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Bian R, He R, Pan E, Li Z, Cao G, Meng P, Chen J, Liu Q, Zhong Z, Li W, Liu F. Developing fatigue-resistant ferroelectrics using interlayer sliding switching. Science 2024; 385:57-62. [PMID: 38843352 DOI: 10.1126/science.ado1744] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/24/2024] [Indexed: 07/06/2024]
Abstract
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
- Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jiangang Chen
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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2
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Sharma KP, Shin M, Awasthi GP, Cho S, Yu C. One-step hydrothermal synthesis of CuS/MoS 2 composite for use as an electrochemical non-enzymatic glucose sensor. Heliyon 2024; 10:e23721. [PMID: 38312675 PMCID: PMC10835264 DOI: 10.1016/j.heliyon.2023.e23721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 12/10/2023] [Accepted: 12/12/2023] [Indexed: 02/06/2024] Open
Abstract
Early diagnosis may be crucial for the prevention of chronic diabetes mellitus. For that herein, we prepared a CuS/MoS2 composite for a non-enzymatic glucose sensor through a one-step hydrothermal method owing to the synergetic effect of CuS/MoS2. The surface morphology of CuS/MoS2 was studied by Field Emission Scanning Electron Microscopy (FESEM) and Cs-corrected Scanning Transmission Electron Microscopy (Cs-STEM). The crystallinity and surface composition of CuS/MoS2 were analyzed by X-ray Diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS) respectively. The working electrode was prepared from CuS/MoS2 electrocatalyst, and for that dispersed solution of electrocatalyst was used to fabricate the material-loaded glassy carbon electrode (GC). CuS/MoS2 composite shows the viability of electrocatalyst to oxidize glucose in an alkaline solution with sensitivity and detection limit of 252.71 μA mM-1 cm-2 and 1.52 μM respectively. The proposed glucose sensor showed reasonable stability and potential selectivity during electrochemical analysis. Accordingly, the CuS/MoS2 composite has potential as a viable material for glucose sensing in diluted human serum.
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Affiliation(s)
- Krishna Prasad Sharma
- Department of Energy Storage/Conversion Engineering (BK21 FOUR), Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, Republic of Korea
| | - Miyeon Shin
- Department of Energy Storage/Conversion Engineering (BK21 FOUR), Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, Republic of Korea
| | - Ganesh Prasad Awasthi
- Division of Convergence Technology Engineering, Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, Republic of Korea
| | - Soonhwan Cho
- ENPLUS Co., LTD, 167 Jayumuyeok-gil, Baeksan-myeon, Gimje-si, 54352, Republic of Korea
| | - Changho Yu
- Department of Energy Storage/Conversion Engineering (BK21 FOUR), Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, Republic of Korea
- Division of Convergence Technology Engineering, Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, Republic of Korea
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3
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Wang H, Dong C, Gui Y, Ye J, Altaleb S, Thomaschewski M, Movahhed Nouri B, Patil C, Dalir H, Sorger VJ. Self-Powered Sb 2Te 3/MoS 2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1973. [PMID: 37446489 DOI: 10.3390/nano13131973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 06/19/2023] [Accepted: 06/25/2023] [Indexed: 07/15/2023]
Abstract
Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W-1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.
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Affiliation(s)
- Hao Wang
- Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USA
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Chaobo Dong
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Yaliang Gui
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Jiachi Ye
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Salem Altaleb
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Martin Thomaschewski
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Behrouz Movahhed Nouri
- Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USA
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Chandraman Patil
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
| | - Hamed Dalir
- Department of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USA
| | - Volker J Sorger
- Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USA
- Department of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA
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4
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Duque-Ossa LC, Volin Bolok-Russek M, Reyes-Retana JA. Glycine Active Sites Analysis from a Geometrical Perspective: A DFT Study. J Phys Chem B 2023. [PMID: 37267585 DOI: 10.1021/acs.jpcb.3c00666] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Density functional theory calculations of 2D materials and biological molecules have been used to evaluate disease progression through biosensing. In this case, a glycine molecule in normal and zwitterionic form was evaluated on its interaction with zigzag single-walled carbon nanotubes, graphene sheets, and molybdenum disulfide sheets. Glycine was rotated in order to interact with the materials at different active sites. Binding and cohesion energies, band gaps, and charge transfer for the systems were obtained. Binding and cohesion for the interaction between normal glycine and 2D materials result in better outcomes with the presence of a dangling bond using van der Waals correction, giving the more stable results for glycine and carbon nanotubes in the plane ZY and glycine with graphene in the plane YX, respectively. For zwitterion glycine, binding and cohesion energies are better without a dangling bond supported on graphene in the plane ZX. Charge transfer results for normal glycine show a better interaction for glycine and molybdenum disulfide in the plane ZY, while for zwitterion glycine, higher charge transfer is reported in graphene (ZX). Furthermore, the density of states of normal glycine exhibits an improvement in the band gap for carbon related materials (more semiconductor behavior) and a slight decrease in semiconductor behavior for molybdenum disulfide.
