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Guo X, Yang H, Mo X, Bai R, Wang Y, Han Q, Han S, Sun Q, Zhang DW, Hu S, Ji L. Modulated wafer-scale WS 2 films based on atomic-layer-deposition for various device applications. RSC Adv 2023; 13:14841-14848. [PMID: 37197184 PMCID: PMC10184003 DOI: 10.1039/d3ra00933e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Accepted: 05/09/2023] [Indexed: 05/19/2023] Open
Abstract
Tungsten disulfide (WS2) is promising for potential applications in transistors and gas sensors due to its high mobility and high adsorption of gas molecules onto edge sites. This work comprehensively studied the deposition temperature, growth mechanism, annealing conditions, and Nb doping of WS2 to prepare high-quality wafer-scale N- and P-type WS2 films by atomic layer deposition (ALD). It shows that the deposition and annealing temperature greatly influence the electronic properties and crystallinity of WS2, and insufficient annealing will seriously reduce the switch ratio and on-state current of the field effect transistors (FETs). Besides, the morphologies and carrier types of WS2 films can be controlled by adjusting the processes of ALD. The obtained WS2 films and the films with vertical structures were used to fabricate FETs and gas sensors, respectively. Among them, the Ion/Ioff ratio of N- and P-type WS2 FETs is 105 and 102, respectively, and the response of N- and P-type gas sensors is 14% and 42% under 50 ppm NH3 at room temperature, respectively. We have successfully demonstrated a controllable ALD process to modify the morphology and doping behavior of WS2 films with various device functionalities based on acquisitive characteristics.
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Affiliation(s)
- Xiangyu Guo
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Hanjie Yang
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Xichao Mo
- School of Physical Science and Technology, Lanzhou University Lanzhou 730000 China
| | - Rongxu Bai
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Yanrong Wang
- School of Physical Science and Technology, Lanzhou University Lanzhou 730000 China
| | - Qi Han
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Sheng Han
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Qingqing Sun
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - David W Zhang
- School of Microelectronics, Fudan University Shanghai 200433 China
| | - Shen Hu
- School of Microelectronics, Fudan University Shanghai 200433 China
- Jiashan Fudan Institute Jiashan 314100 China
| | - Li Ji
- School of Microelectronics, Fudan University Shanghai 200433 China
- Hubei Yangtz Memory Laboratories Wuhan 430205 China
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Jia X, Cheng Z, Han B, Cheng X, Wang Q, Ran Y, Xu W, Li Y, Gao P, Dai L. High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS 2 and p-MoTe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207927. [PMID: 36748299 DOI: 10.1002/smll.202207927] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 01/18/2023] [Indexed: 05/11/2023]
Abstract
In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS2 and p-MoTe2 grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO2 is used as the gate dielectric. An Al2 O3 seed layer is used to protect the MoS2 from heavily n-doping in the later-on atomic layer deposition process. P-MoTe2 FET is intentionally designed as the upper layer. Because p-doping of MoTe2 results from oxygen and water in the air, this design can guarantee a higher hole density of MoTe2 . An HfO2 capping layer is employed to further balance the transfer curves of n- and p-channel FETs and improve the performance of the inverter. The typical gain and power consumption of the CMOS devices are about 4.2 and 0.11 nW, respectively, at VDD of 1 V. The statistical results show that the CMOS array is with high device yield (60%) and an average voltage gain value of about 3.6 at VDD of 1 V. This work demonstrates the advantage of two-dimensional semi-conductive transition metal dichalcogenides in fabricating high-density integrated circuits.
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Affiliation(s)
- Xionghui Jia
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Zhixuan Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Bo Han
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Xing Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Qi Wang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yuqia Ran
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Wanjin Xu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yanping Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Gao
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing, 100871, China
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