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Kim H, Seong Y, Kwon K, Hwang TY, Shin H. Acoustic Resonance Tuning by High-Order Lorentzian Mixing. NANO LETTERS 2024; 24:7143-7149. [PMID: 38740527 PMCID: PMC11194801 DOI: 10.1021/acs.nanolett.4c00335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 04/19/2024] [Accepted: 04/24/2024] [Indexed: 05/16/2024]
Abstract
Nanoscale mechanical resonators have attracted a great deal of attention for signal processing, sensors, and quantum applications. Recent progress in ultrahigh-Q acoustic cavities in nanostructures allows strong interactions with various physical systems and advanced functional devices. Those acoustic cavities are highly sensitive to external perturbations, and it is hard to control those resonance properties since those responses are determined by the geometry and material. In this paper, we demonstrate a novel acoustic resonance tuning method by mixing high-order Lorentzian responses in an optomechanical system. Using weakly coupled phononic-crystal acoustic cavities, we achieve coherent mixing of second- and third-order Lorentzian responses, which is capable of the fine-tunability of the bandwidth and peak frequency of the resonance with a tuning range comparable to the acoustic dissipation rate of the device. This novel resonance tuning method can be widely applied to Lorentzian-response systems and optomechanics, especially active compensation for environmental fluctuation and fabrication errors.
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Affiliation(s)
- Hyeongpin Kim
- Department
of Physics, Pohang University of Science
and Technology (POSTECH), Pohang 37673, Republic
of Korea
| | - Yeolheon Seong
- Department
of Physics, Pohang University of Science
and Technology (POSTECH), Pohang 37673, Republic
of Korea
| | - Kiwon Kwon
- Department
of Physics, Pohang University of Science
and Technology (POSTECH), Pohang 37673, Republic
of Korea
| | - Taek Yong Hwang
- Molding
and Metal Forming R&D Department, Korea
Institute of Industrial Technology, Bucheon 14441, Republic of Korea
| | - Heedeuk Shin
- Department
of Physics, Pohang University of Science
and Technology (POSTECH), Pohang 37673, Republic
of Korea
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Springolo M, Royo M, Stengel M. In-Plane Flexoelectricity in Two-Dimensional D_{3d} Crystals. PHYSICAL REVIEW LETTERS 2023; 131:236203. [PMID: 38134767 DOI: 10.1103/physrevlett.131.236203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 07/31/2023] [Accepted: 10/25/2023] [Indexed: 12/24/2023]
Abstract
We predict a large in-plane polarization response to bending in a broad class of trigonal two-dimensional crystals. We define and compute the relevant flexoelectric coefficients from first principles as linear-response properties of the undistorted layer by using the primitive crystal cell. The ensuing response (evaluated for SnS_{2}, silicene, phosphorene, and RhI_{3} monolayers and for a hexagonal BN bilayer) is up to 1 order of magnitude larger than the out-of-plane components in the same material. We illustrate the topological implications of our findings by calculating the polarization textures that are associated with a variety of rippled and bent structures. We also determine the longitudinal electric fields induced by a flexural phonon at leading order in amplitude and momentum.
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Affiliation(s)
- Matteo Springolo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Miquel Royo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Massimiliano Stengel
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
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Kong D, Tian F, Xu Y, Zhu S, Yu Z, Xiong L, Li P, Wei H, Zheng X, Peng M. Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures. Phys Chem Chem Phys 2023; 25:30361-30372. [PMID: 37909285 DOI: 10.1039/d3cp02137h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe and 3D wurtzite GaN polar semiconductors to construct MoSSe/GaN polar heterostructures by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV in the N polarity to -0.24 eV/-0.42 eV in the Ga polarity. In particular, the polarity reversal of GaN in contact with Janus MoSSe not only determined the charge transfer direction but also significantly increased the electrostatic potential difference from 0.71 eV/0.78 eV in the N polarity to 3.13 eV/2.24 eV in the Ga polarity. In addition, strain modulation was further utilized to enhance interfacial polarization and tune the electronic energy band profiles of Janus MoSSe/GaN polar heterostructures. By applying in-plane biaxial strains, the AA and AA' polarity configurations induced band alignment transition from type I (tensile) to type II (compressive). As a result, both the polarity reversal and strain modulation provide effective ways for the multifunctional manipulation and facile design of Janus MoSSe/III-nitrides polar heterostructures, which broaden the Janus 2D/3D polar semiconducting devices in advanced electronics, optoelectronics, and energy harvesting applications.
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Affiliation(s)
- Delin Kong
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Feng Tian
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Yingying Xu
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Shaoqun Zhu
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Zetong Yu
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Lefeng Xiong
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Peipei Li
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Huiyun Wei
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Xinhe Zheng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
| | - Mingzeng Peng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
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