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Affiliation(s)
- L C Duque-Ossa
- Tecnologico de Monterrey, Department of Mechanics and Advanced Materials, Santa fe, Ciudad de Mexico 01389, Mexico
| | - Mark Volin Bolok-Russek
- Universidad Iberoamericana, Department of Physics and Mathematics, Lomas de Santa Fe, Ciudad de Mexico 01219, Mexico
| | - José Angel Reyes-Retana
- Tecnologico de Monterrey, Department of Mechanics and Advanced Materials, Santa fe, Ciudad de Mexico 01389, Mexico
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5
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Parida S, Dobley A, Carter CB, Dongare AM. Phase engineering of layered anode materials during ion-intercalation in Van der Waal heterostructures. Sci Rep 2023; 13:5408. [PMID: 37012258 PMCID: PMC10070316 DOI: 10.1038/s41598-023-31342-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 03/10/2023] [Indexed: 04/05/2023] Open
Abstract
Transition metal dichalcogenides (TMDs) are a class of 2D materials demonstrating promising properties, such as high capacities and cycling stabilities, making them strong candidates to replace graphitic anodes in lithium-ion batteries. However, certain TMDs, for instance, MoS2, undergo a phase transformation from 2H to 1T during intercalation that can affect the mobility of the intercalating ions, the anode voltage, and the reversible capacity. In contrast, select TMDs, for instance, NbS2 and VS2, resist this type of phase transformation during Li-ion intercalation. This manuscript uses density functional theory simulations to investigate the phase transformation of TMD heterostructures during Li-, Na-, and K-ion intercalation. The simulations suggest that while stacking MoS2 layers with NbS2 layers is unable to limit this 2H → 1T transformation in MoS2 during Li-ion intercalation, the interfaces effectively stabilize the 2H phase of MoS2 during Na- and K-ion intercalation. However, stacking MoS2 layers with VS2 is able to suppress the 2H → 1T transformation of MoS2 during the intercalation of Li, Na, and K-ions. The creation of TMD heterostructures by stacking MoS2 with layers of non-transforming TMDs also renders theoretical capacities and electrical conductivities that are higher than that of bulk MoS2.
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Affiliation(s)
- Shayani Parida
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, USA
| | | | - C Barry Carter
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, USA
- Center for Integrated Nanotechnologies (CINT), Sandia National Laboratories, Albuquerque, NM, USA
| | - Avinash M Dongare
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, USA.
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6
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Photodegradation of Ciprofloxacin and Levofloxacin by Au@ZnONPs-MoS2-rGO Nanocomposites. Catalysts 2023. [DOI: 10.3390/catal13030538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/12/2023] Open
Abstract
This study aimed to investigate the photocatalytic performance of diverse zinc oxide catalysts containing gold nanoparticles (AuNPs), molybdenum disulfide (MoS2), and reduced graphene oxide (rGO) toward the degradation of the antibiotics levofloxacin (LFX) and ciprofloxacin (CFX) in aqueous solutions. The obtained results demonstrate that LFX is more resistant to degradation when compared with CFX and that the principal route of degradation under visible light is the formation of hydroxyl radicals. Photoluminescence (PL) measurements were employed to verify the inhibitory effect of electron–hole recombination when AuNPs, MoS2, and rGO are integrated into a semiconductor. The catalyst that achieved the highest percentage of CFX degradation was 1%Au@ZnONPs-3%MoS2-1%rGO, exhibiting a degradation efficiency of 96%, while the catalyst that exhibited the highest percentage of LFX degradation was 5%Au@ZnONPs-3%MoS2-1%rGO, displaying a degradation efficiency of 99.8%. A gas chromatography–mass spectrometry (GC-MS) analysis enabled the identification of reaction intermediates, facilitating the determination of a potential degradation pathway for both antibiotics. Additionally, recyclability assessments showed that the synthesized catalysts maintained stable photocatalytic efficiencies after 15 cycles, indicating that the heterostructures have the potential for further usage and may be tested with other organic contaminants as well.
