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Sun Y, Liu M, Li B. A Temperature Sensory Leaky Integrate-and-Fire Artificial Neuron Based on Chitosan/PNIPAM Bilayer Volatile Complementary Resistive Switching Memristor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404177. [PMID: 39106238 DOI: 10.1002/smll.202404177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2024] [Revised: 07/02/2024] [Indexed: 08/09/2024]
Abstract
The presence of neurons is crucial in neuromorphic computing systems as they play a vital role in modulating the strength of synapses through the release of either excitatory or inhibitory stimuli. Hence, the development of sensory neurons plays a pivotal role in broadening the scope of brain-inspired neural computing. The present study introduces an artificial sensory neuron, which is constructed using a temperature-sensitive volatile complementary resistance switch memristor based on the functional layer of the chitosan/PNIPAM bilayer. The resistive switching behavior arises from the formation and ionization of oxygen vacancy filaments, whereby the threshold voltage and low resistive resistance of the device exhibit a temperature-dependent increase within the range of 290-410 K. A functional replication of a neuron with leaky integration and firing has been successfully developed, effectively simulating essential biological functions such as firing triggered by threshold, refractory period implementation, and modulation of spiking frequency. The artificial sensory neuron exhibits characteristics similar to those of leaky integrated firing neurons that receive temperature inputs. It has the potential to control the output frequency and amplitude under varying temperature conditions, making it suitable for temperature-sensing applications. This study presents a potential hardware implementation for developing efficient artificial intelligence systems that can support temperature detections.
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Affiliation(s)
- Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin, 150080, China
| | - Ming Liu
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin, 150080, China
| | - Bingxun Li
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin, 150080, China
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Yang F, Zhang Y, Feng X, Guo J, Cheng G, Du Z. Light and voltage dual-modulated volatile resistive switching in single ZnO nanowires. NANOTECHNOLOGY 2024; 35:185201. [PMID: 38271735 DOI: 10.1088/1361-6528/ad22b1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Accepted: 01/24/2024] [Indexed: 01/27/2024]
Abstract
A single ZnO nanowire device with volatile resistive switching behavior has been prepared. Different from traditional resistive switching devices, such ZnO nanowire devices do not exhibit resistive switching behaviors under a single bias voltage, and appear resistive switching behavior under the combined action of light stimuli and bias voltage. Through the demonstration of the time-dependent hysteresis curve and atmosphere-dependent hysteresis loop of the resistive switching devices, it is believed that under the resistive switching process, ultraviolet illumination can increase the carrier concentration and modulate the barrier depletion structure, and external bias voltage can ionize the surface state. They work together to modulate the switching process of the devices. Such light stimuli and bias voltage dual-modulated resistive switching device enables optical control and may thus be considered for sensory applications or optically tunable memories.
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Affiliation(s)
- Feng Yang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Yongle Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Xue Feng
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Junmeng Guo
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Gang Cheng
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
| | - Zuliang Du
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng 475004, People's Republic of China
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