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Desai T, Goud RSP, Dongale TD, Gurnani C. Evaluation of Nanostructured NiS 2 Thin Films from a Single-Source Precursor for Flexible Memristive Devices. ACS OMEGA 2023; 8:48873-48883. [PMID: 38162788 PMCID: PMC10753740 DOI: 10.1021/acsomega.3c06331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 10/18/2023] [Accepted: 11/08/2023] [Indexed: 01/03/2024]
Abstract
Herein, we report the first demonstration of a single-step, in situ growth of NiS2 nanostructures from a single-source precursor onto a flexible substrate as a versatile platform for an effective nonvolatile memristor. The low temperature, solution-processed deposition of NiS2 thin films exhibits a wide band gap range, spherical-flower-like morphology with high surface area and porosity, and negligible surface roughness. Moreover, the fabricated Au/NiS2/ITO/PET memristor device reveals reproducible bipolar resistive switching (RS) at low operational voltages under both flat and bending conditions. The flexible device shows stable RS behavior for multiple cycles with a good memory window (∼102) and data retention of up to 104 s. The switching of a device between a high-resistance state and a low-resistance state is attributed to the filamentary conduction based on sulfur ion migration and sulfur vacancies and plays a key role in the outstanding memristive performance of the device. Consequently, this work provides a simple, scalable, solution-processed route to fabricate a flexible device with potential applications in next-generation neuromorphic computing and wearable electronics.
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Affiliation(s)
- Trishala
R. Desai
- Department
of Chemistry, Ecole Centrale School of Engineering, Mahindra University, Hyderabad 500043, India
| | - R. Sai Prasad Goud
- Centre
for Advanced Studies in Electronic Sciences and Technology, University of Hyderabad, Hyderabad 500046, India
| | - Tukaram D. Dongale
- Computational
Electronics and Nanoscience Research Laboratory, School of Nanoscience
and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Chitra Gurnani
- Department
of Chemistry, Ecole Centrale School of Engineering, Mahindra University, Hyderabad 500043, India
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Han Y, Chae M, Choi D, Song I, Ko C, Cresti A, Theodorou C, Joo MK. Negative Differential Interlayer Resistance in WSe 2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58605-58612. [PMID: 38051158 DOI: 10.1021/acsami.3c13699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The inherent interlayer resistance in two-dimensional (2D) van der Waals (vdW) multilayers is expected to significantly influence the carrier density profile along the thickness, provoking spatial modification and separation of the conducting channel inside the multilayers, in conjunction with the thickness-dependent carrier mobility. However, the effect of the interlayer resistance on the variation in the carrier density profile and its direction along the thickness under different electrostatic bias conditions has been elusive. Here, we reveal the presence of a negative differential interlayer resistance (NDIR) in WSe2 multilayers by considering various contact electrode configurations: (i) bottom contact, (ii) top contact, and (iii) vertical double-side contact (VDC). The contact-structure-dependent shape modification of the transconductance clearly manifests the redistribution of carrier density and indicates the direction of the conducting channel migration along the thickness. Furthermore, the distinct characteristic of the electrically tunable NDIR in 2D WSe2 multilayers is revealed by the observed discrepancy between the top- and bottom-channel resistances determined by four-probe measurements with VDC. Our results provide an optimized device layout and further insights into the distinct carrier transport mechanism in 2D vdW multilayers.
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Affiliation(s)
- Yeongseo Han
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Minji Chae
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Dahyun Choi
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Inseon Song
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Changhyun Ko
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Alessandro Cresti
- Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble 38000, France
| | - Christoforos Theodorou
- Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble 38000, France
| | - Min-Kyu Joo
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
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Torres F, Basaran AC, Schuller IK. Thermal Management in Neuromorphic Materials, Devices, and Networks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205098. [PMID: 36067752 DOI: 10.1002/adma.202205098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2022] [Revised: 08/30/2022] [Indexed: 06/15/2023]
Abstract
Machine learning has experienced unprecedented growth in recent years, often referred to as an "artificial intelligence revolution." Biological systems inspire the fundamental approach for this new computing paradigm: using neural networks to classify large amounts of data into sorting categories. Current machine-learning schemes implement simulated neurons and synapses on standard computers based on a von Neumann architecture. This approach is inefficient in energy consumption, and thermal management, motivating the search for hardware-based systems that imitate the brain. Here, the present state of thermal management of neuromorphic computing technology and the challenges and opportunities of the energy-efficient implementation of neuromorphic devices are considered. The main features of brain-inspired computing and quantum materials for implementing neuromorphic devices are briefly described, the brain criticality and resistive switching-based neuromorphic devices are discussed, the energy and electrical considerations for spiking-based computation are presented, the fundamental features of the brain's thermal regulation are addressed, the physical mechanisms for thermal management and thermoelectric control of materials and neuromorphic devices are analyzed, and challenges and new avenues for implementing energy-efficient computing are described.
