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Alotaibi T, Alshahrani M, Alshammari M, Alotaibi M, Taha TAM, Al-Jobory AA, Ismael A. Orientational Effects and Molecular-Scale Thermoelectricity Control. ACS OMEGA 2024; 9:29537-29543. [PMID: 39005829 PMCID: PMC11238236 DOI: 10.1021/acsomega.4c02141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 06/10/2024] [Accepted: 06/12/2024] [Indexed: 07/16/2024]
Abstract
The orientational effect concept in a molecular-scale junction is established for asymmetric junctions, which requires the fulfillment of two conditions: (1) design of an asymmetric molecule with strong distinct terminal end groups and (2) construction of a doubly asymmetric junction by placing an asymmetric molecule in an asymmetric junction to form a multicomponent system such as Au/Zn-TPP+M/Au. Here, we demonstrate that molecular-scale junctions that satisfy the conditions of these effects can manifest Seebeck coefficients whose sign fluctuates depending on the orientation of the molecule within the asymmetric junction in a complete theoretical investigation. Three anthracene-based compounds are investigated in three different scenarios, one of which displays a bithermoelectric behavior due to the presence of strong anchor groups, including pyridyl and thioacetate. This bithermoelectricity demonstration implies that if molecules with alternating orientations can be placed between an asymmetric source and drain, they can be potentially utilized for increasing the thermovoltage in molecular-scale thermoelectric energy generators (TEGs).
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Affiliation(s)
- Turki Alotaibi
- Department
of Physics, College of Science, Jouf University, Sakaka 72388, Saudi Arabia
| | - Maryam Alshahrani
- Department
of Physics, College of Science, University
of Bisha, P.O. Box 551, Bisha 61922, Saudi Arabia
| | - Majed Alshammari
- Department
of Physics, College of Science, Jouf University, Sakaka 72388, Saudi Arabia
| | - Moteb Alotaibi
- Department
of Physics, College of Science and Humanities in Al-Kharj, Prince Sattam bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia
| | - Taha Abdel Mohaymen Taha
- Physics
and Engineering Mathematics Department, Faculty of Electronic Engineering, Menoufia University, Menouf 32952, Egypt
| | - Alaa A. Al-Jobory
- Department
of Physics, College of Science, University
of Anbar, Anbar 31001, Iraq
| | - Ali Ismael
- Department
of Physics, Lancaster University, Lancaster LA1 4YB, U.K.
- Department
of Physics, College of Education for Pure Science, Tikrit University, Tikrit 3400, Iraq
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Monika S, Suganya G, Gokulsaswath V, Kalpana G. Enhanced figure of merit in two-dimensional ZrNiSn nanosheets for thermoelectric applications. NANOTECHNOLOGY 2024; 35:395701. [PMID: 38861969 DOI: 10.1088/1361-6528/ad5692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Accepted: 06/11/2024] [Indexed: 06/13/2024]
Abstract
A novel two-dimensional (2D) half-HeuslerZrNiSn nanosheetfor thermoelectric applications was designed from bulk half-Heusler ZrNiSn through first-principles calculation. Investigation of bulk half-Heusler and 2D nanosheet ZrNiSn was performed with the Quantum Espresso code based on a density functional theory plane wave basis set. Electronic band structure and density of states calculations were used to study the confinement effects. On moving from bulk to 2D a change of structure is observed from face-centered cubic to trigonal due to confinement effects. The semiconducting nature of bulk ZrNiSn is undisturbed while moving to a 2D nanosheet; however, the band gap is widened from 0.46 to 1.3 eV due to the restricted motion of electrons in one direction. Compared with bulk ZrNiSn, 2D nanosheets were found to have a higher Seebeck coefficient a lower thermal conductivity and higher figure of merit, which makes 2D ZrNiSn nanosheets suitable for thermoelectric applications. Atomically thin 2D structures with a flat surface have the potential to form van der Waals heterojunctions, paving the way for device fabrication at the nanoscale level.
