Dark screening solitons in multiple quantum well planar waveguide

Oscillations of charge carrier domains in photorefractive bipolar semiconductors

The article presents analysis of the formation of charge carrier domains generated by a localized optical beam and the phenomenon of their oscillations. The research was carried out for bipolar photorefractive semiconductors characterized by nonlinear transport of electrons. The analysis allowed us to determine a set of basic quantitative parameters that have an impact on the appearance of carrier oscillations and their character.

Numerical method for an analysis of nonlinear light propagation in photorefractive media--time nonlocal approach

Nonlinear light propagation in photorefractive media can be analyzed by numerical methods. The presented numerical approach has regard to the effects of time nonlocality. Two algorithms are presented, and compared in terms of physical results and computing times. The possibility to address the issue of time nonlocality in two ways is attributed to the fact that, it is possible to completely separate carrier dynamics evaluation and wave equation calculation. This in turn, allows to choose a short integration time for carrier dynamics and a longer one to solve the wave equation. The tests of the methods were carried out for a one-carrier model that describes most of photorefractive media, and for a model with bipolar transport and hot electron effect, used in descriptions of semiconductor materials.