Contact resistance and mobility in back-gate graphene transistors

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V-1 s-1 and a memory window up to 1.3 μA. Exposure to a supercontinuum white light source reveals that negative photoconductivity (NPC) and positive photoconductivity (PPC) coexist in the same device. Such behavior is attributed to the chemisorbed O2 molecules, with a minor role of physisorbed H2O molecules. The coexistence of NPC and PPC can be exploited in neuromorphic vision sensors, requiring the human eye retina to process the optical signals through alerting and protection (NPC), adaptation (PPC), followed by imaging and processing. Our results open new avenues for the use of BP and other two-dimentional (2D) semiconducting materials in transistors, memories, and neuromorphic vision sensors for advanced applications in robotics, self-driving cars, etc.

Seeded growth of single-crystal black phosphorus nanoribbons

Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2

The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS2-based FETs with Cr-Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr-Au/ReS2 interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing. Through time-resolved photocurrent measurements, we show that the photocurrent increases with temperature and exhibits a linear dependence on the incident light power at both low and room temperatures and a longer rise/decay time at higher temperatures. We surmise that the photocurrent is affected by the photobolometric effect and light-induced desorption of adsorbates which are facilitated by the high temperature and the low pressure.

Machine Learning Attacks-Resistant Security by Mixed-Assembled Layers-Inserted Graphene Physically Unclonable Function

Mixed layers of octadecyltrichlorosilane (ODTS) and 1H,1H,2H,2H-perfluorooctyltriethoxysilane (FOTS) on an active layer of graphene are used to induce a disordered doping state and form a robust defense system against machine-learning attacks (ML attacks). The resulting security key is formed from a 12 × 12 array of currents produced at a low voltage of 100 mV. The uniformity and inter-Hamming distance (HD) of the security key are 50.0 ± 12.3% and 45.5 ± 16.7%, respectively, indicating higher security performance than other graphene-based security keys. Raman spectroscopy confirmed the uniqueness of the 10,000 points, with the degree of shift of the G peak distinguishing the number of carriers. The resulting defense system has a 10.33% ML attack accuracy, while a FOTS-inserted graphene device is easily predictable with a 44.81% ML attack accuracy.

Nanometer Sized Direct Laser-Induced Gold Printing for Precise 2D-Electronic Device Fabrication

Flexible electronics manufacturing technologies are essential and highly favored for future integrated photonic and electronic devices. Direct laser induced writing (DIW) of metals has shown potential as a fast and highly variable method in adaptable electronics. However, most of the DIW procedures use silver structures, which tend to oxidize and are limited to the micrometer regime. Here, a DIW technique is introduced that not only enables electrical gold wiring of 2D van-der-Waals materials with sub-µm structures and 100 nm interspacing resolution but is also capable of fabricating photo switches and field effect transistors on various rigid and elastic materials. Light sensitive metalloid Au₃₂ -nanoclusters serve as the ink that allows for low-power cw-laser exposure without further post-treatment. With a simple lift-off procedure, the unexposed ink can be removed. The technique realizes ultrafast, high resolution, and high precision production of integrated electronics and may pave the way for personalized circuits even printed on curved surfaces.

Controllable Oxidation of ZrS2 to Prepare High-κ, Single-Crystal m-ZrO2 for 2D Electronics

High-κ materials that exhibit large permittivity and band gaps are needed as gate dielectrics to enhance capacitance and prevent leakage current in downsized technology nodes. Among these, monoclinic ZrO₂ (m-ZrO₂ ) shows good potential because of its inertness and high-κ with respect to SiO₂ , but a method to produce ultrathin single crystal is lacking. Here, the controllable preparation of ultrathin m-ZrO₂ single crystals via the in situ thermal oxidation of ZrS₂ is achieved. As-grown m-ZrO₂ presents an equivalent oxide thickness of ≈0.29 nm, a high dielectric constant of ≈19, and a breakdown voltage (E_BD ) of ≈7.22 MV cm^-1 . MoS₂ field effect transistor (FET) by using m-ZrO₂ as a dielectric layer shows comparable mobility to that using SiO₂ dielectric. The ultraclean interface of m-ZrO₂ /MoS₂ and high crystalline quality of m-ZrO₂ lead to negligible hysteresis in transfer curves. Single crystal m-ZrO₂ dielectric shows potential application in digital complementary metal oxidesemiconductor (CMOS) logic FET.