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7
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Jones LH, Xing Z, Swallow JEN, Shiel H, Featherstone TJ, Smiles MJ, Fleck N, Thakur PK, Lee TL, Hardwick LJ, Scanlon DO, Regoutz A, Veal TD, Dhanak VR. Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS 2, MoSe 2, and MoTe 2). THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:21022-21033. [PMID: 36561200 PMCID: PMC9761681 DOI: 10.1021/acs.jpcc.2c05100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Revised: 11/12/2022] [Indexed: 06/17/2023]
Abstract
A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS2, MoSe2, and MoTe2 are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX2 series as 5.86, 5.40, and 5.00 eV for MoSe2, MoSe2, and MoTe2, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work.
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Affiliation(s)
- Leanne
A. H. Jones
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Zongda Xing
- Department
of Chemistry, University College London, 20 Gordon Street, LondonWC1H 0AJ, U.K.
| | - Jack E. N. Swallow
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Huw Shiel
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Thomas J. Featherstone
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Matthew J. Smiles
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Nicole Fleck
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Pardeep K. Thakur
- Diamond
Light Source Ltd., Diamond House, Harwell
Science and Innovation Campus, Didcot, OxfordshireOX11 0DE, U.K.
| | - Tien-Lin Lee
- Diamond
Light Source Ltd., Diamond House, Harwell
Science and Innovation Campus, Didcot, OxfordshireOX11 0DE, U.K.
| | - Laurence J. Hardwick
- Stephenson
Institute for Renewable Energy and Department of Chemistry, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - David O. Scanlon
- Department
of Chemistry, University College London, 20 Gordon Street, LondonWC1H 0AJ, U.K.
| | - Anna Regoutz
- Department
of Chemistry, University College London, 20 Gordon Street, LondonWC1H 0AJ, U.K.
| | - Tim D. Veal
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Vinod R. Dhanak
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
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8
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Meng P, Wu Y, Bian R, Pan E, Dong B, Zhao X, Chen J, Wu L, Sun Y, Fu Q, Liu Q, Shi D, Zhang Q, Zhang YW, Liu Z, Liu F. Sliding induced multiple polarization states in two-dimensional ferroelectrics. Nat Commun 2022; 13:7696. [PMID: 36509811 PMCID: PMC9744910 DOI: 10.1038/s41467-022-35339-6] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Accepted: 11/29/2022] [Indexed: 12/15/2022] Open
Abstract
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3 R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3 R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3 R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices.
