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Jaskólski W. Metal-Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1915. [PMID: 38673272 PMCID: PMC11051715 DOI: 10.3390/ma17081915] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 04/12/2024] [Accepted: 04/19/2024] [Indexed: 04/28/2024]
Abstract
We investigated gated multilayer graphene with stacking order changes along the armchair direction. We consider that some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations in the gate voltage, the charge occupying this band oscillates between the outer layers.
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Affiliation(s)
- Włodzimierz Jaskólski
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Grudziądzka 5, 87-100 Toruń, Poland
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2
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Khan K, Zia Ullah Shah M, Aziz U, Hayat K, Sajjad M, Ahmad I, Awais Ahmad S, Karim Shah S, Shah A. Development of 1.6 V Hybrid Supercapacitor Based on ZnO Nanorods/MnO2 nanowires for Next-Generation Electrochemical Energy Storage. J Electroanal Chem (Lausanne) 2022. [DOI: 10.1016/j.jelechem.2022.116753] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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3
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Jaskólski W. Electronic structure of trilayer graphene with internal layer broken. Mol Phys 2021. [DOI: 10.1080/00268976.2021.2013554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
Affiliation(s)
- W. Jaskólski
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Toruń, Poland
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4
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Wang Z, Cheng S, Liu X, Jiang H. Topological kink states in graphene. NANOTECHNOLOGY 2021; 32:402001. [PMID: 34161935 DOI: 10.1088/1361-6528/ac0dd8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Accepted: 06/23/2021] [Indexed: 06/13/2023]
Abstract
Due to the unique band structure, graphene exhibits a number of exotic electronic properties that have not been observed in other materials. Among them, it has been demonstrated that there exist the one-dimensional valley-polarized topological kink states localized in the vicinity of the domain wall of graphene systems, where a bulk energy gap opens due to the inversion symmetry breaking. Notably, the valley-momentum locking nature makes the topological kink states attractive to the property manipulation in valleytronics. This paper systematically reviews both the theoretical research and experimental progress on topological kink states in monolayer graphene, bilayer graphene and graphene-like classical wave systems. Besides, various applications of topological kink states, including the valley filter, current partition, current manipulation, Majorana zero modes and etc, are also introduced.
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Affiliation(s)
- Zibo Wang
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, People's Republic of China
- Center for Computational Sciences, Sichuan Normal University, Chengdu 610068, People's Republic of China
| | - Shuguang Cheng
- Department of Physics, Northwest University, Xi'an 710069, People's Republic of China
| | - Xiao Liu
- School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China
| | - Hua Jiang
- School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China
- Institute for Advanced Study of Soochow University, Suzhou 215006, People's Republic of China
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5
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Brey L, Stauber T, Slipchenko T, Martín-Moreno L. Plasmonic Dirac Cone in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2020; 125:256804. [PMID: 33416378 DOI: 10.1103/physrevlett.125.256804] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2020] [Accepted: 11/16/2020] [Indexed: 06/12/2023]
Abstract
We discuss plasmons of biased twisted bilayer graphene when the Fermi level lies inside the gap. The collective excitations are a network of chiral edge plasmons (CEP) entirely composed of excitations in the topological electronic edge states that appear at the AB-BA interfaces. The CEP form a hexagonal network with a unique energy scale ε_{p}=(e^{2})/(ε_{0}εt_{0}) with t_{0} the moiré lattice constant and ε the dielectric constant. From the dielectric matrix we obtain the plasmon spectra that has two main characteristics: (i) a diverging density of states at zero energy, and (ii) the presence of a plasmonic Dirac cone at ℏω∼ε_{p}/2 with sound velocity v_{D}=0.0075c, which is formed by zigzag and armchair current oscillations. A network model reveals that the antisymmetry of the plasmon bands implies that CEP scatter at the hexagon vertices maximally in the deflected chiral outgoing directions, with a current ratio of 4/9 into each of the deflected directions and 1/9 into the forward one. We show that scanning near-field microscopy should be able to observe the predicted plasmonic Dirac cone and its broken symmetry phases.