Nanoelectromechanical Temperature Sensor Based on Piezoresistive Properties of Suspended Graphene Film

The substrate impurities scattering will lead to unstable temperature-sensitive behavior and poor linearity in graphene temperature sensors. And this can be weakened by suspending the graphene structure. Herein, we report a graphene temperature sensing structure, with suspended graphene membranes fabricated on the cavity and non-cavity SiO₂/Si substrate, using monolayer, few-layer, and multilayer graphene. The results show that the sensor provides direct electrical readout from temperature to resistance transduction by the nano piezoresistive effect in graphene. And the cavity structure can weaken the substrate impurity scattering and thermal resistance effect, which results in better sensitivity and wide-range temperature sensing. In addition, monolayer graphene is almost no temperature sensitivity. And the few-layer graphene temperature sensitivity, lower than that of the multilayer graphene cavity structure (3.50%/°C), is 1.07%/°C. This work demonstrates that piezoresistive in suspended graphene membranes can effectively enhance the sensitivity and widen the temperature sensor range in NEMS temperature sensors.

Single-Electron Transport and Detection of Graphene Quantum Dots

The integrated structure of graphene single-electron transistor and nanostrip electrometer was prepared using the semiconductor fabrication process. Through the electrical performance test of the large sample number, qualified devices were selected from low-yield samples, which exhibited an obvious Coulomb blockade effect. The results show that the device can deplete the electrons in the quantum dot structure at low temperatures, thus, accurately controlling the number of electrons captured by the quantum dot. At the same time, the nanostrip electrometer coupled with the quantum dot can be used to detect the quantum dot signal, that is, the change in the number of electrons in the quantum dot, because of its quantized conductivity characteristics.

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided.

Strontium-deficient SrxCoO2-CoO2 nanotubes as a high ampacity and high conductivity material

Continuous miniaturization of electronics demands the development of interconnectors with high ampacity and high conductivity, which conventional conductors such as copper and gold cannot offer. Here we report the synthesis of Sr-deficient misfit Sr_xCoO₂-CoO₂ nanotubes by a novel crystal conversion method and investigate their electrical properties. Bulk Sr₆Co₅O₁₅ having a quasi-one-dimensional CoO₆ polyhedral structure (face-sharing octahedron and trigonal prismatic CoO₆ arranged in one-dimension) is converted to Sr_xCoO₂-CoO₂ nanotubes where CoO₂ adopts a two-dimensional edge-sharing CoO₂ layered structure in a basic hydrothermal process. Electrical properties measured on individual nanotubes demonstrate that these nanotubes are semiconducting with a conductivity of 1.28 × 10⁴ S cm^-1 and an ampacity of 10⁹ A cm^-2, which is the highest reported ampacity value to date of any inorganic oxide-based material. The nanotubes also show a breakdown power per unit channel length (P/L) of ∼38.3 W cm^-1, the highest among the regularly used interconnect materials. The above results demonstrate that Sr_xCoO₂-CoO₂ nanotubes are potential building blocks for high-power electronic applications.

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe₂. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe₂ nanosheet. We show that the optoelectronic performance of these FETs is strongly affected by air pressure, and it undergoes a dramatic increase in conductivity when the pressure is lowered below the atmospheric one. Surface-adsorbed oxygen and water molecules are very effective in doping ReSe₂; hence, FETs based on this two-dimensional (2D) semiconductor can be used as an effective air pressure gauge. Finally, we report negative photoconductivity in the ReSe₂ channel that we attribute to a back-gate-dependent trapping of the photo-excited charges.

Glassy Carbon Electrode Modified with N-Doped Reduced Graphene Oxide Sheets as an Effective Electrochemical Sensor for Amaranth Detection

Amaranth is one of the synthetic azo colorants used to improve the appearance and to increase the appeal of some foods and soft drinks. The excessive consumption of amaranth can be associated with health side effects, emphasizing the need to monitor this food dye. Accordingly, the present study aimed to introduce an electrochemical sensor of glassy carbon electrode (GCE) modified with N-doped reduced graphene oxide (N-rGO), N-rGO/GCE, to detect the amaranth sensitively and rapidly. Several electrochemical techniques such as differential pulse voltammetry (DPV), linear sweep voltammetry (LSV), chronoamperometry (CHA), and cyclic voltammetry (CV) are exploited for the evaluation of the efficiency of the developed electrode for the detection of amaranth. We found that N-rGO/GCE enhanced amaranth oxidation, thus significantly elevating the current signal. Amaranth showed that calibration curves ranged from 0.1 to 600.0 µM, and the limit of detection (LOD) (S/N = 3) was 0.03 μM. Finally, the developed sensor was effectively applied for real samples (tap water, apple juice, and orange juice) with acceptable recovery values from 96.0 to 104.3%.

Graphene-Silicon Device for Visible and Infrared Photodetection

The fabrication of a graphene-silicon (Gr-Si) junction involves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by Si3N4, produces a Gr-Si device, in which the parallel MIS consists of a Gr-Si3N4-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 104. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height (SBH) at zero bias, φb0 = 0.24 eV, the effective Richardson's constant, A* = 7 × 10-10 AK-2 cm-2, and the diode ideality factor n = 2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity of up to 350 mA/W and an external quantum efficiency (EQE) of up to 75% are achieved in the 500-1200 nm wavelength range. Decreases in responsivity to 0.4 mA/W and EQE to 0.03% are observed above 1200 nm, which is in the IR region beyond the silicon optical band gap, in which photoexcitation is driven by graphene. Finally, a model based on two parallel and opposite diodes, one for the Gr-Si junction and the other for the Gr-Si3N4-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.

Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is crucial for the design and optimization of radio-frequency applications based on multiple GFETs. However, the previous analysis of such dependence carried out for single devices is uncomplete and if not properly understood could result in circuit designs with poor performance. The control of the Dirac point shift (DPS) is particularly important for the deployment of graphene-based differential circuit topologies where keeping a strict symmetry between the electrically balanced branches is essential for exploiting the advantages of such topologies. This note sheds light on the impact of terminal biases on the DPS in a real device and sets a rigorous methodology to control it so to eventually optimize and exploit the performance of radio-frequency applications based on GFETs.

Thickness-modulated lateral MoS2 diodes with sub-terahertz cutoff frequency

Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency (fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate an on-off current ratio of more than 600 and a short circuit current responsivity at zero-bias of 7 A/W. The excellent performance achieved in our device is attributed to reduced contact resistance from using In/Au contacts and low junction capacitance due to the lateral device structure. In addition, the use of multilayer MoS2 crystals enabled relatively high current flow. Small- and large-signal models are extracted from DC and RF characterisation of the fabricated diode prototype. Extracted compact models are compared to the measured DC and S-parameters of the diode, demonstrating excellent matching between models and measurements. The presented diode is suitable for switching circuits and high frequency applications.

Influence of the Thermomechanical Characteristics of Low-Density Polyethylene Substrates on the Thermoresistive Properties of Graphite Nanoplatelet Coatings

Morphological, structural, and thermoresistive properties of films deposited on low-density polyethylene (LDPE) substrates are investigated for possible application in flexible electronics. Scanning and transmission electron microscopy analyses, and X-ray diffraction measurements show that the films consist of overlapped graphite nanoplatelets (GNP) each composed on average of 41 graphene layers. Differential scanning calorimetry and dynamic-mechanical-thermal analysis indicate that irreversible phase transitions and large variations of mechanical parameters in the polymer substrates can be avoided by limiting the temperature variations between −40 and 40 °C. Electrical measurements performed in such temperature range reveal that the resistance of GNP films on LDPE substrates increases as a function of the temperature, unlike the behavior of graphite-based materials in which the temperature coefficient of resistance is negative. The explanation is given by the strong influence of the thermal expansion properties of the LDPE substrates on the thermo-resistive features of GNP coating films. The results show that, narrowing the temperature range from 20 to 40 °C, the GNP on LDPE samples can work as temperature sensors having linear temperature-resistance relationship, while keeping constant the temperature and applying mechanical strains in the 0–4.2 × 10−3 range, they can operate as strain gauges with a gauge factor of about 48.

Electron irradiation of multilayer [Formula: see text] field effect transistors

Palladium diselenide ([Formula: see text]) is a recently isolated layered material that has attracted a lot of interest for its pentagonal structure, air stability and electrical properties that are largely tunable by the number of layers. In this work, multilayer [Formula: see text] is used as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain [Formula: see text] electrodes enable contacts with resistance below [Formula: see text]. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by [Formula: see text] electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as [Formula: see text] dramatically changes the transistor behavior, demonstrating a high sensitivity of [Formula: see text] to electron irradiation. The sensitivity is lost after a few exposures, with a saturation condition being reached for fluence higher than [Formula: see text]. The damage induced by high electron fluence is irreversible as the device persists in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the [Formula: see text] interface.

Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. The electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. It is demonstrated that irradiation lowers the Schottky barrier at the contacts because of thermally induced atom diffusion and interfacial reactions. The simulation of electron paths in the device reveals that most of the beam energy is absorbed in the metal contacts. The study demonstrates that electron beam irradiation can be effectively used for contact improvement through local annealing.

Field Emission Properties of Polymer Graphite Tips Prepared by Membrane Electrochemical Etching

This paper investigates field emission behavior from the surface of a tip that was prepared from polymer graphite nanocomposites subjected to electrochemical etching. The essence of the tip preparation is to create a membrane of etchant over an electrode metal ring. The graphite rod acts here as an anode and immerses into the membrane filled with alkali etchant. After the etching process, the tip is cleaned and analyzed by Raman spectroscopy, investigating the chemical composition of the tip. The topography information is obtained using the Scanning Electron Microscopy and by Field Emission Microscopy. The evaluation and characterization of field emission behavior is performed at ultra-high vacuum conditions using the Field Emission Microscopy where both the field electron emission pattern projected on the screen and current–voltage characteristics are recorded. The latter is an essential tool that is used both for the imaging of the tip surfaces by electrons that are emitted toward the screen, as well as a tool for measuring current–voltage characteristics that are the input to test field emission orthodoxy.

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