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Chatterjee A, Kruskopf M, Wundrack S, Hinze P, Pierz K, Stosch R, Scherer H. Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:5317-5325. [PMID: 36439398 PMCID: PMC9686134 DOI: 10.1021/acsaelm.2c00989] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 10/16/2022] [Indexed: 06/16/2023]
Abstract
The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of the underlying SiC wafer are critical parameters for optimizing the quality of monolayer graphene on SiC. In this systematic study, we show how the surface properties and the pretreatment determine the quality of monolayer graphene using polymer-assisted sublimation growth (PASG) on SiC. Using the spin-on deposition technique of PASG, several polymer concentrations have been investigated to understand the influence of the polymer content on the final monolayer coverage using wafers of different miscut angles and different polytypes. Confocal laser scanning microscopy (CLSM), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) were used to characterize these films. The results show that, even for SiC substrates with high miscut angles, high-quality graphene is obtained when an appropriate polymer concentration is applied. This is in excellent agreement with the model understanding that an insufficient carbon supply from SiC step edge decomposition can be compensated by additionally providing carbon from a polymer source. The described methods make the PASG spin-on deposition technique more convenient for commercial use.
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Affiliation(s)
- Atasi Chatterjee
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Stefan Wundrack
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Peter Hinze
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Klaus Pierz
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Rainer Stosch
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Hansjoerg Scherer
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
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2
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Accurate graphene quantum Hall arrays for the new International System of Units. Nat Commun 2022; 13:6933. [PMID: 36376308 PMCID: PMC9663594 DOI: 10.1038/s41467-022-34680-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Accepted: 11/02/2022] [Indexed: 11/16/2022] Open
Abstract
Graphene quantum Hall effect (QHE) resistance standards have the potential to provide superior realizations of three key units in the new International System of Units (SI): the ohm, the ampere, and the kilogram (Kibble Balance). However, these prospects require different resistance values than practically achievable in single graphene devices (~12.9 kΩ), and they need bias currents two orders of magnitude higher than typical breakdown currents IC ~ 100 μA. Here we present experiments on quantization accuracy of a 236-element quantum Hall array (QHA), demonstrating RK/236 ≈ 109 Ω with 0.2 part-per-billion (nΩ/Ω) accuracy with IC ≥ 5 mA (~1 nΩ/Ω accuracy for IC = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene). The array accuracy, comparable to the most precise universality tests of QHE, together with the scalability and reliability of this approach, pave the road for wider use of graphene in the new SI and beyond. The 2019 redefinition of the International System of Units requires a 100 Ω quantum resistance standard for the ideal electrical realization of the kilogram via the Kibble Balance. Here, the authors report the realization of an array of 236 graphene quantum Hall bars, demonstrating a quantized resistance of 109 Ω with an accuracy of 0.2 nΩ/Ω over an extended range of bias currents.
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Rathore S, Patel DK, Thakur MK, Haider G, Kalbac M, Kruskopf M, Liu CI, Rigosi AF, Elmquist RE, Liang CT, Hong PD. Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC. CARBON 2021; 184:10.1016/j.carbon.2021.07.098. [PMID: 37200678 PMCID: PMC10190169 DOI: 10.1016/j.carbon.2021.07.098] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H-SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H-SiC-based device that enables us to observe the positive photoresponse for (405-532) nm and negative photoresponse for (632-980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.
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Affiliation(s)
- Shivi Rathore
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan
| | - Dinesh Kumar Patel
- Department of Physics, National Taiwan University, Taipei, 106319, Taiwan
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
| | - Mukesh Kumar Thakur
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic
| | - Golam Haider
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic
- Corresponding author. (G. Haider)
| | - Martin Kalbac
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116, Braunschweig, Germany
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, MD, 20742, USA
| | - Albert F. Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
| | - Randolph E. Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei, 106319, Taiwan
- Corresponding author. (C.-T. Liang)
| | - Po-Da Hong
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan
- Corresponding author. (P.-D. Hong)
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Marie LRS, Liu CI, Hu IF, Hill HM, Saha D, Elmquist RE, Lian CT, Newell DB, Barbara P, Hagmann JA, Rigosi AF. Abrikosov vortex corrections to effective magnetic field enhancement in epitaxial graphene. PHYSICAL REVIEW. B 2021; 104:10.1103/physrevb.104.085435. [PMID: 38883413 PMCID: PMC11177804 DOI: 10.1103/physrevb.104.085435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
Here, we report the effects of enhanced magnetic fields resulting from type-II superconducting NbTiN slabs adjacent to narrow Hall bar devices fabricated from epitaxial graphene. Observed changes in the magnetoresistances were found to have minimal contributions from device inhomogeneities, magnet hysteresis, electron density variations along the devices, and transient phenomena. We hypothesize that Abrikosov vortices, present in type-II superconductors, contribute to these observations. By determining the London penetration depth, coupled with elements of Ginzburg-Landau theory, one can approximate an upper bound on the effect that vortex densities at low fields (< 1T) have on the reported observations. These analyses offer insights into device fabrication and how to utilize the Meissner effect for any low-field and low-temperature applications using superconductors.
