1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Intensity noise reduction in quantum dot comb laser by lower external carrier fluctuations

This work investigates the impact of carrier noise induced by an external current source on the linewidth enhancement factor (LEF) and relative intensity noise (RIN) of a 100 GHz quantum dot fourth-order colliding-pulse mode-locked laser (MLL), driven by a normal pump with Gaussian-distributed carrier sequences and a quiet pump with sub-Poissonian-distributed carrier sequences. The results indicate that under a normal pump, the LEFs are approximately zero for reverse saturable absorber (SA) bias voltages ranging from 0 to 2.5 V, and the laser achieves a RIN as low as -156 dB/Hz. When using a quiet pump, both the LEF and RIN are reduced across all SA bias conditions, particularly at low reverse SA bias voltages. Specifically, the LEF decreases by up to 0.58 at 0 V, and the average RIN spectrum is reduced by more than 3 dB at the same voltage. This work provides a straightforward approach for the development and optimization of multi-channel light sources for dense wavelength division multiplexing (DWDM) technologies with low optical noise.

Broadband quantum-dot frequency-modulated comb laser

Frequency-modulated (FM) laser combs, which offer a quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion, Kerr nonlinearity, and four-wave mixing (FWM). While FM combs have been widely observed in quantum cascade Fabry-Perot (FP) lasers, the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the material. Here we report a 60 GHz quantum-dot (QD) mode-locked laser in which both the amplitude-modulated (AM) and the FM comb can be generated independently. The high FWM efficiency of -5 dB allows the QD laser to generate FM comb efficiently. We also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD engineering. The maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 THz. This study gives novel insights into the improvement of FM combs and paves the way for small-footprint, electrically pumped, and energy-efficient frequency combs for silicon photonic integrated circuits (PICs).

Self-mode-locking in a high-power hybrid silicon nitride integrated laser

Integrated mode-locked lasers are useful tools in microwave photonic applications as a local oscillator. In particular, hybrid integrated lasers could easily be integrated with passive processing circuits. In this Letter, we report on the self-mode-locking of a hybrid integrated laser comprising two indium phosphide gain sections and a silicon nitride feedback circuit that filters light using two ring resonators. The hybrid laser is shown to mode-lock and to have a mostly frequency-modulated field in the cavity using a stepped-heterodyne optical complex spectrum analysis. A mostly frequency modulated field output is good for high powers per line due to a more continuous emission, compared with mode-locked lasers using a saturable absorber; additionally, the filter limits the bandwidth of the comb, condensing the power to the fewer comb lines.

Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon

Direct epitaxy of InP quantum dot (QD) lasers on silicon (Si) provides an on-chip red laser source for integrated Si photonics with different applications. Here, we demonstrate the first, to the best of our knowledge, InP QD lasers directly grown on (001) Si. Combining highly emissive InP QDs and a GaAs/Si template with low defect density, continuous-wave (CW) lasing of micro-disk lasers (MDLs) on Si is achieved at room temperature. The lowest threshold of MDLs on Si is ∼500nW, without considering the micro-disk surface absorption efficiency of the pump power. The MDLs grown on the native GaAs substrate with the same growth and fabrication process are compared using statistical data analysis. Similar material characterization results and device performances on these two substrates further confirm the performance of QD lasers on Si. This demonstration paves the way for future realization of integrated photonic circuits with red and near-infrared (NIR) lasers on Si.

InAs/GaAs quantum dot single-section mode-locked lasers on Si (001) with optical self-injection feedback

Silicon based InAs quantum dot mode locked lasers (QD-MLLs) are promising to be integrated with silicon photonic integrated circuits (PICs) for optical time division multiplexing (OTDM), wavelength division multiplexing (WDM) and optical clocks. Single section QD-MLL can provide high-frequency optical pulses with low power consumption and low-cost production possibilities. However, the linewidths of the QD-MLLs are larger than quantum well lasers, which generally introduce additional phase noise during optical transmission. Here, we demonstrated a single section MLL monolithically grown on Si (001) substrate with a repetition rate of 23.5 GHz. The 3-dB Radio Frequency (RF) linewidth of the QD-MLL was stabilized at optimized injection current under free running mode. By introducing self-injection feedback locking at a feedback strength of -24dB, the RF linewidth of MLL was significantly narrowed by two orders of magnitude from 900kHz to 8kHz.