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Affiliation(s)
- Felipe Torres
- Physics Department, Faculty of Science, University of Chile, 653, Santiago, 7800024, Chile
- Center of Nanoscience and Nanotechnology (CEDENNA), Av. Ecuador 3493, Santiago, 9170124, Chile
| | - Ali C Basaran
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, 92093, USA
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, 92093, USA
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Khot AC, Dongale TD, Nirmal KA, Sung JH, Lee HJ, Nikam RD, Kim TG. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:10546-10557. [PMID: 35179364 DOI: 10.1021/acsami.1c23268] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning applications by fabricating a complementary metal-oxide-semiconductor (CMOS)-compatible Ag/a-BN/Pt memory device. The redox-active Ag and boron vacancies enhance the mixed electrochemical metallization and valence change conduction mechanism. The synthesized a-BN switching layer was characterized using several analyses. The fabricated memory devices exhibited bipolar resistive switching with low set and reset voltages (+0.8 and -2 V, respectively) and a small operating voltage distribution. In addition, the switching voltages of the device were modeled using a time-series analysis, for which the Holt's exponential smoothing technique provided good modeling and prediction results. According to the analytical calculations, the fabricated Ag/a-BN/Pt device was found to be memristive, and its MRS ability was investigated by varying the compliance current. The multilevel states demonstrated a uniform resistance distribution with a high endurance of up to 104 direct current (DC) cycles and memory retention characteristics of over 106 s. Conductive atomic force microscopy was performed to clarify the resistive switching mechanism of the device, and the likely mixed electrochemical metallization and valence change mechanisms involved therein were discussed based on experimental results. The Ag/a-BN/Pt memristive devices mimicked potentiation/depression and spike-timing-dependent plasticity-based Hebbian-learning rules with a high pattern accuracy (90.8%) when implemented in neural network simulations.
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Affiliation(s)
- Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tukaram D Dongale
- School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ji Hoon Sung
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ho Jin Lee
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Revannath D Nikam
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
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Shen C, Gao X, Chen C, Ren S, Xu JL, Xia YD, Wang SD. ZnO nanowire optoelectronic synapse for neuromorphic computing. NANOTECHNOLOGY 2021; 33:065205. [PMID: 34736234 DOI: 10.1088/1361-6528/ac3687] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Accepted: 11/04/2021] [Indexed: 06/13/2023]
Abstract
Artificial synapses that integrate functions of sensing, memory and computing are highly desired for developing brain-inspired neuromorphic hardware. In this work, an optoelectronic synapse based on the ZnO nanowire (NW) transistor is achieved, which can be used to emulate both the short-term and long-term synaptic plasticity. Synaptic potentiation is present when the device is stimulated by light pulses, arising from the light-induced O2desorption and the persistent photoconductivity behavior of the ZnO NW. On the other hand, synaptic depression occurs when the device is stimulated by electrical pulses in dark, which is realized by introducing a charge trapping layer in the gate dielectric to trap carriers. Simulation of a neural network utilizing the ZnO NW synapses is carried out, demonstrating a high recognition accuracy over 90% after only 20 training epochs for recognizing the Modified National Institute of Standards and Technology digits. The present nanoscale optoelectronic synapse has great potential in the development of neuromorphic visual systems.
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Affiliation(s)
- Cong Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Xu Gao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Cheng Chen
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Soochow University, Suzhou, Jiangsu 215006, People's Republic of China
| | - Shan Ren
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Jian-Long Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
| | - Yi-Dong Xia
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Sui-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa 999078, Macau, People's Republic of China
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