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Affiliation(s)
- Luke R. St. Marie
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, Georgetown University, Washington, DC 20057, USA
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
| | - I-Fan Hu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Heather M. Hill
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Dipanjan Saha
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Randolph E. Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Chi-Te Lian
- Department of Physics, Georgetown University, Washington, DC 20057, USA
| | - David B. Newell
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Paola Barbara
- Department of Physics, Georgetown University, Washington, DC 20057, USA
| | - Joseph A. Hagmann
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Albert F. Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
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5
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Panna AR, Hu IF, Kruskopf M, Patel DK, Jarrett DG, Liu CI, Payagala SU, Saha D, Rigosi AF, Newell DB, Liang CT, Elmquist RE. Graphene quantum Hall effect parallel resistance arrays. PHYSICAL REVIEW. B 2021; 103:10.1103/physrevb.103.075408. [PMID: 34263094 PMCID: PMC8276113 DOI: 10.1103/physrevb.103.075408] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near 1000 Ω. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust ν = 2 filling factor in array devices at relative precision better than 10-8. Broad tunability of the carrier density also enables investigation of the ν = 6 plateau. Optimized networks of QHR devices described in this work suppress Ohmic contact resistance error using branched contacts and avoid crossover leakage with interconnections that are superconducting for quantizing magnetic fields up to 13.5 T. Our work enables more direct scaling of resistance for quantized values in arrays of arbitrary network geometry.
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Affiliation(s)
- Alireza R Panna
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
| | - I-Fan Hu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan, Republic of China
| | - Mattias Kruskopf
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Dinesh K Patel
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan, Republic of China
| | - Dean G Jarrett
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
| | - Shamith U Payagala
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
| | - Dipanjan Saha
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
| | - Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
| | - David B Newell
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan, Republic of China
| | - Randolph E Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
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6
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Hu IF, Panna AR, Rigosi AF, Kruskopf M, Patel DK, Liu CI, Saha D, Payagala SU, Newell DB, Jarrett DG, Liang CT, Elmquist RE. Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices. PHYSICAL REVIEW. B 2021; 104:10.1103/physrevb.104.085418. [PMID: 36875776 PMCID: PMC9982844 DOI: 10.1103/physrevb.104.085418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We report on nonreciprocity observations in several configurations of graphene-based quantum Hall devices. Two distinct measurement configurations were adopted to verify the universality of the observations (i.e., two-terminal arrays and four-terminal devices). Our findings determine the extent to which epitaxial graphene anisotropies contribute to the observed asymmetric Hall responses. The presence of backscattering induces a device-dependent asymmetry rendering the Onsager-Casimir relations limited in their capacity to describe the behavior of such devices, except in the low-field classical regime and the fully quantized Hall state. The improved understanding of this quantum electrical process broadly limits the applicability of the reciprocity principle in the presence of quantum phase transitions and for anisotropic two-dimensional materials.
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Affiliation(s)
- I-Fan Hu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Alireza R. Panna
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Albert F. Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Dinesh K. Patel
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
| | - Dipanjan Saha
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Shamith U. Payagala
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - David B. Newell
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Dean G. Jarrett
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Randolph E. Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
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Payagala SU, Rigosi AF, Panna AR, Pollarolo A, Kruskopf M, Schlamminger S, Jarrett DG, Brown R, Elmquist RE, Brown D, Newell DB. Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 2020; 69:9374-9380. [PMID: 33335334 PMCID: PMC7739376 DOI: 10.1109/tim.2020.3004678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology (NIST) was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada (NRC) by comparing them to a 1 kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO)3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single probe wired for two types of quantum standards - GaAs, the established material, and graphene, the newer material that may promote the development of more user-friendly equipment.
