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He SM, Zhuang JY, Chen CF, Liao RK, Lo ST, Lin YF, Su CY. Plasma-Driven Selenization for Electrical Property Enhancement in Janus 2D Materials. SMALL METHODS 2024:e2400150. [PMID: 38660826 DOI: 10.1002/smtd.202400150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 03/21/2024] [Indexed: 04/26/2024]
Abstract
The recent emergence of Janus 2D materials like SnSSe, derived from SnS2, reveals unique electrical and optical features, such as asymmetrical electronic structure, enhanced carrier mobility, and tunable bandgap. Previous theoretical studies have discuss the electronic properties of Janus SnSSe, but experimental evidence is limited. This study presents a two-step method for synthesizing Janus SnSSe, involving hydrogen plasma treatment and in situ selenization. Optimized conditions (38 W, 1.5 min, 250 °C) are determined using Raman spectroscopy and AFM analysis. XPS confirmed SnSSe's elemental composition, while KPFM reveals a significant reduction in the work function (from 5.26 down to 5.14 eV) for the first time, indicating asymmetrically induced n-type doping. Finally, field-effect transistors (FETs) derived from SnSSe exhibited significantly enhanced mobility and on-current, as well as n-type doping, compared to SnS2-based FETs. These findings lay a crucial foundation for developing high-performance 2D electronic and optoelectronic devices.
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Affiliation(s)
- Shih-Ming He
- Optical Sciences Center, National Central University, Taoyuan, 32001, Taiwan
| | - Jia-Yung Zhuang
- Department of Mechanical Engineering, National Central University, Taoyuan, 32001, Taiwan
| | - Ciao-Fen Chen
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Ren-Kuei Liao
- Department of Mechanical Engineering, National Central University, Taoyuan, 32001, Taiwan
| | - Shun-Tsung Lo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Ching-Yuan Su
- Optical Sciences Center, National Central University, Taoyuan, 32001, Taiwan
- Department of Mechanical Engineering, National Central University, Taoyuan, 32001, Taiwan
- Graduate Institute of Energy Engineering, National Central University, Taoyuan, 32001, Taiwan
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Xu Z, Xia Q, Zhang L, Gao G. A van der Waals p-n heterostructure of GaSe/SnS 2: a high thermoelectric figure of merit and strong anisotropy. NANOSCALE 2024; 16:2513-2521. [PMID: 38205870 DOI: 10.1039/d3nr05284b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
In recent years, van der Waals heterostructures (vdWHs) with controllable and peculiar properties have attracted extensive attention in the fields of electronics, optoelectronics, spintronics and electrochemistry. However, vdWHs with good thermoelectric performance are few due to the complex coupling of thermoelectric coefficients. Here, we employ density functional theory and Boltzmann's transport equation to explore the thermoelectric properties of the p-n vdWH of GaSe/SnS2, which has been experimentally observed to exhibit high performance as an optoelectronic device. We reveal that GaSe/SnS2 possesses strong anisotropy in terms of electronic transport resulting from the anisotropic carrier relaxation time. The longer carrier relaxation time in the y-direction for n-type induces a high power factor of 0.084 W m-1 K-2 at 300 K, while it is only 0.0087 W m-1 K-2) in the x-direction. The strong coupling of low-mid frequency phonon branches and the relatively weak Sn-S bond-induced anharmonicity hinder the phonon transport, which results in the lattice thermal conductivity of GaSe/SnS2 (14.61 and 15.43 W m-1 K-1 along the x- and y-directions at 300 K) being much smaller than the average value of GaSe and SnS2 (43.44 W m-1 K-1 at 300 K). The optimal thermoelectric figure of merit at 700 K for GaSe/SnS2 reaches 2.99, which is significantly higher than those of the constituents of GaSe (0.58) and SnS2 (1.04). The present work highlights the potential thermoelectric applications and the understanding of the thermoelectric transport mechanism for the recently synthesized p-n vdWH of GaSe/SnS2 with a high thermoelectric figure of merit and strong anisotropy.
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Affiliation(s)
- Zhiyuan Xu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Qiong Xia
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Long Zhang
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Guoying Gao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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Artini C, Isotta E, Demontis V, Pennelli G, Castellero A, Ferrario A, Rossella F. Editorial: focus on waste-heat harvesting via thermoelectric conversion: materials, devices and systems for sustainable energy technologies. NANOTECHNOLOGY 2023; 35:100201. [PMID: 38081069 DOI: 10.1088/1361-6528/ad1439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 12/11/2023] [Indexed: 12/23/2023]
Abstract
The focus collection 'Waste-heat harvestingviathermoelectric conversion: Materials, devices and systems for sustainable energy technologies' collates several research articles and a Roadmap highlighting the most recent advances in the field of thermoelectricity from the viewpoint of both basic and applied research, with a special eye on the work of the Italian community.
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Affiliation(s)
- C Artini
- DCCI, Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, I-16146 Genova, Italy
- CNR-ICMATE, Via De Marini 6, I-16149 Genova, Italy
| | - E Isotta
- Department of Civil, Environmental and Mechanical Engineering, University of Trento, Italy
- Department of Materials Science and Engineering, Northwestern University, United States of America
| | - V Demontis
- Department of Physics, University of Cagliari, I-09042 Monserrato, Italy
| | - G Pennelli
- Department of Information Engineering, University of Pisa, Via Caruso 16, I-56122 Pisa, Italy
| | - A Castellero
- Department of Chemistry, NIS, INSTM, University of Turin, Italy
- CNR-ICMATE, Corso Stati Uniti 4, I-35127 Padova, Italy
| | - A Ferrario
- CNR-ICMATE, Corso Stati Uniti 4, I-35127 Padova, Italy
| | - F Rossella
- Department of Informatics, Physical and Mathematical Sciences, University of Modena and Reggio Emilia, Via G. Campi 213/A, I-41125, Modena, Italy
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