Multi-Patterning for 2D Materials Fabrication beyond the Lithographical Limit. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311209. [PMID: 38098342 DOI: 10.1002/smll.202311209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 12/04/2023] [Indexed: 05/30/2024]
Abstract
Two-dimensional (2D) materials are promising successors for silicon transistor channels in ultimately scaled devices, necessitating significant research efforts to study their behavior at nanoscopic length scales. Unfortunately, current research has limited itself to direct patterning approaches, which limit the achievable resolution to the diffraction limit and introduce unwanted defects into the 2D material. The potential of multi-patterning to fabricate 2D materials features with unprecedented precision and low complexity at large scale is demonstrated here. By combining lithographic patterning of a mandrel and bottom-up self-expansion, this approach enables pattern resolution one order of magnitude below the lithographical resolution. In-depth characterization of the self-expansion double patterning (SEDP) process reveals the ability to manipulate the critical dimension with nanometer precision through a self-limiting and temperature-controlled oxidation process. These results indicate that the SEDP process can regain the quality and morphology of the 2D material, as shown by high-resolution microscopy and optical spectroscopy. This approach is shown to open up new avenues for research into high-performance, ultra-scaled 2D materials devices for future electronics.
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Affiliation(s)
- Poonam Subhash Borhade
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Tawat Chen
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Ding-Rui Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
| | - Yu-Xiang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
| | - Yu-Chi Yao
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Zhi-Long Yen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
| | - Chun Hsiung Tsai
- Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, 30092, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
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3
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Minj A, Mootheri V, Banerjee S, Nalin Mehta A, Serron J, Hantschel T, Asselberghs I, Goux L, Kar GS, Heyns M, Lin DHC. Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS NANO 2024; 18:10653-10666. [PMID: 38556983 DOI: 10.1021/acsnano.4c03080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor technology roadmap. Presently, the search for electrically active defects, in terms of both their density of energy states and their spatial distribution, has turned out to be of paramount importance in synthetic transition metal dichalcogenides layers, as they are suspected of severely inhibiting these devices from achieving their highest performance. Although advanced microscopy tools have allowed the direct detection of physical defects such as grain boundaries and point defects, their implementation at the device scale to assess the active defect distribution and their impact on field-induced channel charge modulation and current transport is strictly restrained. Therefore, it becomes critical to directly probe the gate modulation effect on the carrier population at the nanoscale of an FET channel, with the objective to establish a direct correlation with the device characteristics. Here, we have investigated the active channel in a monolayer MoS2 FET through in situ scanning probe microscopy, namely, Kelvin probe force microscopy and scanning capacitance microscopy, to directly identify active defect sites and to improve our understanding of the contribution of grain boundaries, bilayer islands, and defective grain domains to channel conductance.
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Affiliation(s)
| | - Vivek Mootheri
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium
| | | | | | | | | | | | | | | | - Marc Heyns
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium
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4
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Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38422472 DOI: 10.1021/acsami.3c18332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The high contact resistance of transition metal dichalcogenide (TMD)-based devices is receiving considerable attention due to its limitation on electronic performance. The mechanism of Fermi level (EF) pinning, which causes the high contact resistance, is not thoroughly understood to date. In this study, the metal (Ni and Ag)/Mo-TMD surfaces and interfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunneling microscopy and spectroscopy, and density functional theory systematically. Ni and Ag form covalent and van der Waals (vdW) interfaces on Mo-TMDs, respectively. Imperfections are detected on Mo-TMDs, which lead to electronic and spatial variations. Gap states appear after the adsorption of single and two metal atoms on Mo-TMDs. The combination of the interface reaction type (covalent or vdW), the imperfection variability of the TMD materials, and the gap states induced by contact metals with different weights are concluded to be the origins of EF pinning.
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Affiliation(s)
- Xinglu Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Seong Yeoul Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
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5
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Henck H, Mauro D, Domaretskiy D, Philippi M, Memaran S, Zheng W, Lu Z, Shcherbakov D, Lau CN, Smirnov D, Balicas L, Watanabe K, Taniguchi T, Fal'ko VI, Gutiérrez-Lezama I, Ubrig N, Morpurgo AF. Light sources with bias tunable spectrum based on van der Waals interface transistors. Nat Commun 2022; 13:3917. [PMID: 35798736 PMCID: PMC9263129 DOI: 10.1038/s41467-022-31605-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Accepted: 06/13/2022] [Indexed: 11/09/2022] Open
Abstract
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -by suitably selecting the material forming the interfaces- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
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Affiliation(s)
- Hugo Henck
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Diego Mauro
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Wenkai Zheng
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Zhengguang Lu
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Dmitry Shcherbakov
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Vladimir I Fal'ko
- National Graphene Institute, University of Manchester, Booth Street East, M13 9PL, Manchester, UK.,Henry Royce Institute for Advanced Materials, M13 9PL, Manchester, UK
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland. .,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland. .,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.
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6
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Knobloch T, Uzlu B, Illarionov YY, Wang Z, Otto M, Filipovic L, Waltl M, Neumaier D, Lemme MC, Grasser T. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. NATURE ELECTRONICS 2022; 5:356-366. [PMID: 35783488 PMCID: PMC9236902 DOI: 10.1038/s41928-022-00768-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Accepted: 04/22/2022] [Indexed: 06/02/2023]
Abstract
Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation. Here, we show that device stability in graphene-based field-effect transistors with amorphous gate oxides can be improved by Fermi-level tuning. We deliberately tune the Fermi level of the channel to maximize the energy distance between the charge carriers in the channel and the defect bands in the amorphous aluminium gate oxide. Charge trapping is highly sensitive to the energetic alignment of the Fermi level of the channel with the defect band in the insulator, and thus, our approach minimizes the amount of electrically active border traps without the need to reduce the total number of traps in the insulator.
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Affiliation(s)
| | - Burkay Uzlu
- AMO GmbH, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
| | - Yury Yu. Illarionov
- Institute for Microelectronics, TU Wien, Vienna, Austria
- Ioffe Institute, Saint Petersburg, Russia
| | | | | | - Lado Filipovic
- Institute for Microelectronics, TU Wien, Vienna, Austria
| | - Michael Waltl
- Christian Doppler Laboratory for Single-Defect Spectroscopy in Semiconductor Devices at the Institute for Microelectronics, TU Wien, Vienna, Austria
| | - Daniel Neumaier
- AMO GmbH, Aachen, Germany
- Chair of Smart Sensor Systems, University of Wuppertal, Wuppertal, Germany
| | - Max C. Lemme
- AMO GmbH, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Aachen, Germany
| | - Tibor Grasser
- Institute for Microelectronics, TU Wien, Vienna, Austria
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