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Affiliation(s)
- Shamith U Payagala
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Alireza R Panna
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Alessio Pollarolo
- Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, Braunschweig 38116, Germany
| | | | - Dean G Jarrett
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Ryan Brown
- Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada
| | | | - Duane Brown
- Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada
| | - David B Newell
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
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Marzano M, Kruskopf M, Panna AR, Rigosi AF, Patel DK, Jin H, Cular S, Callegaro L, Elmquist RE, Ortolano M. Implementation of a graphene quantum Hall Kelvin bridge-on-a-chip for resistance calibrations. METROLOGIA 2020; 57:10.1088/1681-7575/ab581e. [PMID: 32127725 PMCID: PMC7053649 DOI: 10.1088/1681-7575/ab581e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The unique properties of the quantum Hall effect allow one to revisit traditional measurement circuits with a new flavour. In this paper we present the first realization of a quantum Hall Kelvin bridge for the calibration of standard resistors directly against the quantum Hall resistance. The bridge design is particularly simple and requires a minimal number of instruments. The implementation here proposed is based on the bridge-on-a-chip, an integrated circuit composed of three graphene quantum Hall elements and superconducting wiring. The accuracy achieved in the calibration of a 12 906Ω standard resistor is of a few parts in 108, at present mainly limited by the prototype device and the interferences in the current implementation, with the potential to achieve few parts in 109, which is the level of the systematic uncertainty of the quantum Hall Kelvin bridge itself.
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Affiliation(s)
- Martina Marzano
- Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
- INRIM - Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce, 91, 10135 Torino, Italy
| | - Mattias Kruskopf
- University of Maryland, College Park, MD 20742, USA
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Alireza R Panna
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Albert F Rigosi
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | | | - Hanbyul Jin
- University of Maryland, College Park, MD 20742, USA
| | - Stefan Cular
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Luca Callegaro
- INRIM - Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce, 91, 10135 Torino, Italy
| | - Randolph E Elmquist
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Massimo Ortolano
- Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
- INRIM - Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce, 91, 10135 Torino, Italy
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Liu CI, Scaletta DS, Patel DK, Kruskopf M, Levy A, Hill HM, Rigosi AF. Analysing quantized resistance behaviour in graphene Corbino p-n junction devices. JOURNAL OF PHYSICS D: APPLIED PHYSICS 2020; 53:10.1088/1361-6463/ab83bb. [PMID: 32831402 PMCID: PMC7431976 DOI: 10.1088/1361-6463/ab83bb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the ν = 2 plateau (R H ≈ 12906 Ω) and agree with numerical simulations performed with the LTspice circuit simulator. The formulae describing experimental and simulated data are empirically derived for generalized placement of up to three current terminals and accurately reflects observed partial edge channel cancellation. These results support the use of ultraviolet lithography as a way to scale up graphene-based devices with suitably narrow junctions that could be applied in a variety of subfields.
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Affiliation(s)
- Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
- Department of Chemistry and Biochemistry, University of Maryland, College Park, MD 20742, United States
| | - Dominick S Scaletta
- Department of Physics, Mount San Jacinto College, Menifee, CA 92584, United States
| | - Dinesh K Patel
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Mattias Kruskopf
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
- Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
- Electricity Division, Physikalisch-Technische Bundesanstalt, Braunschweig 38116, Germany
| | - Antonio Levy
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Heather M Hill
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
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10
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Panna AR, Kruskopf M, Rigosi AF, Marzano M, Patel DK, Payagala SU, Jarrett DG, Newell DB, Elmquist RE. Superconducting Contact Geometries for Next-Generation Quantized Hall Resistance Standards. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 2020; 1.633481E6:10.1109/CPEM49742.2020.9191753. [PMID: 33335333 PMCID: PMC7739517 DOI: 10.1109/cpem49742.2020.9191753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.
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Affiliation(s)
- Alireza R Panna
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Mattias Kruskopf
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
- Physikalisch-Technische Bundesanstalt, Department of Electrical Quantum Metrology, Braunschweig, 38116, Germany
| | - Albert F Rigosi
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Martina Marzano
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
- Istituto Nazionale Di Ricerca Metrologica, Torino 10135, Italy
| | - Dinesh K Patel
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Shamith U Payagala
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Dean G Jarrett
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - David B Newell
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Randolph E Elmquist
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
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