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Affiliation(s)
- Luis Brey
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
| | - T Stauber
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
| | - T Slipchenko
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza 50009, Spain and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, Zaragoza 50009, Spain
| | - L Martín-Moreno
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza 50009, Spain and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, Zaragoza 50009, Spain
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Kastorp CFP, Duncan DA, Scheffler M, Thrower JD, Jørgensen AL, Hussain H, Lee TL, Hornekær L, Balog R. Growth and electronic properties of bi- and trilayer graphene on Ir(111). NANOSCALE 2020; 12:19776-19786. [PMID: 32966486 DOI: 10.1039/d0nr04788k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interesting electronic properties arise in vertically stacked graphene sheets, some of which can be controlled by mutual orientation of the adjacent layers. In this study, we investigate the MBE grown multilayer graphene on Ir(111) by means of STM, LEED and XPS and we examine the influence of the substrate on the geometric and electronic properties of bilayer graphene by employing XSW and ARPES measurements. We find that the MBE method does not limit the growth to two graphene layers and that the wrinkles, which arise through extended carbon deposition, play a crucial role in the multilayer growth. We also find that the bilayer and trilayer graphene sheets have graphitic-like properties in terms of the separation between the two layers and their stacking. The presence of the iridium substrate imposes a periodic potential induced by the moiré pattern that was found to lead to the formation of replica bands and minigaps in bilayer graphene. From tight-binding fits to our ARPES data we find that band renormalization takes place in multilayer graphene due to a weaker coupling of the upper-most graphene layer to the iridium substrate.
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Affiliation(s)
- Claus F P Kastorp
- Department of Physics and Astronomy, Aarhus University, Aarhus, Denmark.
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7
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Nguyen VH, Charlier JC. Aharonov-Bohm interferences in polycrystalline graphene. NANOSCALE ADVANCES 2020; 2:256-263. [PMID: 36133971 PMCID: PMC9419533 DOI: 10.1039/c9na00542k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2019] [Accepted: 11/13/2019] [Indexed: 06/14/2023]
Abstract
Aharonov-Bohm (AB) interferences in the quantum Hall regime can be achieved, provided that electrons are able to transmit between two edge channels in nanostructures. Pioneering approaches include quantum point contacts in 2DEG systems, bipolar graphene p-n junctions, and magnetic field heterostructures. In this work, defect scattering is proposed as an alternative mechanism to achieve AB interferences in polycrystalline graphene. Indeed, due to such scattering, the extended defects across the sample can act as tunneling paths connecting quantum Hall edge channels. Consequently, strong AB oscillations in the conductance are predicted in polycrystalline graphene systems with two parallel grain boundaries. In addition, this general approach is demonstrated to be applicable to nano-systems containing two graphene barriers with functional impurities and perspectively, can also be extended to similar systems of 2D materials beyond graphene.
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Affiliation(s)
- V Hung Nguyen
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain) Chemin des étoiles 8 B-1348 Louvain-la-Neuve Belgium
| | - J-C Charlier
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain) Chemin des étoiles 8 B-1348 Louvain-la-Neuve Belgium
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Jaskólski W, Ayuela A. Spin-layer locked gapless states in gated bilayer graphene. RSC Adv 2019; 9:42140-42144. [PMID: 35542834 PMCID: PMC9076544 DOI: 10.1039/c9ra07319a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2019] [Accepted: 11/21/2019] [Indexed: 12/04/2022] Open
Abstract
Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin-polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as π-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications. Spin-degenerate gapless states with a topological character are spin-polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects.![]()
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Affiliation(s)
- W Jaskólski
- Faculty of Physics, Astronomy and Informatics, Institute of Physics, Nicolaus Copernicus University Grudziadzka 5 87-100 Toruń Poland
| | - A Ayuela
- Donostia International Physics Center (DIPC) Manuel de Lardizabal 4 E-20018 San Sebastián Spain.,Centro de Física de Materiales-MPC CSIC-UPV/EHU Manuel de Lardizabal 5 E-20018 San Sebastián Spain
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Crasto de Lima F, Ferreira GJ, Miwa RH. Layertronic control of topological states in multilayer metal-organic frameworks. J Chem Phys 2019; 150:234701. [DOI: 10.1063/1.5100679] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023] Open
Affiliation(s)
- F. Crasto de Lima
- Instituto de Física, Universidade Federal de Uberlândia, C.P. 593, 38400-902 Uberlândia, MG, Brazil
| | - G. J. Ferreira
- Instituto de Física, Universidade Federal de Uberlândia, C.P. 593, 38400-902 Uberlândia, MG, Brazil
| | - R. H. Miwa
- Instituto de Física, Universidade Federal de Uberlândia, C.P. 593, 38400-902 Uberlândia, MG, Brazil
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10
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Huang BL, Chuu CP, Lin MF. Asymmetry-enriched electronic and optical properties of bilayer graphene. Sci Rep 2019; 9:859. [PMID: 30696876 PMCID: PMC6351665 DOI: 10.1038/s41598-018-37058-9] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2018] [Accepted: 11/29/2018] [Indexed: 12/04/2022] Open
Abstract
The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane axis introduces substantial changes of wavefunctions, such as gapless topological protected states, standing waves with bonding and anti-bonding characteristics, rich structures in density of states and optical spectra. The wavefunctions present well-behaved standing waves in pure system and complicated node structures in geometry-modulated system. The optical absorption spectra show forbidden optical excitation channels, prominent asymmetric absorption peaks, and dramatic variations in absorption structures. These results provide that the geometry-modulated structure with tunable gate voltage could be used for electronic and optical manipulation in future graphene-based devices.