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Affiliation(s)
- Peng Meng
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China ,grid.54549.390000 0004 0369 4060Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China
| | - Yaze Wu
- grid.185448.40000 0004 0637 0221Institute of High Performance Computing, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore
| | - Renji Bian
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Er Pan
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Biao Dong
- grid.41156.370000 0001 2314 964XSchool of Physics, Nanjing University, Nanjing, China
| | - Xiaoxu Zhao
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Peking University, Beijing, China
| | - Jiangang Chen
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Lishu Wu
- grid.59025.3b0000 0001 2224 0361School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yuqi Sun
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Qundong Fu
- grid.59025.3b0000 0001 2224 0361School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qing Liu
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Dong Shi
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Qi Zhang
- grid.41156.370000 0001 2314 964XSchool of Physics, Nanjing University, Nanjing, China
| | - Yong-Wei Zhang
- grid.185448.40000 0004 0637 0221Institute of High Performance Computing, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore
| | - Zheng Liu
- grid.59025.3b0000 0001 2224 0361School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore ,grid.59025.3b0000 0001 2224 0361CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore, Singapore ,grid.4280.e0000 0001 2180 6431Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - Fucai Liu
- grid.54549.390000 0004 0369 4060School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China ,grid.54549.390000 0004 0369 4060Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China
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9
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Sindhu AS, Shinde NB, Harish S, Navaneethan M, Eswaran SK. Recoverable and reusable visible-light photocatalytic performance of CVD grown atomically thin MoS 2 films. CHEMOSPHERE 2022; 287:132347. [PMID: 34582929 DOI: 10.1016/j.chemosphere.2021.132347] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Revised: 09/07/2021] [Accepted: 09/22/2021] [Indexed: 05/14/2023]
Abstract
The decomposition of water pollutants including industrial dyes and chemicals via photocatalytic decontamination is one of the major investigated problems in recent years. Two-dimensional molybdenum disulfide (MoS2) layers have shown great promise as an efficient visible-light photocatalyst owing to its numerous active sites and large surface area. In this study, atomically thin MoS2 films of different thicknesses from monolayer to five-layer and ten layers were fabricated on sapphire substrates using chemical vapor deposition (CVD). We demonstrate that these MoS2 thin films can be used as a photocatalyst to degrade Methylene Blue (MB) dye and can be recovered completely with utmost structural and chemical stability. Under visible-light irradiation, the MB absorption peak completely disappears with ∼95.6% of degradation after 120 min. We also demonstrate the reusability of the MoS2 thin films without significantly losing the photocatalytic activity even after 5-cycles of degradation studies. The chemical and structural stability of the MoS2 films after 5-cycles of degradation studies were affirmed using various spectroscopic studies. Our findings suggest that the MB degradation efficiency increases from 19.01% to 98.46% with an increase in pH from 4 to 14. Our approach may facilitate a further design of other transition metal dichalcogenides-based recoverable photocatalysts for industrial applications.
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Affiliation(s)
- Abhishek Singh Sindhu
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India
| | - Nitin Babu Shinde
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India
| | - S Harish
- Functional Materials and Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India
| | - M Navaneethan
- Functional Materials and Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India; Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India
| | - Senthil Kumar Eswaran
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India; Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Kattankulathur, 603203, Chennai, India.
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10
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Bourgès C, Rajamathi R, Nethravathi C, Rajamathi M, Mori T. Induced 2H-Phase Formation and Low Thermal Conductivity by Reactive Spark Plasma Sintering of 1T-Phase Pristine and Co-Doped MoS 2 Nanosheets. ACS OMEGA 2021; 6:32783-32790. [PMID: 34901627 PMCID: PMC8655900 DOI: 10.1021/acsomega.1c04646] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2021] [Accepted: 11/15/2021] [Indexed: 06/14/2023]
Abstract
Pristine and Co-doped MoS2 nanosheets, containing a dominant 1T phase, have been densified by spark plasma sintering (SPS) to produce a nanostructured arrangement. The structural analysis by X-ray powder diffraction revealed that the reactive sintering process transforms the 1T-MoS2 nanosheets into their stable 2H form despite a significantly reduced sintering temperature and time testifying to the fast kinetics of phase change. Together with the phase conversion, the SPS process promoted a strong texturing of the nanosheets, which drives additional scattering processes and alters the electronic and thermal transport properties. In the pristine sample, it produced one of the lowest thermal conductivities ever reported on MoS2 with a minimal value of 0.66 W/m·K at room temperature. The effect of Co substitution in the final sintered samples is not significant, compared to the pristine MoS2 sample, except for a non-negligible improvement of the electrical conductivity by a factor of 100 in the high-Co content (6% by mass) sample.
