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Shugabaev T, Gridchin VO, Komarov SD, Kirilenko DA, Kryzhanovskaya NV, Kotlyar KP, Reznik RR, Girshova YI, Nikolaev VV, Kaliteevski MA, Cirlin GE. Photoluminescence Redistribution of InGaN Nanowires Induced by Plasmonic Silver Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13061069. [PMID: 36985964 PMCID: PMC10051209 DOI: 10.3390/nano13061069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 03/09/2023] [Accepted: 03/14/2023] [Indexed: 05/14/2023]
Abstract
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles induce the redistribution of room temperature photoluminescence between short-wavelength and long-wavelength peaks of InGaN nanowires. It is defined that short-wavelength maxima decreased by 20%, whereas the long-wavelength maxima increased by 19%. We attribute this phenomenon to the energy transfer and enhancement between the coalesced part of the NWs with 10-13% In content and the tips above with an In content of about 20-23%. A proposed Fröhlich resonance model for silver NPs surrounded by a medium with refractive index of 2.45 and spread 0.1 explains the enhancement effect, whereas the decreasing of the short-wavelength peak is associated with the diffusion of charge carriers between the coalesced part of the NWs and the tips above.
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Affiliation(s)
- Talgat Shugabaev
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia; (T.S.); (V.O.G.); (R.R.R.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Vladislav O. Gridchin
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia; (T.S.); (V.O.G.); (R.R.R.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia
| | - Sergey D. Komarov
- Department of Physics, Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia
| | | | - Natalia V. Kryzhanovskaya
- Department of Physics, Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia
| | - Konstantin P. Kotlyar
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia; (T.S.); (V.O.G.); (R.R.R.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia
| | - Rodion R. Reznik
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia; (T.S.); (V.O.G.); (R.R.R.)
| | - Yelizaveta I. Girshova
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Valentin V. Nikolaev
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Michael A. Kaliteevski
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - George E. Cirlin
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia; (T.S.); (V.O.G.); (R.R.R.)
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia
- Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia;
- Correspondence:
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Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. NANOMATERIALS 2022; 12:nano12142341. [PMID: 35889566 PMCID: PMC9320236 DOI: 10.3390/nano12142341] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 06/29/2022] [Accepted: 07/05/2022] [Indexed: 01/10/2023]
Abstract
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.
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