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Affiliation(s)
- Bor-Luen Huang
- Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan.
- Physics Division, National Center for Theoretical Sciences, Hsinchu, 300, Taiwan.
| | - Chih-Piao Chuu
- Physics Division, National Center for Theoretical Sciences, Hsinchu, 300, Taiwan
| | - Ming-Fa Lin
- Hierarchical Green-Energy Materials Research Center, National Cheng Kung University, Tainan, 701, Taiwan
- Quantum Topology Center, National Cheng Kung University, Tainan, 701, Taiwan
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11
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Abdullah HM, Bahlouli H, Peeters FM, Van Duppen B. Confined states in graphene quantum blisters. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:385301. [PMID: 30102244 DOI: 10.1088/1361-648x/aad9c7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Bilayer graphene samples may exhibit regions where the two layers are locally delaminated forming a so-called quantum blister in the graphene sheet. Electron and hole states can be confined in this graphene quantum blisters (GQB) by applying a global electrostatic bias. We scrutinize the electronic properties of these confined states under the variation of interlayer bias, coupling, and blister's size. The spectra display strong anti-crossings due to the coupling of the confined states on upper and lower layers inside the blister. These spectra are layer localized where the respective confined states reside on either layer or equally distributed. For finite angular momentum, this layer localization can be at the edge of the blister and corresponds to degenerate modes of opposite momenta. Furthermore, the energy levels in GQB exhibit electron-hole symmetry that is sensitive to the electrostatic bias. Finally, we demonstrate that confinement in GQB persists even in the presence of a variation in the inter-layer coupling.
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Affiliation(s)
- H M Abdullah
- Department of Physics, King Fahd University of Petroleum and Minerals, 31261 Dhahran, Saudi Arabia. Saudi Center for Theoretical Physics, PO Box 32741, Jeddah 21438, Saudi Arabia. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
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12
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Crasto de Lima F, Ferreira GJ, Miwa RH. Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, doping and interfacing graphene. Phys Chem Chem Phys 2018; 20:22652-22659. [DOI: 10.1039/c8cp03792b] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Charge transfer between metal–organic Kagome lattices interfaced with graphene provides a tunable quantum anomalous Hall effect.
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Affiliation(s)
- F. Crasto de Lima
- Instituto de Física
- Universidade Federal de Uberlândia
- Uberlândia
- Brazil
| | | | - R. H. Miwa
- Instituto de Física
- Universidade Federal de Uberlândia
- Uberlândia
- Brazil
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13
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Berdakin M, Barrios Vargas JE, Foa Torres LEF. Directional control of charge and valley currents in a graphene-based device. Phys Chem Chem Phys 2018; 20:28720-28725. [DOI: 10.1039/c8cp04878a] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We propose a directional switching effect in a metallic device.
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Affiliation(s)
- M. Berdakin
- Departamento de Física
- Facultad de Ciencias Físicas y Matemáticas
- Universidad de Chile
- Santiago
- Chile
| | - J. E. Barrios Vargas
- Departamento de Física
- Facultad de Ciencias Físicas y Matemáticas
- Universidad de Chile
- Santiago
- Chile
| | - L. E. F. Foa Torres
- Departamento de Física
- Facultad de Ciencias Físicas y Matemáticas
- Universidad de Chile
- Santiago
- Chile
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