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Affiliation(s)
- Cédric Bourgès
- WPI
International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan
| | - Ralph Rajamathi
- Materials
Research Group, Department of Chemistry, St. Joseph’s College, 36 Lalbagh Road, Bangalore 560027, India
| | - C. Nethravathi
- Materials
Research Group, Department of Chemistry, St. Joseph’s College, 36 Lalbagh Road, Bangalore 560027, India
- Department
of Chemistry, Mount Carmel College, 58 Vasanthnagar, Bangalore 560052, India
| | - Michael Rajamathi
- Materials
Research Group, Department of Chemistry, St. Joseph’s College, 36 Lalbagh Road, Bangalore 560027, India
| | - Takao Mori
- WPI
International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan
- Graduate
School of Pure and Applied Sciences, University
of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
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11
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Samanian M, Ghatee MH. Study of the molybdenum dichalcogenide crystals: recent developments and novelty of the P-MoS 2 structure. J Mol Model 2021; 27:268. [PMID: 34455502 DOI: 10.1007/s00894-021-04871-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2021] [Accepted: 08/04/2021] [Indexed: 11/29/2022]
Abstract
Nontoxicity and economic production have turned some of the molybdenum disulfide (MoS2) polytypes into very interesting thermoelectric materials. Therefore, these materials with privileged applications have urged theoretical and experimental investigation for understanding and development of new crystals for particular applications. We present the results of computational-theoretical studies on the structural, vibrational thermoelectric, and thermodynamic properties of five crystal structures, known and newly developed, of MoS2 based on first-principles density functional theory (DFT). While all crystals of MoS2 were explored by undertaking several methods, the DFT method corrected for dispersion interaction (DFT-D2) confirmed the production of the cell parameters closer to the experimental. The variation of the bandgap and density of states (DOS) in all structures represents crystals comprising both semiconductors (2H- and 3R-MoS2 crystals) and metals (1T-, P-MoS2, and FCC-MoS2). According to spectroscopic studies, two typical [Formula: see text] and [Formula: see text] Raman peaks are indicators of in-plane and out-of-plane vibrational modes of S atoms. From the two newly reported crystals (P-MoS2 and FCC-MoS2), P-MoS2 exhibits exclusive thermoelectric properties (within 300-1000 K) such as high electrical conductivity, Seebeck coefficient, and low thermal conductivity. The thickness dependence of thermoelectric properties in 1T-, 2H-, and 3R-MoS2 crystals is substantiated. A low thermal conductivity at room temperature along with an extremely high power factor at 1000 K exhibited by P-MoS2 suggests P-MoS2 crystal as a potential thermoelectric material. Finally, the present computations can introduce P-MoS2 crystal as a new thermoelectric material with unique and extraordinary properties.
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Affiliation(s)
- Maryam Samanian
- Department of Chemistry, Shiraz University, 71946, Shiraz, Iran
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12
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Guo S, Deng J, Zhou J, Yu Y, Bu Y, Zhu T, Ren X, Li Z, Lu W, Chen X. Combined role of polarization matching and critical coupling in enhanced absorption of 2D materials based on metamaterials. OPTICS EXPRESS 2021; 29:9269-9282. [PMID: 33820359 DOI: 10.1364/oe.419028] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Accepted: 03/02/2021] [Indexed: 06/12/2023]
Abstract
Since 2D materials are typically much more efficient to absorb in-plane polarized light than out-of-plane polarized light, keeping the light polarization in-plane at the 2D material is revealed to be a crucial factor other than critical coupling in light absorption enhancement in a 2D material integrated with a light coupling structure. When the composite of a metal-insulator-metal structure and a 2D material changes from the magnetic resonator form to the metasurface Salisbury screen one, the field polarization at the 2D material changes from a mainly out-of-plane status to a mainly in-plane status. As a result, for graphene, the absorptance enhancement is increased by 1.6 to 4.2 times, the bandwidth enlarged by 3.6 to 6.4 times, and the metal loss suppressed by 7.4 to 24 times in the mid- to far-infrared range, leading to the absorptance of graphene approaching 90% in the mid-infrared regime and 100% in the THz regime. For monolayer black phosphorus, the absorptance enhancement at the wavelength of 3.5 µm is increased by 5.4 times, and the bandwidth enlarged by 1.8 times. For monolayer MoS2, the averaged absorptance in the visible-near infrared range is enhanced by 4.4 times from 15.5% to 68.1%.
