Recent progress in GeSi electro-absorption modulators

Design of a broadband Ge1-xSix electro-absorption modulator based on the Franz-Keldysh effect with thermal tuning

We present the design of an adiabatic taper coupled Ge_1-xSi_x electro-absorption modulator, which is based on Franz-Keldysh effect. The device has an active region of 0.8×50 µm², an extinction ratio of more than 6 dB and an insertion loss less than 3 dB at the wavelength of 1550 nm. The operating bandwidth can be broadened to more than 90 nm by an AlN block assisted heater with only 6.2 mW energy consumption. Moreover, the operating wavelength shift caused by material composition deviation can be compensated to the expected wavelength by thermal tuning. This design may play an important role in next-generation, high-density optical integrations for datacom and high-performance computing.

Dynamic beam steering with all-dielectric electro-optic III-V multiple-quantum-well metasurfaces

Tunable metasurfaces enable dynamical control of the key constitutive properties of light at a subwavelength scale. To date, electrically tunable metasurfaces at near-infrared wavelengths have been realized using free carrier modulation, and switching of thermo-optical, liquid crystal and phase change media. However, the highest performance and lowest loss discrete optoelectronic modulators exploit the electro-optic effect in multiple-quantum-well heterostructures. Here, we report an all-dielectric active metasurface based on electro-optically tunable III–V multiple-quantum-wells patterned into subwavelength elements that each supports a hybrid Mie-guided mode resonance. The quantum-confined Stark effect actively modulates this volumetric hybrid resonance, and we observe a relative reflectance modulation of 270% and a phase shift from 0° to ~70°. Additionally, we demonstrate beam steering by applying an electrical bias to each element to actively change the metasurface period, an approach that can also realize tunable metalenses, active polarizers, and flat spatial light modulators.

Here, the authors demonstrate an electrically tunable metasurface with III–V semiconducting MQW structures as resonant metasurface elements. The amplitude and phase of the light reflected from the metasurface can be continuously tuned by applying DC electric field across the MQW metasurface elements.

Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing

The development of Ge and SiGe chemical vapor deposition techniques on silicon wafers has enabled the integration of multi-quantum well structures in silicon photonics chips for nonlinear optics with potential applications to integrated nonlinear optics, however research has focused up to now on undoped quantum wells and interband optical excitations. In this work, we present model calculations for the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe multi-quantum wells. We employ a valence band-structure model for Si_1-xGe_x to calculate the confined hole states of asymmetric-coupled quantum wells for second-harmonic generation in the mid-infrared. We calculate the nonlinear emission spectra from the second-order susceptibility tensor, including the particular vertical emission spectra of valence-band quantum wells. Two possible nonlinear mid-infrared sensor architectures, one based on waveguides and another based on metasurfaces, are described as perspective application.

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN_x) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN_x is precisely measured in the temperature range 24-76 °C using the SiN_x rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN_x ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si₃N₄, while the value for the PVD-SiN_x ring is slightly higher. Both SiN_x rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN_x needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiN_x is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN_x rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al₂O₃, Ga₂O₃ Ta₂O₅, HfO₂ and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication.

Graphene based low insertion loss electro-absorption modulator on SOI waveguide

Graphene is considered a promising material for broadband opto-electronics because of its linear and gapless band structure. Its optical conductivity can be significantly tuned electrostatically by shifting the Fermi level. Using mentioned property, we experimentally demonstrate a graphene based electro-absorption modulator with very low insertion loss. The device is realized on a silicon on insulator (SOI) waveguide operating at 1550 nm wavelength. The modulator shows a modulation depth of 16 dB and an insertion loss of 3.3 dB, surpassing GeSi and previous graphene based absorption modulators and being comparable to silicon Mach-Zehnder interferometer based modulators.