Conversion of 2-dimensional GaSe to 2-dimensionalβ-Ga2O3by thermal oxidation

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates precise engineering of material properties and scalable manufacturing processes. The ability to oxidize Si to form silicon dioxide (SiO2) was crucial for the adoption of Si in modern technologies. Here, we report on the thermal oxidation of the 2DSEM gallium selenide (GaSe). The nanometer-thick layers are grown by molecular beam epitaxy on transparent sapphire (Al2O3) and feature a centro-symmetric polymorph of GaSe. Thermal annealing of the layers in an oxygen-rich environment promotes the chemical transformation and full conversion of GaSe into a thin layer of crystalline Ga2O3, paralleled by the formation of coherent Ga2O3/Al2O3 interfaces. Versatile functionalities are demonstrated in photon sensors based on GaSe and Ga2O3, ranging from electrical insulation to unfiltered deep ultraviolet optoelectronics, unlocking the technological potential of GaSe nanostructures and their amorphous and crystalline oxides.

The Influence of Process Parameters on the Microstructural Properties of Spray-Pyrolyzed β-Ga2O3

In this work, the deposition of β-Ga₂O₃ microstructures and thin films was performed with Ga(NO₃)₃ solutions by ultrasonic nebulization and spray coating as low-cost techniques. By changing the deposition parameters, the shape of β-Ga₂O₃ microstructures was controlled. Micro-spheres were obtained by ultrasonic nebulization. Micro-flakes and vortices were fabricated by spray coating aqueous concentrated and diluted precursor solutions, respectively. Roundish flakes were achieved from water-ethanol mixtures, which were rolled up into tubes by increasing the number of deposition cycles. Increasing the ethanol-to-water ratio allows continuous thin films at an optimal Ga(NO₃)₃ concentration of 0.15 M and a substrate temperature of 190 °C to be formed. The monoclinic β-Ga₂O₃ phase was achieved by thermal annealing at 1000 °C in an ambient atmosphere. Scanning electronic microscopy (SEM), X-ray diffraction (XRD), and UV-Raman spectroscopy were employed to characterize these microstructures. In the XRD study, in addition to the phase information, the residual stress values were determined using the sin²(ψ) method. Raman spectroscopy confirms that the β-Ga₂O₃ phase and relative shifts of the Raman modes of the different microstructures can partially be assigned to residual stress. The high-frequency Raman modes proved to be more sensitive to shifting and broadening than the low-frequency Raman modes.