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Affiliation(s)
- S Monika
- Department of Physics, Anna University, Chennai 600025, India
| | - G Suganya
- Department of Physics, Anna University, Chennai 600025, India
| | - V Gokulsaswath
- Department of Physics, Anna University, Chennai 600025, India
| | - G Kalpana
- Department of Physics, Anna University, Chennai 600025, India
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Trifiletti V, Massetti M, Calloni A, Luong S, Pianetti A, Milita S, Schroeder BC, Bussetti G, Binetti S, Fabiano S, Fenwick O. Bismuth-Based Perovskite Derivates with Thermal Voltage Exceeding 40 mV/K. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:5408-5417. [PMID: 38595774 PMCID: PMC11000217 DOI: 10.1021/acs.jpcc.3c06324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 03/01/2024] [Accepted: 03/04/2024] [Indexed: 04/11/2024]
Abstract
Heat is an inexhaustible source of energy, and it can be exploited by thermoelectronics to produce electrical power or electrical responses. The search for a low-cost thermoelectric material that could achieve high efficiencies and can also be straightforwardly scalable has turned significant attention to the halide perovskite family. Here, we report the thermal voltage response of bismuth-based perovskite derivates and suggest a path to increase the electrical conductivity by applying chalcogenide doping. The films were produced by drop-casting or spin coating, and sulfur was introduced in the precursor solution using bismuth triethylxanthate. The physical-chemical analysis confirms the substitution. The sulfur introduction caused resistivity reduction by 2 orders of magnitude, and the thermal voltage exceeded 40 mV K-1 near 300 K in doped and undoped bismuth-based perovskite derivates. X-ray diffraction, Raman spectroscopy, and grazing-incidence wide-angle X-ray scattering were employed to confirm the structure. X-ray photoelectron spectroscopy, elemental analysis, scanning electron microscopy, and energy-dispersive X-ray spectroscopy were employed to study the composition and morphology of the produced thin films. UV-visible absorbance, photoluminescence, inverse photoemission, and ultraviolet photoelectron spectroscopies have been used to investigate the energy band gap.
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Affiliation(s)
- Vanira Trifiletti
- Department
of Materials Science and L-NESS, University
of Milano-Bicocca, Via
Cozzi 55, I-20125 Milan, Italy
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Matteo Massetti
- Laboratory
of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping SE-601
74, Sweden
| | - Alberto Calloni
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano, Italy
| | - Sally Luong
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Andrea Pianetti
- Department
of Materials Science and L-NESS, University
of Milano-Bicocca, Via
Cozzi 55, I-20125 Milan, Italy
| | - Silvia Milita
- Institute
for Microelectronics and Microsystems (CNRIMM), Via Piero Gobetti 101, 40129 Bologna, Italy
| | - Bob C. Schroeder
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
| | - Gianlorenzo Bussetti
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano, Italy
| | - Simona Binetti
- Department
of Materials Science and L-NESS, University
of Milano-Bicocca, Via
Cozzi 55, I-20125 Milan, Italy
| | - Simone Fabiano
- Laboratory
of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping SE-601
74, Sweden
| | - Oliver Fenwick
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, United Kingdom
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Artini C, Isotta E, Demontis V, Pennelli G, Castellero A, Ferrario A, Rossella F. Editorial: focus on waste-heat harvesting via thermoelectric conversion: materials, devices and systems for sustainable energy technologies. NANOTECHNOLOGY 2023; 35:100201. [PMID: 38081069 DOI: 10.1088/1361-6528/ad1439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 12/11/2023] [Indexed: 12/23/2023]
Abstract
The focus collection 'Waste-heat harvestingviathermoelectric conversion: Materials, devices and systems for sustainable energy technologies' collates several research articles and a Roadmap highlighting the most recent advances in the field of thermoelectricity from the viewpoint of both basic and applied research, with a special eye on the work of the Italian community.
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Affiliation(s)
- C Artini
- DCCI, Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, I-16146 Genova, Italy
- CNR-ICMATE, Via De Marini 6, I-16149 Genova, Italy
| | - E Isotta
- Department of Civil, Environmental and Mechanical Engineering, University of Trento, Italy
- Department of Materials Science and Engineering, Northwestern University, United States of America
| | - V Demontis
- Department of Physics, University of Cagliari, I-09042 Monserrato, Italy
| | - G Pennelli
- Department of Information Engineering, University of Pisa, Via Caruso 16, I-56122 Pisa, Italy
| | - A Castellero
- Department of Chemistry, NIS, INSTM, University of Turin, Italy
- CNR-ICMATE, Corso Stati Uniti 4, I-35127 Padova, Italy
| | - A Ferrario
- CNR-ICMATE, Corso Stati Uniti 4, I-35127 Padova, Italy
| | - F Rossella
- Department of Informatics, Physical and Mathematical Sciences, University of Modena and Reggio Emilia, Via G. Campi 213/A, I-41125, Modena, Italy
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