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13
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Abstract
Layered MoS2 is considered as one of the most promising two-dimensional photocatalytic materials for hydrogen evolution and water splitting; however, the electronic structure at the MoS2-liquid interface is so far insufficiently resolved. Measuring and understanding the band offset at the surfaces of MoS2 are crucial for understanding catalytic reactions and to achieve further improvements in performance. Herein, the heterogeneous charge transfer behavior of MoS2 flakes of various layer numbers and sizes is addressed with high spatial resolution in organic solutions using the ferrocene/ferrocenium (Fc/Fc+) redox pair as a probe in near-field scanning electrochemical microscopy, i.e. in close nm probe-sample proximity. Redox mapping reveals an area and layer dependent reactivity for MoS2 with a detailed insight into the local processes as band offset and confinement of the faradaic current obtained. In combination with additional characterization methods, we deduce a band alignment occurring at the liquid-solid interface. Here, high-resolution atomic force microscopy and scanning electrochemical microscopy are used to investigate the electron transfer behaviour of layered MoS2 flakes in organic solutions, offering insights on the electronic band alignment at the solid-liquid interface.
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14
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Chua R, Yang J, He X, Yu X, Yu W, Bussolotti F, Wong PKJ, Loh KP, Breese MBH, Goh KEJ, Huang YL, Wee ATS. Can Reconstructed Se-Deficient Line Defects in Monolayer VSe 2 Induce Magnetism? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000693. [PMID: 32383232 DOI: 10.1002/adma.202000693] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2020] [Revised: 04/02/2020] [Accepted: 04/13/2020] [Indexed: 06/11/2023]
Abstract
There have been several recent conflicting reports on the ferromagnetism of clean monolayer VSe2 . Herein, the controllable formation of 1D defect line patterns in vanadium diselenide (VSe2 ) monolayers initiated by thermal annealing is presented. Using scanning tunneling microscopy and q-plus atomic force microscopy techniques, the 1D line features are determined to be 8-member-ring arrays, formed via a Se deficient reconstruction process. The reconstructed VSe2 monolayer with Se-deficient line defects displays room-temperature ferromagnetism under X-ray magnetic circular dichroism and magnetic force microscopy, consistent with the density functional theory calculations. This study possibly resolves the controversy on whether ferromagnetism is intrinsic in monolayer VSe2 , and highlights the importance of controlling and understanding the atomic structures of surface defects in 2D crystals, which could play key roles in the material properties and hence potential device applications.
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Affiliation(s)
- Rebekah Chua
- NUS Graduate School for Integrative Sciences & Engineering (NGS), University Hall, Tan Chin Tuan Wing, 21 Lower Kent Ridge, Singapore, 119077, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Jing Yang
- Institute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Singapore
| | - Xiaoyue He
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Wei Yu
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Ping Kwan Johnny Wong
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore, 117546, Singapore
| | - Kian Ping Loh
- NUS Graduate School for Integrative Sciences & Engineering (NGS), University Hall, Tan Chin Tuan Wing, 21 Lower Kent Ridge, Singapore, 119077, Singapore
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore, 117546, Singapore
| | - Mark B H Breese
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Kuan Eng Johnson Goh
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
- Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Yu Li Huang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Andrew T S Wee
- NUS Graduate School for Integrative Sciences & Engineering (NGS), University Hall, Tan Chin Tuan Wing, 21 Lower Kent Ridge, Singapore, 119077, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore, 117546, Singapore
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15
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Chen X, Liu C, Mao S. Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors. NANO-MICRO LETTERS 2020; 12:95. [PMID: 34138098 PMCID: PMC7770660 DOI: 10.1007/s40820-020-00438-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2020] [Accepted: 03/23/2020] [Indexed: 05/27/2023]
Abstract
Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) attract significant attention as FET channel due to their unique structures and outstanding properties. With the booming of studies on TMDC FETs, we aim to give a timely review on TMDC-based FET sensors for environmental analysis in different media. First, theoretical basics on TMDC and FET sensor are introduced. Then, recent advances of TMDC FET sensor for pollutant detection in gaseous and aqueous media are, respectively, discussed. At last, future perspectives and challenges in practical application and commercialization are given for TMDC FET sensors. This article provides an overview on TMDC sensors for a wide variety of analytes with an emphasize on the increasing demand of advanced sensing technologies in environmental analysis.
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Affiliation(s)
- Xiaoyan Chen
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, USA
| | - Chengbin Liu
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China
| | - Shun Mao
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China.
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China.
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