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Li ZW, Guo DP, Huang GY, Tao WL, Duan MY. Electronic structures and optical properties of Ga doped single-layer indium nitride. CHINESE J CHEM PHYS 2018. [DOI: 10.1063/1674-0068/31/cjcp1711216] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Zhi-wei Li
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
| | - De-ping Guo
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
| | - Guang-yi Huang
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
| | - Wang-li Tao
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
| | - Man-yi Duan
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
- Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
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